JP2016532864A - ピクセルを備えたマイクロシステムの製造方法 - Google Patents
ピクセルを備えたマイクロシステムの製造方法 Download PDFInfo
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- JP2016532864A JP2016532864A JP2016530460A JP2016530460A JP2016532864A JP 2016532864 A JP2016532864 A JP 2016532864A JP 2016530460 A JP2016530460 A JP 2016530460A JP 2016530460 A JP2016530460 A JP 2016530460A JP 2016532864 A JP2016532864 A JP 2016532864A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims description 25
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 109
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 13
- 239000013067 intermediate product Substances 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 5
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 34
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 33
- 239000010408 film Substances 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 4
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 3
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 8
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910052845 zircon Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/023—Particular leg structure or construction or shape; Nanotubes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/046—Materials; Selection of thermal materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
- H10N15/15—Thermoelectric active materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
- G01J2005/345—Arrays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Micromachines (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (8)
- ピクセルを備えたマイクロシステム(1)の製造方法であって、
シリコンウェハを準備するステップと;
前記シリコンウェハの酸化により、前記シリコンウェハの表面に、200nm〜1000nmの厚さを有する基底層(5)として、熱的な酸化ケイ素膜を形成するステップと、
熱的な成膜法により、100nm〜700nmの厚さを有する支持体層(6)として、酸化ケイ素薄膜を前記基底層(5)に直接に形成するステップと、
熱的な成膜法により、40nm〜200nmの厚さを有する白金層を前記支持体層(6)に直接に形成し、前記シリコンウェハ、前記基底層(5)、前記支持体層(6)及び前記白金層を有する中間生成物を形成するステップと、
該中間生成物を室温に冷却するステップと、
前記白金層の不要な領域を除去することで、前記白金層をピクセル状に構造化し、前記支持体層(6)に、前記白金層の残留領域によって、ピクセル(7,11)の下部電極(8,12)をピクセル状に形成するステップと、
前記シリコンウェハの、前記基底層(5)とは反対の側の材料を除去してフレーム(3)を残し、該フレーム(3)により、前記基底層(5)と前記支持体層(6)とから形成されたダイヤフラム(4)を張設するステップと、
マイクロシステム(1)を仕上げるステップと、
を有する、ピクセルを備えたマイクロシステム(1)の製造方法。 - 前記白金層は、300℃〜550℃でスパッタリングされる、請求項1記載の製造方法。
- 熱的な成膜法により、0.2〜5μmの厚さを有するチタン酸ジルコン酸鉛層を、前記白金層に直接に形成して、前記中間生成物が、チタン酸ジルコン酸鉛層を有するようにするステップを有する、請求項1又は2記載の製造方法。
- 前記白金層をピクセル状に構造化する際に、前記チタン酸ジルコン酸鉛層の不要な領域を除去することにより、前記チタン酸ジルコン酸鉛層も同時に構造化され、各前記下部電極(8,12)に、前記チタン酸ジルコン酸鉛層の残留領域によって、各前記ピクセル(7,11)の、チタン酸ジルコン酸鉛ピクセル(9,13)が形成される、請求項3記載の製造方法。
- 熱的な成膜法により、半透過性で導電性の電極層を前記チタン酸ジルコン酸鉛層に直接に形成し、前記中間生成物が電極層を有するようにするステップを有する、請求項3又は4記載の製造方法。
- 前記電極層は、白金、又はニッケル−鉄化合物、又はニッケル−クロム化合物から成っている、請求項5記載の製造方法。
- 前記白金層と前記チタン酸ジルコン酸鉛層とをピクセル状に構造化する際に、第2の白金層の不要な領域を除去することにより、同時に前記電極層も構造化され、前記チタン酸ジルコン酸鉛ピクセル(9,13)上に、前記第2の白金層の残留領域によって、前記ピクセル(7,11)の上部電極(10,14)が形成される、請求項6記載の製造方法。
- 前記熱的な成膜法は、スパッタ法である、請求項1から7までのいずれか1項記載の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201310108280 DE102013108280B3 (de) | 2013-08-01 | 2013-08-01 | Verfahren zum Herstellen eines Mikrosystems mit Pixel |
DE102013108280.7 | 2013-08-01 | ||
PCT/EP2014/066084 WO2015014754A2 (de) | 2013-08-01 | 2014-07-25 | Verfahren zum herstellen eines mikrosystems mit pixel |
Publications (2)
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JP2016532864A true JP2016532864A (ja) | 2016-10-20 |
JP6429873B2 JP6429873B2 (ja) | 2018-11-28 |
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JP2016530460A Expired - Fee Related JP6429873B2 (ja) | 2013-08-01 | 2014-07-25 | ピクセルを備えたマイクロシステムの製造方法 |
Country Status (7)
Country | Link |
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US (1) | US9842959B2 (ja) |
EP (1) | EP3028021B1 (ja) |
JP (1) | JP6429873B2 (ja) |
KR (1) | KR20160040636A (ja) |
CN (1) | CN105593653A (ja) |
DE (1) | DE102013108280B3 (ja) |
