CN105659166B - 用于基于网的处理的无掩模平版印刷 - Google Patents

用于基于网的处理的无掩模平版印刷 Download PDF

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Publication number
CN105659166B
CN105659166B CN201480058382.1A CN201480058382A CN105659166B CN 105659166 B CN105659166 B CN 105659166B CN 201480058382 A CN201480058382 A CN 201480058382A CN 105659166 B CN105659166 B CN 105659166B
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CN
China
Prior art keywords
substrate
roller
twist
processing
distortion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201480058382.1A
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English (en)
Chinese (zh)
Other versions
CN105659166A (zh
Inventor
克里斯多佛·本彻
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Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN201710069376.1A priority Critical patent/CN106896647B/zh
Publication of CN105659166A publication Critical patent/CN105659166A/zh
Application granted granted Critical
Publication of CN105659166B publication Critical patent/CN105659166B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Inking, Control Or Cleaning Of Printing Machines (AREA)
CN201480058382.1A 2013-10-22 2014-09-25 用于基于网的处理的无掩模平版印刷 Expired - Fee Related CN105659166B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710069376.1A CN106896647B (zh) 2013-10-22 2014-09-25 用于基于网的处理的无掩模平版印刷

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361894328P 2013-10-22 2013-10-22
US61/894,328 2013-10-22
PCT/US2014/057348 WO2015060983A1 (en) 2013-10-22 2014-09-25 Maskless lithography for web based processing

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201710069376.1A Division CN106896647B (zh) 2013-10-22 2014-09-25 用于基于网的处理的无掩模平版印刷

Publications (2)

Publication Number Publication Date
CN105659166A CN105659166A (zh) 2016-06-08
CN105659166B true CN105659166B (zh) 2019-01-29

Family

ID=52993357

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201480058382.1A Expired - Fee Related CN105659166B (zh) 2013-10-22 2014-09-25 用于基于网的处理的无掩模平版印刷
CN201710069376.1A Expired - Fee Related CN106896647B (zh) 2013-10-22 2014-09-25 用于基于网的处理的无掩模平版印刷

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201710069376.1A Expired - Fee Related CN106896647B (zh) 2013-10-22 2014-09-25 用于基于网的处理的无掩模平版印刷

Country Status (7)

Country Link
US (1) US10073350B2 (enExample)
EP (1) EP3060961A4 (enExample)
JP (1) JP2016535299A (enExample)
KR (1) KR20160077116A (enExample)
CN (2) CN105659166B (enExample)
TW (1) TWI659269B (enExample)
WO (1) WO2015060983A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI753865B (zh) * 2015-11-03 2022-02-01 以色列商奧寶科技有限公司 用於高解析度電子圖案化的無針跡直接成像
CA2924160A1 (en) * 2016-03-18 2017-09-18 Chaji, Reza Maskless patterning
JP6832170B2 (ja) * 2017-01-20 2021-02-24 旭化成株式会社 可撓性基板の歪量検出方法
US10585360B2 (en) * 2017-08-25 2020-03-10 Applied Materials, Inc. Exposure system alignment and calibration method

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5691541A (en) * 1996-05-14 1997-11-25 The Regents Of The University Of California Maskless, reticle-free, lithography
US6246064B1 (en) * 1997-09-03 2001-06-12 Hitachi, Ltd. Electron beam drawing apparatus
TWI230837B (en) 2002-12-16 2005-04-11 Asml Netherlands Bv Lithographic apparatus with alignment subsystem, device manufacturing method using alignment, and alignment structure
JP2005003799A (ja) 2003-06-10 2005-01-06 Fuji Photo Film Co Ltd 感光性板状部材吸着機構及び画像記録装置
JP4612412B2 (ja) * 2004-08-06 2011-01-12 富士通セミコンダクター株式会社 半導体装置の製造方法
US7102733B2 (en) 2004-08-13 2006-09-05 Asml Holding N.V. System and method to compensate for static and dynamic misalignments and deformations in a maskless lithography tool
JP2006098725A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 描画位置の補正方法と、描画位置を補正可能な描画装置
JP2006098727A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 伸縮状態の検出手段を設けた長尺の可撓性記録媒体と、この可撓性記録媒体に伸縮状態を補正して画像を描画可能な描画方法及び装置
JP2006098719A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 露光装置
JP4491311B2 (ja) * 2004-09-30 2010-06-30 富士フイルム株式会社 画像記録装置及び画像記録方法
KR20060051977A (ko) 2004-09-30 2006-05-19 후지 샤신 필름 가부시기가이샤 묘화 방법 및 장치
JP2006235448A (ja) * 2005-02-28 2006-09-07 Fuji Photo Film Co Ltd 画像記録システム、画像記録方法、プログラムおよび画像形成方法
JP2006349945A (ja) * 2005-06-15 2006-12-28 Fujifilm Holdings Corp 露光装置
US7368207B2 (en) * 2006-03-31 2008-05-06 Eastman Kodak Company Dynamic compensation system for maskless lithography
US20090042139A1 (en) * 2007-04-10 2009-02-12 Nikon Corporation Exposure method and electronic device manufacturing method
JP2010122526A (ja) * 2008-11-20 2010-06-03 Shinko Electric Ind Co Ltd マスクレス露光方法
WO2010075158A1 (en) * 2008-12-23 2010-07-01 3M Innovative Properties Company Roll-to-roll digital photolithography
CN102460633B (zh) * 2009-05-20 2014-12-17 迈普尔平版印刷Ip有限公司 用于光刻系统的图案数据转换器
JP2013045815A (ja) * 2011-08-23 2013-03-04 Nikon Corp 露光方法及びデバイス製造方法
JP5874126B2 (ja) * 2011-08-24 2016-03-02 株式会社ブイ・テクノロジー フィルム露光装置
TWI641915B (zh) * 2012-01-12 2018-11-21 尼康股份有限公司 基板處理裝置、基板處理方法、及圓筒狀光罩

Also Published As

Publication number Publication date
CN105659166A (zh) 2016-06-08
JP2016535299A (ja) 2016-11-10
CN106896647A (zh) 2017-06-27
CN106896647B (zh) 2019-05-10
EP3060961A1 (en) 2016-08-31
US10073350B2 (en) 2018-09-11
EP3060961A4 (en) 2017-06-28
WO2015060983A1 (en) 2015-04-30
TW201531808A (zh) 2015-08-16
US20160238941A1 (en) 2016-08-18
TWI659269B (zh) 2019-05-11
KR20160077116A (ko) 2016-07-01

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Granted publication date: 20190129

Termination date: 20200925