JP2016530184A - 流動床反応器を操作する方法 - Google Patents
流動床反応器を操作する方法 Download PDFInfo
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- JP2016530184A JP2016530184A JP2016522390A JP2016522390A JP2016530184A JP 2016530184 A JP2016530184 A JP 2016530184A JP 2016522390 A JP2016522390 A JP 2016522390A JP 2016522390 A JP2016522390 A JP 2016522390A JP 2016530184 A JP2016530184 A JP 2016530184A
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- Prior art keywords
- gas
- reactor
- purging
- halosilane
- purge
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
- C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
- C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
- C01B33/10763—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane from silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
- C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
- C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
−不活性状態が制御された走行曲線で確立される。
−あらゆる爆発性混合物が防止される。
−水分の侵入による製品の汚染が低減される。
1.パージ操作a:O2および水分を除去するための規定された期間、反応器および流入ガスラインを不活性ガス(N2、Ar、He)でパージング。
1.クロロシランフィードを閉じる。
Claims (10)
- 不活性ガスによる反応器および流入ガスラインのパージa;H2による反応器および流入ガスラインのパージb;ハロシランまたはハロシランを含む混合物による反応器および流入ガスラインのパージcとを含む、流動床反応器を操作する方法。
- H2によるパージングは100から1000℃の温度までの加熱と同時に起こる請求項1に記載の方法。
- a−b−cの順のパージ操作の後、ハロシランを含む反応ガスによる、シード粒子上への多結晶シリコンの蒸着が続く請求項1または請求項2に記載の方法。
- 反応ガスが、水素およびハロシランを含む請求項3に記載の方法。
- 反応ガスがハロシランを含む、シード粒子上の多結晶シリコンの蒸着の後、ハロシランを含む反応ガスの供給の停止、次いでパージ操作b−aが続き、続いて反応器が開放され、分解される請求項1から4のいずれか一項に記載の方法。
- 続いて反応器が再組立てされ、シード粒子が添加される請求項5に記載の方法。
- 不活性ガスによる反応器および流入ガスラインのさらなるパージが反応器の分解および再組立ての間に行われる請求項6に記載の方法。
- パージa、b、およびcの1つ以上が圧力スイングパージングによって強化される請求項1から7のいずれか一項に記載の方法。
- 不活性ガスが、窒素または希ガスである請求項1から8のいずれか一項に記載の方法。
- ハロシランがトリクロロシランである請求項1から9のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013212406.6 | 2013-06-27 | ||
DE102013212406.6A DE102013212406A1 (de) | 2013-06-27 | 2013-06-27 | Verfahren zum Betreiben eines Wirbelschichtreaktors |
PCT/EP2014/062661 WO2014206805A1 (de) | 2013-06-27 | 2014-06-17 | Verfahren zum betreiben eines wirbelschichtreaktors |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016530184A true JP2016530184A (ja) | 2016-09-29 |
JP6178006B2 JP6178006B2 (ja) | 2017-08-09 |
Family
ID=50943323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016522390A Expired - Fee Related JP6178006B2 (ja) | 2013-06-27 | 2014-06-17 | 流動床反応器を操作する方法 |
Country Status (11)
Country | Link |
---|---|
US (1) | US10526206B2 (ja) |
EP (1) | EP3013744B1 (ja) |
JP (1) | JP6178006B2 (ja) |
KR (1) | KR101842373B1 (ja) |
CN (1) | CN105339303B (ja) |
DE (1) | DE102013212406A1 (ja) |
ES (1) | ES2647501T3 (ja) |
MY (1) | MY170696A (ja) |
SA (1) | SA515370311B1 (ja) |
TW (1) | TWI526395B (ja) |
WO (1) | WO2014206805A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11440803B2 (en) | 2016-12-14 | 2022-09-13 | Wacker Chemie Ag | Process for preparing polycrystalline silicon |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016203082A1 (de) * | 2016-02-26 | 2017-08-31 | Wacker Chemie Ag | Verfahren zur Abscheidung einer In Situ-Beschichtung auf thermisch und chemisch beanspruchten Bauteilen eines Wirbelschichtreaktors zur Herstellung von hochreinem Polysilicium |
WO2018108257A1 (de) * | 2016-12-14 | 2018-06-21 | Wacker Chemie Ag | Verfahren zur herstellung von polykristallinem silicium |
US20220041455A1 (en) * | 2018-12-18 | 2022-02-10 | Wacker Chemie Ag | Process for preparing chlorsilanes |
