TWI541868B - 脈衝氣體電漿摻雜方法及設備 - Google Patents
脈衝氣體電漿摻雜方法及設備 Download PDFInfo
- Publication number
- TWI541868B TWI541868B TW103112594A TW103112594A TWI541868B TW I541868 B TWI541868 B TW I541868B TW 103112594 A TW103112594 A TW 103112594A TW 103112594 A TW103112594 A TW 103112594A TW I541868 B TWI541868 B TW I541868B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- substrate
- plasma
- dopant
- gas mixture
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 63
- 239000007789 gas Substances 0.000 claims description 147
- 239000002019 doping agent Substances 0.000 claims description 123
- 239000000758 substrate Substances 0.000 claims description 83
- 239000000203 mixture Substances 0.000 claims description 60
- 238000002347 injection Methods 0.000 claims description 59
- 239000007924 injection Substances 0.000 claims description 59
- 238000012545 processing Methods 0.000 claims description 53
- 238000000137 annealing Methods 0.000 claims description 31
- 229910052734 helium Inorganic materials 0.000 claims description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 239000001307 helium Substances 0.000 claims description 22
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 20
- 239000011261 inert gas Substances 0.000 claims description 17
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 7
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims 14
- 238000010791 quenching Methods 0.000 claims 1
- 230000000171 quenching effect Effects 0.000 claims 1
- 230000008569 process Effects 0.000 description 31
- 235000012431 wafers Nutrition 0.000 description 29
- 150000002500 ions Chemical class 0.000 description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 27
- 239000001301 oxygen Substances 0.000 description 27
- 229910052760 oxygen Inorganic materials 0.000 description 27
- 239000010410 layer Substances 0.000 description 22
- 241000894007 species Species 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 13
- 230000004907 flux Effects 0.000 description 13
- 238000011282 treatment Methods 0.000 description 12
- 230000008901 benefit Effects 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 230000008021 deposition Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- -1 B 10 H x Chemical class 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000005280 amorphization Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 241001522301 Apogonichthyoides nigripinnis Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
- H10D30/0241—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] doping of vertical sidewalls, e.g. using tilted or multi-angled implants
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361808321P | 2013-04-04 | 2013-04-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201511095A TW201511095A (zh) | 2015-03-16 |
| TWI541868B true TWI541868B (zh) | 2016-07-11 |
Family
ID=51654732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103112594A TWI541868B (zh) | 2013-04-04 | 2014-04-03 | 脈衝氣體電漿摻雜方法及設備 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9165771B2 (enExample) |
| JP (1) | JP6068727B2 (enExample) |
| KR (1) | KR101815746B1 (enExample) |
| TW (1) | TWI541868B (enExample) |
| WO (1) | WO2014165669A2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6499835B2 (ja) * | 2014-07-24 | 2019-04-10 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP2016122769A (ja) * | 2014-12-25 | 2016-07-07 | 東京エレクトロン株式会社 | ドーピング方法および半導体素子の製造方法 |
| DE102015102055A1 (de) * | 2015-01-16 | 2016-07-21 | Infineon Technologies Ag | Verfahren zum Bearbeiten einer Halbleiteroberfläche |
| JP6545053B2 (ja) * | 2015-03-30 | 2019-07-17 | 東京エレクトロン株式会社 | 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法 |
| JP2016225356A (ja) * | 2015-05-27 | 2016-12-28 | 東京エレクトロン株式会社 | 半導体素子の製造方法 |
| US10256075B2 (en) * | 2016-01-22 | 2019-04-09 | Applied Materials, Inc. | Gas splitting by time average injection into different zones by fast gas valves |
| WO2017176255A1 (en) * | 2016-04-05 | 2017-10-12 | Varian Semiconductor Equipment Associates, Inc. | Boron implanting using a co-gas |
| CN106098543B (zh) * | 2016-06-13 | 2019-05-14 | 北京大学 | 一种在室温环境下向硅材料中引入固态杂质的方法 |
| CN105931951B (zh) * | 2016-06-13 | 2019-05-14 | 北京大学 | 一种在室温环境下向砷化镓材料引入杂质的方法 |
| FR3057704B1 (fr) * | 2016-10-13 | 2019-05-24 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un semi-conducteur dope n avec du phosphore ou de l'arsenic permettant des resistances carrees optimisees |
