JP2016529397A - シートのコーティング方法 - Google Patents
シートのコーティング方法 Download PDFInfo
- Publication number
- JP2016529397A JP2016529397A JP2016527066A JP2016527066A JP2016529397A JP 2016529397 A JP2016529397 A JP 2016529397A JP 2016527066 A JP2016527066 A JP 2016527066A JP 2016527066 A JP2016527066 A JP 2016527066A JP 2016529397 A JP2016529397 A JP 2016529397A
- Authority
- JP
- Japan
- Prior art keywords
- fluid
- sheet
- reactor
- coating
- sheets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 58
- 239000012530 fluid Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000011248 coating agent Substances 0.000 claims abstract description 37
- 238000005137 deposition process Methods 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims description 20
- 238000000231 atomic layer deposition Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 238000009826 distribution Methods 0.000 claims description 6
- 125000002524 organometallic group Chemical group 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- XPBBUZJBQWWFFJ-UHFFFAOYSA-N fluorosilane Chemical compound [SiH3]F XPBBUZJBQWWFFJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000001338 self-assembly Methods 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 42
- 239000010410 layer Substances 0.000 description 37
- 229910052757 nitrogen Inorganic materials 0.000 description 21
- 239000007789 gas Substances 0.000 description 11
- 238000010926 purge Methods 0.000 description 11
- 239000000243 solution Substances 0.000 description 10
- 238000001228 spectrum Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 229910010413 TiO 2 Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000002105 nanoparticle Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229920000371 poly(diallyldimethylammonium chloride) polymer Polymers 0.000 description 6
- 229920001464 poly(sodium 4-styrenesulfonate) Polymers 0.000 description 6
- 239000000376 reactant Substances 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- IYLGZMTXKJYONK-ACLXAEORSA-N (12s,15r)-15-hydroxy-11,16-dioxo-15,20-dihydrosenecionan-12-yl acetate Chemical compound O1C(=O)[C@](CC)(O)C[C@@H](C)[C@](C)(OC(C)=O)C(=O)OCC2=CCN3[C@H]2[C@H]1CC3 IYLGZMTXKJYONK-ACLXAEORSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000007900 aqueous suspension Substances 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000006060 molten glass Substances 0.000 description 2
- IYLGZMTXKJYONK-UHFFFAOYSA-N ruwenine Natural products O1C(=O)C(CC)(O)CC(C)C(C)(OC(C)=O)C(=O)OCC2=CCN3C2C1CC3 IYLGZMTXKJYONK-UHFFFAOYSA-N 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 240000006829 Ficus sundaica Species 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000867 polyelectrolyte Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/25—Oxides by deposition from the liquid phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/42—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating of an organic material and at least one non-metal coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2203/00—Other substrates
- B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
- B05D2203/35—Glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
- C03C2217/42—Coatings comprising at least one inhomogeneous layer consisting of particles only
