JP2016525276A5 - - Google Patents

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JP2016525276A5
JP2016525276A5 JP2016522294A JP2016522294A JP2016525276A5 JP 2016525276 A5 JP2016525276 A5 JP 2016525276A5 JP 2016522294 A JP2016522294 A JP 2016522294A JP 2016522294 A JP2016522294 A JP 2016522294A JP 2016525276 A5 JP2016525276 A5 JP 2016525276A5
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silicon substrate
temperature
hydrogen
cooling
containing layer
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JP2016522294A
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JP6266768B2 (ja
JP2016525276A (ja
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Priority claimed from PCT/EP2013/070104 external-priority patent/WO2014206504A1/de
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JP2016522294A 2013-06-26 2013-09-26 効率が安定した光起電力素子の製造方法および製造装置 Active JP6266768B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013010575.7 2013-06-26
DE102013010575 2013-06-26
PCT/EP2013/070104 WO2014206504A1 (de) 2013-06-26 2013-09-26 Verfahren und vorrichtung zum herstellen eines photovoltaikelements mit stabilisiertem wirkungsgrad

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JP2016525276A JP2016525276A (ja) 2016-08-22
JP2016525276A5 true JP2016525276A5 (cg-RX-API-DMAC7.html) 2016-10-13
JP6266768B2 JP6266768B2 (ja) 2018-01-24

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JP2016522294A Active JP6266768B2 (ja) 2013-06-26 2013-09-26 効率が安定した光起電力素子の製造方法および製造装置

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US (2) US10892376B2 (cg-RX-API-DMAC7.html)
EP (1) EP3014663B1 (cg-RX-API-DMAC7.html)
JP (1) JP6266768B2 (cg-RX-API-DMAC7.html)
KR (1) KR101807381B1 (cg-RX-API-DMAC7.html)
CN (1) CN105340085B (cg-RX-API-DMAC7.html)
DE (2) DE202013012849U1 (cg-RX-API-DMAC7.html)
ES (1) ES2830766T3 (cg-RX-API-DMAC7.html)
MY (1) MY182430A (cg-RX-API-DMAC7.html)
SG (1) SG11201510423YA (cg-RX-API-DMAC7.html)
WO (1) WO2014206504A1 (cg-RX-API-DMAC7.html)

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DE102015114240A1 (de) * 2015-08-27 2017-03-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Bearbeitung eines Halbleitersubstrats mittels Laserstrahlung
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CN108604619A (zh) * 2016-02-22 2018-09-28 应用材料意大利有限公司 用于处理太阳能电池基板的设备、用于处理太阳能电池基板的系统和用于处理太阳能电池基板的方法
FR3051074B1 (fr) * 2016-05-03 2018-05-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'une cellule photovoltaique a heterojonction
WO2017210731A1 (en) * 2016-06-06 2017-12-14 Newsouth Innovations Pty Limited A method for processing silicon material
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WO2018094462A1 (en) * 2016-11-22 2018-05-31 Newsouth Innovations Pty Limited Advanced hydrogen passivation that mitigates hydrogen-induced recombination (hir) and surface passivation deterioration in pv devices
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US20220262973A1 (en) * 2018-07-30 2022-08-18 mPower Technology, Inc. In-situ rapid annealing and operation of solar cells for extreme environment applications
DE102019102227A1 (de) 2019-01-29 2019-11-14 Universität Konstanz Vorrichtung zum Messen einer Strahlungsintensität insbesondere in einem Durchlaufofen
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DE102020002335B4 (de) 2020-04-17 2022-02-24 Ce Cell Engineering Gmbh Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Silizumsolarzelle
CN112599609B (zh) * 2020-12-15 2022-07-08 山东力诺阳光电力科技有限公司 一种高效晶体硅太阳能电池及其制备方法
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