WO (1) | WO2015014754A2 (ja) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58161834A (ja) * | 1982-03-03 | 1983-09-26 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | 赤外線放射検出器およびその製造方法 |
JPH07225152A (ja) * | 1993-12-13 | 1995-08-22 | Nec Corp | 熱型赤外線センサ |
JP2001343282A (ja) * | 2000-06-01 | 2001-12-14 | Matsushita Electric Ind Co Ltd | 赤外線検出素子、赤外線2次元イメージセンサおよびその製造方法 |
WO2004051760A1 (ja) * | 2002-12-05 | 2004-06-17 | Matsushita Electric Industrial Co., Ltd. | 焦電体素子及びその製造方法並びに赤外線センサ |
JP2008040240A (ja) * | 2006-08-08 | 2008-02-21 | Stanley Electric Co Ltd | 光偏向器及びその製造方法 |
JP2011216690A (ja) * | 2010-03-31 | 2011-10-27 | Panasonic Electric Works Co Ltd | 強誘電体デバイスの製造方法 |
US20120056308A1 (en) * | 2009-06-29 | 2012-03-08 | Commissariat A L'energie Atomique | Method of forming an electromechanical transducer device |
JP2012132874A (ja) * | 2010-12-24 | 2012-07-12 | Seiko Epson Corp | 検出装置、センサーデバイス及び電子機器 |
Family Cites Families (5)
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DE19525071A1 (de) * | 1995-07-10 | 1997-01-16 | Siemens Ag | Pyroelektrisches Bauelement und Verfahren zur Herstellung |
DE10103529B4 (de) * | 2001-01-26 | 2004-01-15 | Siemens Ag | Ferroelektrischer Kondensator, Verfahren zur Herstellung und Verwendung des Kondensators |
CN1692504A (zh) * | 2002-12-05 | 2005-11-02 | 松下电器产业株式会社 | 热电器件及其制造方法与红外线传感器 |
DE102007046451B4 (de) | 2007-09-28 | 2011-08-25 | Pyreos Ltd. | Vorrichtung zur Detektion von Wärmestrahlung mit hoher Auflösung, Verfahren zum Herstellen und Verwendung der Vorrichtung |
WO2011094393A1 (en) * | 2010-01-29 | 2011-08-04 | Research Triangle Institute | Methods for forming piezoelectric ultrasonic transducers, and associated apparatuses |
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2013
- 2013-08-01 DE DE201310108280 patent/DE102013108280B3/de active Active
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2014
- 2014-07-25 JP JP2016530460A patent/JP6429873B2/ja not_active Expired - Fee Related
- 2014-07-25 CN CN201480054691.1A patent/CN105593653A/zh active Pending
- 2014-07-25 EP EP14744323.8A patent/EP3028021B1/de active Active
- 2014-07-25 KR KR1020167005474A patent/KR20160040636A/ko not_active Application Discontinuation
- 2014-07-25 WO PCT/EP2014/066084 patent/WO2015014754A2/de active Application Filing
-
2016
- 2016-02-01 US US15/011,812 patent/US9842959B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58161834A (ja) * | 1982-03-03 | 1983-09-26 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | 赤外線放射検出器およびその製造方法 |
JPH07225152A (ja) * | 1993-12-13 | 1995-08-22 | Nec Corp | 熱型赤外線センサ |
JP2001343282A (ja) * | 2000-06-01 | 2001-12-14 | Matsushita Electric Ind Co Ltd | 赤外線検出素子、赤外線2次元イメージセンサおよびその製造方法 |
WO2004051760A1 (ja) * | 2002-12-05 | 2004-06-17 | Matsushita Electric Industrial Co., Ltd. | 焦電体素子及びその製造方法並びに赤外線センサ |
JP2008040240A (ja) * | 2006-08-08 | 2008-02-21 | Stanley Electric Co Ltd | 光偏向器及びその製造方法 |
US20120056308A1 (en) * | 2009-06-29 | 2012-03-08 | Commissariat A L'energie Atomique | Method of forming an electromechanical transducer device |
JP2011216690A (ja) * | 2010-03-31 | 2011-10-27 | Panasonic Electric Works Co Ltd | 強誘電体デバイスの製造方法 |
JP2012132874A (ja) * | 2010-12-24 | 2012-07-12 | Seiko Epson Corp | 検出装置、センサーデバイス及び電子機器 |
Also Published As
Publication number | Publication date |
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CN105593653A (zh) | 2016-05-18 |
EP3028021A2 (de) | 2016-06-08 |
DE102013108280B3 (de) | 2014-10-09 |
WO2015014754A2 (de) | 2015-02-05 |
JP6429873B2 (ja) | 2018-11-28 |
KR20160040636A (ko) | 2016-04-14 |
US9842959B2 (en) | 2017-12-12 |
US20160149071A1 (en) | 2016-05-26 |
WO2015014754A3 (de) | 2015-04-02 |
EP3028021B1 (de) | 2020-02-12 |
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