JP2016532622A - コロイド状半導体金属カルコゲナイドナノ構造 - Google Patents

コロイド状半導体金属カルコゲナイドナノ構造 Download PDF

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Publication number
JP2016532622A
JP2016532622A JP2016522963A JP2016522963A JP2016532622A JP 2016532622 A JP2016532622 A JP 2016532622A JP 2016522963 A JP2016522963 A JP 2016522963A JP 2016522963 A JP2016522963 A JP 2016522963A JP 2016532622 A JP2016532622 A JP 2016532622A
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Prior art keywords
chalcogenide
nanorods
zinc
medium
nanowires
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JP2016522963A
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JP2016532622A5 (enExample
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バニン，ユリ
チア，グオファ
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Qlight Nanotech Ltd
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Qlight Nanotech Ltd
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Publication of JP2016532622A publication Critical patent/JP2016532622A/ja
Publication of JP2016532622A5 publication Critical patent/JP2016532622A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0042—Assembling discrete nanostructures into nanostructural devices
    • B82B3/0057—Processes for assembling discrete nanostructures not provided for in groups B82B3/0047 - B82B3/0052
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/08—Sulfides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Luminescent Compositions (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2016522963A 2013-07-01 2014-07-01 コロイド状半導体金属カルコゲナイドナノ構造 Pending JP2016532622A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361841628P 2013-07-01 2013-07-01
US61/841,628 2013-07-01
US201361921663P 2013-12-30 2013-12-30
US61/921,663 2013-12-30
PCT/IL2014/050591 WO2015001557A1 (en) 2013-07-01 2014-07-01 Colloidal semiconductor metal chalcogenide nanostructures

Publications (2)

Publication Number Publication Date
JP2016532622A true JP2016532622A (ja) 2016-10-20
JP2016532622A5 JP2016532622A5 (enExample) 2017-07-27

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JP2016522963A Pending JP2016532622A (ja) 2013-07-01 2014-07-01 コロイド状半導体金属カルコゲナイドナノ構造

Country Status (7)

Country Link
US (1) US10160648B2 (enExample)
EP (1) EP3016906A1 (enExample)
JP (1) JP2016532622A (enExample)
KR (1) KR20160051731A (enExample)
CN (1) CN105555706B (enExample)
TW (1) TWI689097B (enExample)
WO (1) WO2015001557A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021525814A (ja) * 2018-05-30 2021-09-27 イッペン，クリスチャン 青色発光ＺｎＳｅ１−ｘＴｅｘ合金ナノ結晶の合成方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104638066B (zh) * 2015-02-09 2017-02-22 浙江大学 ZnO/ZnS/FeS2核壳结构阵列薄膜及制备方法
JP2018527594A (ja) * 2015-05-28 2018-09-20 キュライト ナノテク リミテッドＱｌｉｇｈｔ Ｎａｎｏｔｅｃｈ Ｌｔｄ． シードナノ粒子、それらの製造および使用
WO2017046268A1 (en) * 2015-09-16 2017-03-23 The University Of Manchester 2d materials
JP7018021B2 (ja) * 2015-12-31 2022-02-09 ダウ グローバル テクノロジーズ エルエルシー ナノ構造材料の連続フロー合成
JP6602211B2 (ja) * 2016-01-22 2019-11-06 株式会社堀場製作所 粒子分析装置、粒子分析方法及び粒子分析プログラム
WO2018193445A1 (en) * 2017-04-19 2018-10-25 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd Semiconductor nanostructures and applications
EP3687940A4 (en) * 2017-09-27 2021-07-28 The Regents of The University of Michigan SELF-ASSEMBLY PROCESS FOR THE MANUFACTURE OF IGEL-SHAPED PARTICLES
JP6690886B2 (ja) * 2017-10-12 2020-04-28 Ｎｓマテリアルズ株式会社 量子ドットの製造方法
CN114558592B (zh) * 2022-03-09 2023-11-14 北方民族大学 一种ZnO/ZnS纳米棒核壳结构光催化剂及其制备方法

Citations (7)

