TWI541868B - 脈衝氣體電漿摻雜方法及設備 - Google Patents

脈衝氣體電漿摻雜方法及設備 Download PDF

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Publication number
TWI541868B
TWI541868B TW103112594A TW103112594A TWI541868B TW I541868 B TWI541868 B TW I541868B TW 103112594 A TW103112594 A TW 103112594A TW 103112594 A TW103112594 A TW 103112594A TW I541868 B TWI541868 B TW I541868B
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TW
Taiwan
Prior art keywords
gas
substrate
plasma
dopant
gas mixture
Prior art date
Application number
TW103112594A
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English (en)
Chinese (zh)
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TW201511095A (zh
Inventor
彼得Ｌ 凡特薩克
根本隆尙
上田博一
小林裕樹
堀籠正弘
Original Assignee
東京威力科創股份有限公司
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Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201511095A publication Critical patent/TW201511095A/zh
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Publication of TWI541868B publication Critical patent/TWI541868B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0241—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] doping of vertical sidewalls, e.g. using tilted or multi-angled implants

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW103112594A 2013-04-04 2014-04-03 脈衝氣體電漿摻雜方法及設備 TWI541868B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201361808321P 2013-04-04 2013-04-04

Publications (2)

Publication Number Publication Date
TW201511095A TW201511095A (zh) 2015-03-16
TWI541868B true TWI541868B (zh) 2016-07-11

Family

ID=51654732

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103112594A TWI541868B (zh) 2013-04-04 2014-04-03 脈衝氣體電漿摻雜方法及設備

Country Status (5)

Country Link
US (1) US9165771B2 (enExample)
JP (1) JP6068727B2 (enExample)
KR (1) KR101815746B1 (enExample)
TW (1) TWI541868B (enExample)
WO (1) WO2014165669A2 (enExample)

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JP2016225356A (ja) * 2015-05-27 2016-12-28 東京エレクトロン株式会社 半導体素子の製造方法
US10256075B2 (en) * 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
CN109075041B (zh) * 2016-04-05 2022-12-06 瓦里安半导体设备公司 将加工物质与掺杂剂植入工件的方法及用于工件的设备
CN105931951B (zh) * 2016-06-13 2019-05-14 北京大学 一种在室温环境下向砷化镓材料引入杂质的方法
CN106098543B (zh) * 2016-06-13 2019-05-14 北京大学 一种在室温环境下向硅材料中引入固态杂质的方法
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CN117276410B (zh) * 2023-11-17 2024-03-29 浙江晶科能源有限公司 钝化接触太阳能电池及其制备方法
WO2026122088A1 (en) * 2024-12-04 2026-06-11 Applied Materials, Inc. A flow delivery system for a processing chamber

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Also Published As

Publication number Publication date
JP2016522567A (ja) 2016-07-28
US9165771B2 (en) 2015-10-20
WO2014165669A2 (en) 2014-10-09
KR20150138369A (ko) 2015-12-09
TW201511095A (zh) 2015-03-16
KR101815746B1 (ko) 2018-01-30
WO2014165669A3 (en) 2015-11-12
US20140302666A1 (en) 2014-10-09
JP6068727B2 (ja) 2017-01-25

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