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/73—Anti-reflective coatings with specific characteristics
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
- G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Wood Science & Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Description
図4に示す反応器を、ドーム型の蓋を備えたSavannah 200 Atomic Layer Deposition Unitに据え付けた。約20枚の15.9×11.4cm、0.2mm厚の光学グレードのホウケイ酸ガラスプレートを反応器に装填した(ガラスプレート部品番号260454(カリフォルニア州レディング(Redding)のテッドペラ社(Ted Pella Inc)))。17%の濃度に設定したINUSA Ozone Generatorによってオゾンを供給した。
用いられ得るコーティング溶液には、以下のものが挙げられる。
1)pHを硝酸でpH 3に調節した水にて0.1重量%で分子量240Kを持つ、塩化ポリジアリルジメチルアンモニウム(PDADMAC)(ペンシルバニア州ウォーリントン(Warrington)のポリサイエンス社(PolySciences, Inc.)から20重量%の水溶液として入手可能なプラスに帯電したポリマー)。
2)pHを硝酸でpH 3に調節した水にて0.1重量%の濃度で5nmの平均径を持つ、シリカ(SiO2)ナノ粒子(イリノイ州ネーパービル(Naperville)のナルコ社(Nalco Company)から「Nalco 2326」の商品名で水性懸濁液として入手可能)。SiO2はpH 3でマイナスに帯電する。
3)pHを硝酸でpH 2に調節し、NaClを加えて0.1Mの濃度にした水にて0.1重量%の濃度で5nm〜15nmの平均径を持つアナターゼチタン(TiO2)ナノ粒子(U.S.リサーチナノマテリアルズ(U.S. Research Nanomaterials)15重量%の水性懸濁液として入手可能)。TiO2はpH 2でプラスに帯電する。
4)pHを硝酸でpH 2に調節した水にて0.1重量%で分子量70Kを持つ、ポリ(4−スチレンスルホン酸ナトリウム)(PSS)(シグマアルドリッチ社(ミズーリ州セントルイス(St. Louis)から入手可能な、マイナスに帯電したポリマー)。
Claims (23)
- シートをコーティングする方法であって、
複数のシートに前記シートの間に間隙を設ける工程であって、
前記シートは入口縁部と出口縁部とを有する、工程と、
流体を前記間隙に押し通す工程とを含み、
前記間隙を通した前記流体流れは、実質的に栓流のプロファイルを有し、
かつ前記流体は、自己制限堆積プロセスにおいて前記複数のシートの少なくとも1つの表面上に被膜を堆積させる、方法。 - 前記流体は気体である、請求項1に記載の方法。
- 前記流体は液体又は液体と気体との組合わせである、請求項1に記載の方法。
- 前記入口縁部にかかる前記流体の入口圧力と前記出口縁部にかかる前記流体の出口圧力との比が少なくとも1.01である、請求項1に記載の方法。
- 前記比は少なくとも1.05である、請求項4に記載の方法。
- 前記比は少なくとも1.1である、請求項5に記載の方法。
- 前記比は少なくとも1.2である、請求項6に記載の方法。
- 前記自己制限堆積プロセスは原子層堆積を含む、請求項1に記載の方法。
- 前記自己制限堆積プロセスは交互吸着自己組織化を含む、請求項1に記載の方法。
- 前記間隙は2mm〜6mmの範囲内にある、請求項1に記載の方法。
- 前記複数のシートを反応器内に置き、流体を前記反応器内に押し通す工程を更に含む、請求項1に記載の方法。
- 前記反応器内に押し通される前記流体の少なくとも50%が前記シートの間の前記間隙を通過する、請求項11に記載の方法。
- 前記反応器内に押し通される前記流体の少なくとも80%が前記シートの間の前記間隙を通過する、請求項12に記載の方法。
- 前記反応器は、前記シートの前方にガス流のための空間を設け、前記空間は1mm〜5mmの範囲の幅を有する、請求項11に記載の方法。
- 前記流体は、各シートの第1の表面上に、また各シートの第2の表面上に被膜を堆積させる、請求項1に記載の方法。
- 前記シートは、ポリマー、ガラス、金属、セラミック、又はそれらの組合わせを含む、請求項1に記載の方法。
- 前記シートはガラスシートである、請求項16に記載の方法。
- 前記シートはサファイアを含む、請求項1に記載の方法。
- 前記被膜は、有機金属材料若しくはフルオロシラン又はそれらの組合わせを含む、請求項1に記載の方法。
- 前記間隙に流体を押し通す工程は、第1の組みの間隙に第1の流体を押し通し、前記第1の組みの間隙とは異なる第2の組みの間隙に前記第1の流体とは異なる第2の流体を押し通すことを含む、請求項1に記載の方法。
- 前記第1の流体は、少なくとも1枚のシートの第1の主表面上に第1の被膜を堆積させ、前記第2の流体は、前記少なくとも1枚のシートの第2の主表面上に前記第2の被膜を堆積させる、請求項20に記載の方法。
- 物品であって、
プレートラックと、
コーティング済みプレートの間に間隙を持たせて前記プレートラックに配置された複数のコーティング済みプレートであって、入口縁部を有する、前記複数のコーティング済みプレートと、
前記入口縁部に隣接して配置されたマニホールドであって、流体分配システムを有する、マニホールドと、を備える、物品。 - 前記コーティング済みプレートの間の間隙は、第1組の間隙と、前記第1組の間隙とは異なる第2組の間隙とを含み、前記流体分配システムは、前記第1組の間隙に流体を分配するための第1組のチャネルと、前記第2組の間隙に流体を分配するための、前記第1組のチャネルとは異なる第2組のチャネルとを有する、請求項22に記載の物品。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361846675P | 2013-07-16 | 2013-07-16 | |
US61/846,675 | 2013-07-16 | ||
PCT/US2014/046828 WO2015009811A1 (en) | 2013-07-16 | 2014-07-16 | Sheet coating method |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016529397A true JP2016529397A (ja) | 2016-09-23 |
JP2016529397A5 JP2016529397A5 (ja) | 2017-08-31 |
Family
ID=52346697
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016527066A Ceased JP2016529397A (ja) | 2013-07-16 | 2014-07-16 | シートのコーティング方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10072333B2 (ja) |
EP (1) | EP3022329A4 (ja) |
JP (1) | JP2016529397A (ja) |
