CN105555706B - 胶态半导体金属硫族化物纳米结构 - Google Patents

胶态半导体金属硫族化物纳米结构 Download PDF

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Publication number
CN105555706B
CN105555706B CN201480046941.7A CN201480046941A CN105555706B CN 105555706 B CN105555706 B CN 105555706B CN 201480046941 A CN201480046941 A CN 201480046941A CN 105555706 B CN105555706 B CN 105555706B
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nanowires
nanorods
zinc
zinc chalcogenide
znse
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Chinese (zh)
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CN105555706A (zh
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乌里·巴尼恩
夹国华
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Yissum Research Development Co of Hebrew University of Jerusalem
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Yissum Research Development Co of Hebrew University of Jerusalem
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0042—Assembling discrete nanostructures into nanostructural devices
    • B82B3/0057—Processes for assembling discrete nanostructures not provided for in groups B82B3/0047 - B82B3/0052
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/08—Sulfides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Luminescent Compositions (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
CN201480046941.7A 2013-07-01 2014-07-01 胶态半导体金属硫族化物纳米结构 Expired - Fee Related CN105555706B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361841628P 2013-07-01 2013-07-01
US61/841,628 2013-07-01
US201361921663P 2013-12-30 2013-12-30
US61/921,663 2013-12-30
PCT/IL2014/050591 WO2015001557A1 (en) 2013-07-01 2014-07-01 Colloidal semiconductor metal chalcogenide nanostructures

Publications (2)

Publication Number Publication Date
CN105555706A CN105555706A (zh) 2016-05-04
CN105555706B true CN105555706B (zh) 2020-10-16

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CN201480046941.7A Expired - Fee Related CN105555706B (zh) 2013-07-01 2014-07-01 胶态半导体金属硫族化物纳米结构

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Country Link
US (1) US10160648B2 (enExample)
EP (1) EP3016906A1 (enExample)
JP (1) JP2016532622A (enExample)
KR (1) KR20160051731A (enExample)
CN (1) CN105555706B (enExample)
TW (1) TWI689097B (enExample)
WO (1) WO2015001557A1 (enExample)

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Publication number Priority date Publication date Assignee Title
CN104638066B (zh) * 2015-02-09 2017-02-22 浙江大学 ZnO/ZnS/FeS2核壳结构阵列薄膜及制备方法
KR20180014006A (ko) 2015-05-28 2018-02-07 큐라이트 나노테크 리미티드 시딩된 나노입자들, 이들의 제조 및 용도
WO2017046268A1 (en) * 2015-09-16 2017-03-23 The University Of Manchester 2d materials
US20180273844A1 (en) * 2015-12-31 2018-09-27 Dow Global Technologies Llc Continuous flow syntheses of nanostructure materials
JP6602211B2 (ja) * 2016-01-22 2019-11-06 株式会社堀場製作所 粒子分析装置、粒子分析方法及び粒子分析プログラム
US20210130690A1 (en) * 2017-04-19 2021-05-06 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd Semiconductor nanostructures and applications
WO2019067734A1 (en) * 2017-09-27 2019-04-04 The Regents Of The University Of Michigan METHODS OF SELF-ASSEMBLING TO FORM HERISH-LIKE PARTICLES
AU2018348597A1 (en) * 2017-10-12 2020-04-23 Ns Materials Inc. Quantum dot, method for manufacturing same, wavelength conversion member using quantum dot, illumination member, backlight device, and display device
KR102874538B1 (ko) * 2018-05-30 2025-10-21 소에이 가가쿠 고교 가부시키가이샤 청색 방출 ZnSe1-xTex 합금 나노결정의 합성 방법
CN114558592B (zh) * 2022-03-09 2023-11-14 北方民族大学 一种ZnO/ZnS纳米棒核壳结构光催化剂及其制备方法

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ATE491230T1 (de) * 2000-10-04 2010-12-15 Univ Arkansas Synthese von kolloidalen metall chalcogenide nanokristallen
CN1199850C (zh) * 2003-05-23 2005-05-04 中国地质大学（武汉） 高纯纳米硫的制备方法
US8568871B2 (en) * 2007-10-29 2013-10-29 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Portland State University Mono-layer and multi-layer nanowire networks
JP5382691B2 (ja) 2008-12-18 2014-01-08 独立行政法人物質・材料研究機構 偏光調整型電気光学装置のための液晶ディスプレイ用ナノロッド配合物
WO2012035535A1 (en) * 2010-09-16 2012-03-22 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Anistropic semiconductor nanoparticles
US9202867B2 (en) * 2011-10-04 2015-12-01 Arizona Board Of Regents Nanocrystals containing CdTe core with CdS and ZnS coatings
CN103998656B (zh) * 2011-12-07 2017-05-24 华东理工大学 硒化镉多足纳米晶体的制备方法
CN103288122B (zh) * 2013-05-28 2014-11-05 浙江大学 一种菱形氧化锌纳米棒阵列及其制备方法

Non-Patent Citations (3)

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"Carbon-assisted fabrication of novel ATO structures";Zaiyin huang et al.;《Chemistry letters》;20070101;第36卷(第3期);第449页第1段以及图2（b） *
"Controlled Colloidal Growth of Ultrathin Single-Crystal ZnS Nanowires with a Magic-Size Diameter";Zhengtao Deng et al.;《Angew. Chem. Int. Ed.》;20101004;第49卷;第8695页页第3-6段、第8697页第3段 *
"Material Diffusion and Doping of Mn in Wurtzite ZnSe Nanorods";Shinjita Acharya et al.;《J. Phys. Chem. C》;20130225;第117卷;第6007页第2段、第6011页第1-5段以及图2 *

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Publication number Publication date
US10160648B2 (en) 2018-12-25
WO2015001557A1 (en) 2015-01-08
US20160115027A1 (en) 2016-04-28
EP3016906A1 (en) 2016-05-11
TW201523874A (zh) 2015-06-16
CN105555706A (zh) 2016-05-04
JP2016532622A (ja) 2016-10-20
TWI689097B (zh) 2020-03-21
KR20160051731A (ko) 2016-05-11

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