CN115594184B (zh) * | 2022-10-31 | 2023-10-10 | 唐山三孚硅业股份有限公司 | 电子级四氯化硅生产系统及方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5983923A (ja) * | 1982-09-28 | 1984-05-15 | モトロ−ラ・インコ−ポレ−テツド | 粒子とソースガスを反応させ、被覆する装置及び方法 |
JPS6355112A (ja) * | 1985-12-28 | 1988-03-09 | 財団法人 韓国化学研究所 | 極超短波加熱流動床による高純度多結晶シリコン製造方法およびその装置 |
JPH10158006A (ja) * | 1996-11-26 | 1998-06-16 | Tokuyama Corp | 粒状ポリシリコンの製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4359490A (en) | 1981-07-13 | 1982-11-16 | Fairchild Camera & Instrument Corp. | Method for LPCVD co-deposition of metal and silicon to form metal silicide |
US4642228A (en) * | 1985-07-24 | 1987-02-10 | Angel Sanjurjo | Fluxing system for reactors for production of silicon |
US6827786B2 (en) | 2000-12-26 | 2004-12-07 | Stephen M Lord | Machine for production of granular silicon |
DE10203833B4 (de) | 2002-01-31 | 2007-02-08 | Siltronic Ag | Verfahren und Vorrichtung zur Differenzdruckregelung an Epitaxiereaktoren |
KR100813131B1 (ko) * | 2006-06-15 | 2008-03-17 | 한국화학연구원 | 유동층 반응기를 이용한 다결정 실리콘의 지속 가능한제조방법 |
DE102006037020A1 (de) | 2006-08-08 | 2008-02-14 | Wacker Chemie Ag | Verfahren und Vorrichtung zur Herstellung von hochreinem polykristallinem Silicium mit reduziertem Dotierstoffgehalt |
WO2009049477A1 (fr) * | 2007-09-20 | 2009-04-23 | Changzhou Ennoah Energy Technology Corporation Ltd. | Procédé et appareil permettant la production de feuilles de silicium polycristallin |
US8765090B2 (en) * | 2010-09-08 | 2014-07-01 | Dow Corning Corporation | Method for preparing a trihalosilane |
-
2013
- 2013-06-27 DE DE102013212406.6A patent/DE102013212406A1/de not_active Withdrawn
-
2014
- 2014-06-17 CN CN201480035962.9A patent/CN105339303B/zh not_active Expired - Fee Related
- 2014-06-17 US US14/899,143 patent/US10526206B2/en not_active Expired - Fee Related
- 2014-06-17 MY MYPI2015003011A patent/MY170696A/en unknown
- 2014-06-17 JP JP2016522390A patent/JP6178006B2/ja not_active Expired - Fee Related
- 2014-06-17 ES ES14730539.5T patent/ES2647501T3/es active Active
- 2014-06-17 WO PCT/EP2014/062661 patent/WO2014206805A1/de active Application Filing
- 2014-06-17 EP EP14730539.5A patent/EP3013744B1/de not_active Not-in-force
- 2014-06-17 KR KR1020167002240A patent/KR101842373B1/ko active IP Right Grant
- 2014-06-18 TW TW103121005A patent/TWI526395B/zh not_active IP Right Cessation
-
2015
- 2015-12-24 SA SA515370311A patent/SA515370311B1/ar unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5983923A (ja) * | 1982-09-28 | 1984-05-15 | モトロ−ラ・インコ−ポレ−テツド | 粒子とソースガスを反応させ、被覆する装置及び方法 |
JPS6355112A (ja) * | 1985-12-28 | 1988-03-09 | 財団法人 韓国化学研究所 | 極超短波加熱流動床による高純度多結晶シリコン製造方法およびその装置 |
JPH10158006A (ja) * | 1996-11-26 | 1998-06-16 | Tokuyama Corp | 粒状ポリシリコンの製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11440803B2 (en) | 2016-12-14 | 2022-09-13 | Wacker Chemie Ag | Process for preparing polycrystalline silicon |
Also Published As
Publication number | Publication date |
---|---|
KR101842373B1 (ko) | 2018-03-26 |
CN105339303B (zh) | 2017-12-19 |
EP3013744A1 (de) | 2016-05-04 |
JP6178006B2 (ja) | 2017-08-09 |
EP3013744B1 (de) | 2017-09-20 |
TW201500280A (zh) | 2015-01-01 |
MY170696A (en) | 2019-08-26 |
DE102013212406A1 (de) | 2014-12-31 |
ES2647501T3 (es) | 2017-12-21 |
US10526206B2 (en) | 2020-01-07 |
SA515370311B1 (ar) | 2017-06-27 |
CN105339303A (zh) | 2016-02-17 |
TWI526395B (zh) | 2016-03-21 |
US20160145109A1 (en) | 2016-05-26 |
WO2014206805A1 (de) | 2014-12-31 |
KR20160022930A (ko) | 2016-03-02 |
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