KR (1) | KR20160031517A (ja) |
CN (1) | CN105392919B (ja) |
WO (1) | WO2015009811A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015187388A1 (en) | 2014-06-02 | 2015-12-10 | 3M Innovative Properties Company | Led with remote phosphor and shell reflector |
CN212460103U (zh) | 2017-10-18 | 2021-02-02 | 3M创新有限公司 | 光纤连接系统 |
CN212255779U (zh) | 2017-10-18 | 2020-12-29 | 3M创新有限公司 | 光纤连接系统 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020108570A1 (en) * | 2000-04-14 | 2002-08-15 | Sven Lindfors | Method and apparatus of growing a thin film onto a substrate |
US20060032442A1 (en) * | 2004-07-15 | 2006-02-16 | Kazuhide Hasebe | Method and apparatus for forming silicon oxide film |
US20070065578A1 (en) * | 2005-09-21 | 2007-03-22 | Applied Materials, Inc. | Treatment processes for a batch ALD reactor |
JP2009246365A (ja) * | 2008-03-28 | 2009-10-22 | Tokyo Electron Ltd | 原子層堆積(ald)法及び化学気相成長(cvd)法を用いた高誘電率膜のその場ハイブリッド堆積 |
US20100166955A1 (en) * | 2008-11-01 | 2010-07-01 | Cambridge Nanotech Inc. | System and method for thin film deposition |
US20120196050A1 (en) * | 2009-07-30 | 2012-08-02 | Adrianus Johannes Petrus Maria Vermeer | Apparatus and method for atomic layer deposition |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3103186B2 (ja) * | 1992-03-19 | 2000-10-23 | 富士通株式会社 | 原子層エピタキシー装置および原子層エピタキシー法 |
US20030049372A1 (en) | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
US6812157B1 (en) * | 1999-06-24 | 2004-11-02 | Prasad Narhar Gadgil | Apparatus for atomic layer chemical vapor deposition |
JP3670628B2 (ja) | 2002-06-20 | 2005-07-13 | 株式会社東芝 | 成膜方法、成膜装置、および半導体装置の製造方法 |
US20040157047A1 (en) | 2003-02-06 | 2004-08-12 | Ali Mehrabi | Continuous process for manufacturing electrostatically self-assembled coatings |
US20050268848A1 (en) | 2004-04-28 | 2005-12-08 | Nanodynamics, Inc | Atomic layer deposition apparatus and process |
DE102004056170A1 (de) * | 2004-08-06 | 2006-03-16 | Aixtron Ag | Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung mit hohem Durchsatz |
US7407892B2 (en) * | 2005-05-11 | 2008-08-05 | Micron Technology, Inc. | Deposition methods |
KR20080028963A (ko) * | 2005-07-08 | 2008-04-02 | 에비자 테크놀로지, 인크. | 실리콘 함유 필름의 증착 방법 |
TWI267994B (en) * | 2005-08-24 | 2006-12-01 | Advanced Semiconductor Eng | Package structure and manufacturing process thereof |
US8993055B2 (en) * | 2005-10-27 | 2015-03-31 | Asm International N.V. | Enhanced thin film deposition |
US7863198B2 (en) * | 2006-05-18 | 2011-01-04 | Micron Technology, Inc. | Method and device to vary growth rate of thin films over semiconductor structures |
JP4228008B2 (ja) | 2006-08-23 | 2009-02-25 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
US8234998B2 (en) | 2006-09-08 | 2012-08-07 | Massachusetts Institute Of Technology | Automated layer by layer spray technology |
US8348390B2 (en) * | 2011-05-18 | 2013-01-08 | Xerox Corporation | Enhancing superoleophobicity and reducing adhesion through multi-scale roughness by ALD/CVD technique in inkjet application |
US20130129922A1 (en) * | 2011-11-21 | 2013-05-23 | Qualcomm Mems Technologies, Inc. | Batch processing for electromechanical systems and equipment for same |
-
2014
- 2014-07-16 CN CN201480040452.0A patent/CN105392919B/zh not_active Expired - Fee Related