| US11772058B2 (en) | 2019-10-18 | 2023-10-03 | Taiwan Semiconductor Manufacturing Company Limited | Gas mixing system for semiconductor fabrication |
| US11315790B2 (en) * | 2019-10-22 | 2022-04-26 | Applied Materials, Inc. | Enhanced substrate amorphization using intermittent ion exposure |
| FI129609B (en) | 2020-01-10 | 2022-05-31 | Picosun Oy | Substrate processing apparatus |
| KR20210123128A (ko) * | 2020-04-02 | 2021-10-13 | 삼성전자주식회사 | 반도체 장치의 제조에 사용되는 장치 |
| CN117276410B (zh) * | 2023-11-17 | 2024-03-29 | 浙江晶科能源有限公司 | 钝化接触太阳能电池及其制备方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010054601A1 (en) * | 1996-05-13 | 2001-12-27 | Jian Ding | Low ceiling temperature process for a plasma reactor with heated source of a polymer-hardening precursor material |
| JP2000294538A (ja) * | 1999-04-01 | 2000-10-20 | Matsushita Electric Ind Co Ltd | 真空処理装置 |
| US6383954B1 (en) | 1999-07-27 | 2002-05-07 | Applied Materials, Inc. | Process gas distribution for forming stable fluorine-doped silicate glass and other films |
| WO2002008487A1 (en) | 2000-07-24 | 2002-01-31 | The University Of Maryland, College Park | Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation |
| JP2002184710A (ja) * | 2000-12-18 | 2002-06-28 | Sony Corp | 半導体層のドーピング方法、薄膜半導体素子の製造方法、及び薄膜半導体素子 |
| US6534871B2 (en) * | 2001-05-14 | 2003-03-18 | Sharp Laboratories Of America, Inc. | Device including an epitaxial nickel silicide on (100) Si or stable nickel silicide on amorphous Si and a method of fabricating the same |
| US7205240B2 (en) * | 2003-06-04 | 2007-04-17 | Applied Materials, Inc. | HDP-CVD multistep gapfill process |
| US20050221020A1 (en) | 2004-03-30 | 2005-10-06 | Tokyo Electron Limited | Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film |
| US20070066038A1 (en) | 2004-04-30 | 2007-03-22 | Lam Research Corporation | Fast gas switching plasma processing apparatus |
| CN101258786B (zh) * | 2005-09-01 | 2012-08-29 | 松下电器产业株式会社 | 等离子体处理设备 |
| US7932181B2 (en) | 2006-06-20 | 2011-04-26 | Lam Research Corporation | Edge gas injection for critical dimension uniformity improvement |
| WO2008059827A1 (en) | 2006-11-15 | 2008-05-22 | Panasonic Corporation | Plasma doping method |
| US7820533B2 (en) | 2007-02-16 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Multi-step plasma doping with improved dose control |
| US7939447B2 (en) * | 2007-10-26 | 2011-05-10 | Asm America, Inc. | Inhibitors for selective deposition of silicon containing films |
| WO2009057583A1 (ja) * | 2007-10-31 | 2009-05-07 | Tohoku University | プラズマ処理システム及びプラズマ処理方法 |
| US7972968B2 (en) | 2008-08-18 | 2011-07-05 | Applied Materials, Inc. | High density plasma gapfill deposition-etch-deposition process etchant |
| CN102272905B (zh) * | 2009-02-12 | 2014-01-29 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
| WO2011080876A1 (ja) * | 2009-12-28 | 2011-07-07 | パナソニック株式会社 | プラズマドーピング装置 |
| US8513107B2 (en) | 2010-01-26 | 2013-08-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Replacement gate FinFET devices and methods for forming the same |
| JP2013534712A (ja) | 2010-06-23 | 2013-09-05 | 東京エレクトロン株式会社 | プラズマドーピング装置、プラズマドーピング方法、半導体素子の製造方法、および半導体素子 |
| US8003503B1 (en) * | 2010-09-30 | 2011-08-23 | Tokyo Electron Limited | Method of integrating stress into a gate stack |
| US8133349B1 (en) | 2010-11-03 | 2012-03-13 | Lam Research Corporation | Rapid and uniform gas switching for a plasma etch process |
| KR101910678B1 (ko) * | 2010-11-17 | 2018-10-22 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
| US8435845B2 (en) * | 2011-04-06 | 2013-05-07 | International Business Machines Corporation | Junction field effect transistor with an epitaxially grown gate structure |
| JP2013026345A (ja) * | 2011-07-19 | 2013-02-04 | Toshiba Corp | 半導体装置の製造方法 |
-
2014
- 2014-04-03 KR KR1020157031579A patent/KR101815746B1/ko active Active
- 2014-04-03 TW TW103112594A patent/TWI541868B/zh active
- 2014-04-03 JP JP2016506614A patent/JP6068727B2/ja active Active
- 2014-04-03 WO PCT/US2014/032814 patent/WO2014165669A2/en not_active Ceased
- 2014-04-03 US US14/244,481 patent/US9165771B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US9165771B2 (en) | 2015-10-20 |
| JP2016522567A (ja) | 2016-07-28 |
| KR20150138369A (ko) | 2015-12-09 |
| TW201511095A (zh) | 2015-03-16 |
| WO2014165669A2 (en) | 2014-10-09 |
| US20140302666A1 (en) | 2014-10-09 |
| WO2014165669A3 (en) | 2015-11-12 |
| KR101815746B1 (ko) | 2018-01-30 |
| JP6068727B2 (ja) | 2017-01-25 |
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