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JP2004510678A (ja) * 2000-10-04 2004-04-08 ザ　ボード　オブ　トラスティーズ　オブ　ザ　ユニバーシティ　オブ　アーカンソー コロイドナノ結晶の合成
US20090142558A1 (en) * 2007-10-29 2009-06-04 Portland State University Mono-layer and multi-layer nanowire networks
JP2010144032A (ja) * 2008-12-18 2010-07-01 National Institute For Materials Science 偏光調整型電気光学装置のための液晶ディスプレイ用ナノロッド配合物
US20130115455A1 (en) * 2010-09-16 2013-05-09 Yissum Research Development Company Of The Hebrew Univ. Of Jerusalem Ltd. Anistropic semiconductor nanoparticles
US20130183442A1 (en) * 2011-12-07 2013-07-18 East China University Of Science And Technology Methods of producing cadmium selenide multi-pod nanocrystals
CN103288122A (zh) * 2013-05-28 2013-09-11 浙江大学 一种菱形氧化锌纳米棒阵列及其制备方法
US20140252316A1 (en) * 2011-10-04 2014-09-11 Hao Yan Quantum dots, rods, wires, sheets, and ribbons, and uses thereof

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CN1199850C (zh) * 2003-05-23 2005-05-04 中国地质大学（武汉） 高纯纳米硫的制备方法

Patent Citations (9)

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JP2004510678A (ja) * 2000-10-04 2004-04-08 ザ　ボード　オブ　トラスティーズ　オブ　ザ　ユニバーシティ　オブ　アーカンソー コロイドナノ結晶の合成
US20090142558A1 (en) * 2007-10-29 2009-06-04 Portland State University Mono-layer and multi-layer nanowire networks
JP2010144032A (ja) * 2008-12-18 2010-07-01 National Institute For Materials Science 偏光調整型電気光学装置のための液晶ディスプレイ用ナノロッド配合物
US20130115455A1 (en) * 2010-09-16 2013-05-09 Yissum Research Development Company Of The Hebrew Univ. Of Jerusalem Ltd. Anistropic semiconductor nanoparticles
JP2013539798A (ja) * 2010-09-16 2013-10-28 イッスム・リサーチ・ディベロップメント・カンパニー・オブ・ザ・ヘブルー・ユニバーシティ・オブ・エルサレム・リミテッド 異方性半導体ナノ粒子
US20140252316A1 (en) * 2011-10-04 2014-09-11 Hao Yan Quantum dots, rods, wires, sheets, and ribbons, and uses thereof
US20130183442A1 (en) * 2011-12-07 2013-07-18 East China University Of Science And Technology Methods of producing cadmium selenide multi-pod nanocrystals
JP2015505796A (ja) * 2011-12-07 2015-02-26 イースト チャイナ ユニバーシティ オブ サイエンス アンド テクノロジー セレン化カドミウム多脚型ナノ結晶の製造方法
CN103288122A (zh) * 2013-05-28 2013-09-11 浙江大学 一种菱形氧化锌纳米棒阵列及其制备方法

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ACHARYA, SHINJITA ET AL.: "Material Diffusion and Doping of Mn in Wurtzite ZnSe Nanorods", THE JOURNAL OF PHYSICAL CHEMISTRY C, vol. 117, no. 11, JPN5016007759, 21 March 2013 (2013-03-21), pages 6006 - 6012, ISSN: 0003927362 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021525814A (ja) * 2018-05-30 2021-09-27 イッペン，クリスチャン 青色発光ＺｎＳｅ１−ｘＴｅｘ合金ナノ結晶の合成方法
JP7357185B2 (ja) 2018-05-30 2023-10-06 ナノシス・インク． 青色発光ＺｎＳｅ１－ｘＴｅｘ合金ナノ結晶の合成方法

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Publication number Publication date
US10160648B2 (en) 2018-12-25
KR20160051731A (ko) 2016-05-11
EP3016906A1 (en) 2016-05-11
CN105555706B (zh) 2020-10-16
TWI689097B (zh) 2020-03-21
WO2015001557A1 (en) 2015-01-08
CN105555706A (zh) 2016-05-04
US20160115027A1 (en) 2016-04-28
TW201523874A (zh) 2015-06-16

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