- 2014-07-16 WO PCT/US2014/046828 patent/WO2015009811A1/en active Application Filing
- 2014-07-16 EP EP14826501.0A patent/EP3022329A4/en not_active Withdrawn
- 2014-07-16 US US14/905,223 patent/US10072333B2/en active Active
- 2014-07-16 KR KR1020167003497A patent/KR20160031517A/ko not_active Application Discontinuation
- 2014-07-16 JP JP2016527066A patent/JP2016529397A/ja not_active Ceased
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020108570A1 (en) * | 2000-04-14 | 2002-08-15 | Sven Lindfors | Method and apparatus of growing a thin film onto a substrate |
US20060032442A1 (en) * | 2004-07-15 | 2006-02-16 | Kazuhide Hasebe | Method and apparatus for forming silicon oxide film |
US20070065578A1 (en) * | 2005-09-21 | 2007-03-22 | Applied Materials, Inc. | Treatment processes for a batch ALD reactor |
JP2009246365A (ja) * | 2008-03-28 | 2009-10-22 | Tokyo Electron Ltd | 原子層堆積(ald)法及び化学気相成長(cvd)法を用いた高誘電率膜のその場ハイブリッド堆積 |
US20100166955A1 (en) * | 2008-11-01 | 2010-07-01 | Cambridge Nanotech Inc. | System and method for thin film deposition |
US20120196050A1 (en) * | 2009-07-30 | 2012-08-02 | Adrianus Johannes Petrus Maria Vermeer | Apparatus and method for atomic layer deposition |
Non-Patent Citations (1)
Title |
---|
社団法人 化学工学協会, 化学工学辞典, vol. 改訂3版, JPN6018030966, 20 March 1986 (1986-03-20), JP, pages p.293−294 * |
Also Published As
Publication number | Publication date |
---|---|
US10072333B2 (en) | 2018-09-11 |
EP3022329A4 (en) | 2017-03-22 |
KR20160031517A (ko) | 2016-03-22 |
EP3022329A1 (en) | 2016-05-25 |
WO2015009811A1 (en) | 2015-01-22 |
CN105392919B (zh) | 2018-01-02 |
CN105392919A (zh) | 2016-03-09 |
US20160153087A1 (en) | 2016-06-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11208717B2 (en) | Process for making of glass articles with optical and easy-to-clean coatings | |
JP6896671B2 (ja) | 光学コーティングとクリーニング容易なコーティングを有するガラス物品を製造する方法 | |
US10457828B2 (en) | Laminate and gas barrier film | |
JP5394867B2 (ja) | ガスバリア膜およびガスバリアフィルム | |
CN101573468B (zh) | 制备无机或无机/有机复合膜的方法 | |
KR101622816B1 (ko) | 기능성 필름의 제조 방법 | |
JP2012096432A (ja) | バリアフィルム及びその製造方法 | |
US20050172897A1 (en) | Barrier layer process and arrangement | |
JP2016529397A (ja) | シートのコーティング方法 | |
KR20120021279A (ko) | 기능성 필름 및 기능성 필름의 제조 방법 | |
CN104114361A (zh) | 功能性膜的制造方法及功能性膜 | |
TW201625412A (zh) | 氣體障壁性層合薄膜以及其製造方法 | |
JP6524702B2 (ja) | ガスバリア性フィルムの製造方法及びガスバリア性フィルム | |
JP2012096431A (ja) | バリアフィルム及びその製造方法 | |
JP4506365B2 (ja) | バリアフィルムの製造方法 | |
JP2016532774A (ja) | フィルムのロール加工 | |
JP6554810B2 (ja) | 積層体及びその製造方法、並びにガスバリアフィルム | |
JP2016074927A (ja) | 成膜装置及び成膜方法 | |
JP2021102791A (ja) | 蒸着装置及び蒸着膜を形成した基材の製造方法 | |
JP2001295026A (ja) | 撥水性の物品および撥水性の薄膜の被覆方法 | |
JP2018108643A (ja) | フィルム積層体、その製造方法及び成膜装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170714 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170714 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180814 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181107 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190305 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190603 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190903 |
|
A045 | Written measure of dismissal of application [lapsed due to lack of payment] |
Free format text: JAPANESE INTERMEDIATE CODE: A045 Effective date: 20200128 |