KR101815746B1 - 펄스화 가스 플라즈마 도핑 방법 및 장치 - Google Patents

펄스화 가스 플라즈마 도핑 방법 및 장치 Download PDF

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KR101815746B1
KR101815746B1 KR1020157031579A KR20157031579A KR101815746B1 KR 101815746 B1 KR101815746 B1 KR 101815746B1 KR 1020157031579 A KR1020157031579 A KR 1020157031579A KR 20157031579 A KR20157031579 A KR 20157031579A KR 101815746 B1 KR101815746 B1 KR 101815746B1
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substrate
dopant
gas
gas mixture
plasma
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KR20150138369A (ko
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피터 벤트젝
다케나오 네모토
히로카즈 우에다
유우키 고바야시
마사히로 호리고메
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H01L29/66803—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0241—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] doping of vertical sidewalls, e.g. using tilted or multi-angled implants

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020157031579A 2013-04-04 2014-04-03 펄스화 가스 플라즈마 도핑 방법 및 장치 Active KR101815746B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361808321P 2013-04-04 2013-04-04
US61/808,321 2013-04-04
PCT/US2014/032814 WO2014165669A2 (en) 2013-04-04 2014-04-03 Pulsed gas plasma doping method and apparatus

Publications (2)

Publication Number Publication Date
KR20150138369A KR20150138369A (ko) 2015-12-09
KR101815746B1 true KR101815746B1 (ko) 2018-01-30

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US (1) US9165771B2 (enExample)
JP (1) JP6068727B2 (enExample)
KR (1) KR101815746B1 (enExample)
TW (1) TWI541868B (enExample)
WO (1) WO2014165669A2 (enExample)

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JP6499835B2 (ja) * 2014-07-24 2019-04-10 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2016122769A (ja) * 2014-12-25 2016-07-07 東京エレクトロン株式会社 ドーピング方法および半導体素子の製造方法
DE102015102055A1 (de) * 2015-01-16 2016-07-21 Infineon Technologies Ag Verfahren zum Bearbeiten einer Halbleiteroberfläche
JP6545053B2 (ja) * 2015-03-30 2019-07-17 東京エレクトロン株式会社 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
JP2016225356A (ja) * 2015-05-27 2016-12-28 東京エレクトロン株式会社 半導体素子の製造方法
US10256075B2 (en) * 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
WO2017176255A1 (en) * 2016-04-05 2017-10-12 Varian Semiconductor Equipment Associates, Inc. Boron implanting using a co-gas
CN106098543B (zh) * 2016-06-13 2019-05-14 北京大学 一种在室温环境下向硅材料中引入固态杂质的方法
CN105931951B (zh) * 2016-06-13 2019-05-14 北京大学 一种在室温环境下向砷化镓材料引入杂质的方法
FR3057704B1 (fr) * 2016-10-13 2019-05-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'un semi-conducteur dope n avec du phosphore ou de l'arsenic permettant des resistances carrees optimisees
US11772058B2 (en) 2019-10-18 2023-10-03 Taiwan Semiconductor Manufacturing Company Limited Gas mixing system for semiconductor fabrication
US11315790B2 (en) * 2019-10-22 2022-04-26 Applied Materials, Inc. Enhanced substrate amorphization using intermittent ion exposure
FI129609B (en) 2020-01-10 2022-05-31 Picosun Oy Substrate processing apparatus
KR20210123128A (ko) * 2020-04-02 2021-10-13 삼성전자주식회사 반도체 장치의 제조에 사용되는 장치
CN117276410B (zh) * 2023-11-17 2024-03-29 浙江晶科能源有限公司 钝化接触太阳能电池及其制备方法

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US20090233427A1 (en) 2006-11-15 2009-09-17 Yuichiro Sasaki Plasma doping method
US20110272763A1 (en) 2009-02-12 2011-11-10 Yuichiro Sasaki Semiconductor device and method for fabricating the same
WO2012066779A1 (en) 2010-11-17 2012-05-24 Tokyo Electron Limited Apparatus for plasma treatment and method for plasma treatment

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US20090233427A1 (en) 2006-11-15 2009-09-17 Yuichiro Sasaki Plasma doping method
US20110272763A1 (en) 2009-02-12 2011-11-10 Yuichiro Sasaki Semiconductor device and method for fabricating the same
WO2012066779A1 (en) 2010-11-17 2012-05-24 Tokyo Electron Limited Apparatus for plasma treatment and method for plasma treatment

Also Published As

Publication number Publication date
US9165771B2 (en) 2015-10-20
JP2016522567A (ja) 2016-07-28
KR20150138369A (ko) 2015-12-09
TW201511095A (zh) 2015-03-16
TWI541868B (zh) 2016-07-11
WO2014165669A2 (en) 2014-10-09
US20140302666A1 (en) 2014-10-09
WO2014165669A3 (en) 2015-11-12
JP6068727B2 (ja) 2017-01-25

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