JP2016522567A5 - - Google Patents

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Publication number
JP2016522567A5
JP2016522567A5 JP2016506614A JP2016506614A JP2016522567A5 JP 2016522567 A5 JP2016522567 A5 JP 2016522567A5 JP 2016506614 A JP2016506614 A JP 2016506614A JP 2016506614 A JP2016506614 A JP 2016506614A JP 2016522567 A5 JP2016522567 A5 JP 2016522567A5
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JP
Japan
Prior art keywords
gas
dopant
gas mixture
sccm
oxygen
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JP2016506614A
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English (en)
Japanese (ja)
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JP2016522567A (ja
JP6068727B2 (ja
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Priority claimed from PCT/US2014/032814 external-priority patent/WO2014165669A2/en
Publication of JP2016522567A publication Critical patent/JP2016522567A/ja
Publication of JP2016522567A5 publication Critical patent/JP2016522567A5/ja
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JP2016506614A 2013-04-04 2014-04-03 パルス状気体プラズマドーピング方法及び装置 Active JP6068727B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361808321P 2013-04-04 2013-04-04
US61/808,321 2013-04-04
PCT/US2014/032814 WO2014165669A2 (en) 2013-04-04 2014-04-03 Pulsed gas plasma doping method and apparatus

Publications (3)

Publication Number Publication Date
JP2016522567A JP2016522567A (ja) 2016-07-28
JP2016522567A5 true JP2016522567A5 (enExample) 2017-01-12
JP6068727B2 JP6068727B2 (ja) 2017-01-25

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ID=51654732

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JP2016506614A Active JP6068727B2 (ja) 2013-04-04 2014-04-03 パルス状気体プラズマドーピング方法及び装置

Country Status (5)

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US (1) US9165771B2 (enExample)
JP (1) JP6068727B2 (enExample)
KR (1) KR101815746B1 (enExample)
TW (1) TWI541868B (enExample)
WO (1) WO2014165669A2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6499835B2 (ja) * 2014-07-24 2019-04-10 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2016122769A (ja) * 2014-12-25 2016-07-07 東京エレクトロン株式会社 ドーピング方法および半導体素子の製造方法
DE102015102055A1 (de) * 2015-01-16 2016-07-21 Infineon Technologies Ag Verfahren zum Bearbeiten einer Halbleiteroberfläche
JP6545053B2 (ja) * 2015-03-30 2019-07-17 東京エレクトロン株式会社 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
JP2016225356A (ja) * 2015-05-27 2016-12-28 東京エレクトロン株式会社 半導体素子の製造方法
US10256075B2 (en) * 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
KR20180132800A (ko) * 2016-04-05 2018-12-12 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 작업물 내로 프로세싱 종을 주입하는 방법 및 작업물 내로 도펀트를 주입하는 방법, 및 작업물을 프로세싱하기 위한 장치
CN106098543B (zh) * 2016-06-13 2019-05-14 北京大学 一种在室温环境下向硅材料中引入固态杂质的方法
CN105931951B (zh) * 2016-06-13 2019-05-14 北京大学 一种在室温环境下向砷化镓材料引入杂质的方法
FR3057704B1 (fr) * 2016-10-13 2019-05-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'un semi-conducteur dope n avec du phosphore ou de l'arsenic permettant des resistances carrees optimisees
US11772058B2 (en) 2019-10-18 2023-10-03 Taiwan Semiconductor Manufacturing Company Limited Gas mixing system for semiconductor fabrication
US11315790B2 (en) * 2019-10-22 2022-04-26 Applied Materials, Inc. Enhanced substrate amorphization using intermittent ion exposure
FI129609B (en) 2020-01-10 2022-05-31 Picosun Oy Substrate processing apparatus
KR20210123128A (ko) * 2020-04-02 2021-10-13 삼성전자주식회사 반도체 장치의 제조에 사용되는 장치
CN117276410B (zh) * 2023-11-17 2024-03-29 浙江晶科能源有限公司 钝化接触太阳能电池及其制备方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010054601A1 (en) 1996-05-13 2001-12-27 Jian Ding Low ceiling temperature process for a plasma reactor with heated source of a polymer-hardening precursor material
JP2000294538A (ja) * 1999-04-01 2000-10-20 Matsushita Electric Ind Co Ltd 真空処理装置
US6383954B1 (en) * 1999-07-27 2002-05-07 Applied Materials, Inc. Process gas distribution for forming stable fluorine-doped silicate glass and other films
WO2002008487A1 (en) 2000-07-24 2002-01-31 The University Of Maryland, College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
JP2002184710A (ja) 2000-12-18 2002-06-28 Sony Corp 半導体層のドーピング方法、薄膜半導体素子の製造方法、及び薄膜半導体素子
US6534871B2 (en) * 2001-05-14 2003-03-18 Sharp Laboratories Of America, Inc. Device including an epitaxial nickel silicide on (100) Si or stable nickel silicide on amorphous Si and a method of fabricating the same
US7205240B2 (en) 2003-06-04 2007-04-17 Applied Materials, Inc. HDP-CVD multistep gapfill process
US20050221020A1 (en) 2004-03-30 2005-10-06 Tokyo Electron Limited Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film
US20070066038A1 (en) 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
TWI423308B (zh) * 2005-09-01 2014-01-11 松下電器產業股份有限公司 A plasma processing apparatus, a plasma processing method, and a dielectric window for use therefor and a method of manufacturing the same
US7932181B2 (en) 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
US7790586B2 (en) 2006-11-15 2010-09-07 Panasonic Corporation Plasma doping method
US7820533B2 (en) 2007-02-16 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Multi-step plasma doping with improved dose control
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
WO2009057583A1 (ja) * 2007-10-31 2009-05-07 Tohoku University プラズマ処理システム及びプラズマ処理方法
US7972968B2 (en) 2008-08-18 2011-07-05 Applied Materials, Inc. High density plasma gapfill deposition-etch-deposition process etchant
CN102272905B (zh) * 2009-02-12 2014-01-29 松下电器产业株式会社 半导体装置及其制造方法
WO2011080876A1 (ja) * 2009-12-28 2011-07-07 パナソニック株式会社 プラズマドーピング装置
US8513107B2 (en) * 2010-01-26 2013-08-20 Taiwan Semiconductor Manufacturing Co., Ltd. Replacement gate FinFET devices and methods for forming the same
TW201205648A (en) * 2010-06-23 2012-02-01 Tokyo Electron Ltd Plasma doping device, plasma doping method, method for manufacturing semiconductor element, and semiconductor element
US8003503B1 (en) 2010-09-30 2011-08-23 Tokyo Electron Limited Method of integrating stress into a gate stack
US8133349B1 (en) 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
US9277637B2 (en) 2010-11-17 2016-03-01 Tokyo Electron Limited Apparatus for plasma treatment and method for plasma treatment
US8435845B2 (en) * 2011-04-06 2013-05-07 International Business Machines Corporation Junction field effect transistor with an epitaxially grown gate structure
JP2013026345A (ja) * 2011-07-19 2013-02-04 Toshiba Corp 半導体装置の製造方法

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