JP2016519423A5 - - Google Patents

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Publication number
JP2016519423A5
JP2016519423A5 JP2016501882A JP2016501882A JP2016519423A5 JP 2016519423 A5 JP2016519423 A5 JP 2016519423A5 JP 2016501882 A JP2016501882 A JP 2016501882A JP 2016501882 A JP2016501882 A JP 2016501882A JP 2016519423 A5 JP2016519423 A5 JP 2016519423A5
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Japan
Prior art keywords
acid
cleaning composition
aqueous cleaning
concentration
amino
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JP2016501882A
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English (en)
Japanese (ja)
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JP2016519423A (ja
JP6751015B2 (ja
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Priority claimed from PCT/US2014/025563 external-priority patent/WO2014151361A1/en
Publication of JP2016519423A publication Critical patent/JP2016519423A/ja
Publication of JP2016519423A5 publication Critical patent/JP2016519423A5/ja
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JP2016501882A 2013-03-15 2014-03-13 銅の化学的機械的平坦化後のための水性清浄化組成物 Active JP6751015B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361793073P 2013-03-15 2013-03-15
US61/793,073 2013-03-15
PCT/US2014/025563 WO2014151361A1 (en) 2013-03-15 2014-03-13 Aqueous cleaning composition for post copper chemical mechanical planarization

Publications (3)

Publication Number Publication Date
JP2016519423A JP2016519423A (ja) 2016-06-30
JP2016519423A5 true JP2016519423A5 (enExample) 2019-01-31
JP6751015B2 JP6751015B2 (ja) 2020-09-02

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JP2016501882A Active JP6751015B2 (ja) 2013-03-15 2014-03-13 銅の化学的機械的平坦化後のための水性清浄化組成物

Country Status (7)

Country Link
US (1) US20140264151A1 (enExample)
EP (1) EP2971248B1 (enExample)
JP (1) JP6751015B2 (enExample)
KR (1) KR102237745B1 (enExample)
CN (1) CN105264117B (enExample)
TW (1) TWI515339B (enExample)
WO (1) WO2014151361A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3169765B1 (en) * 2014-07-18 2020-08-19 Cabot Microelectronics Corporation Cleaning composition following cmp and methods related thereto
JP6599464B2 (ja) * 2015-01-05 2019-10-30 インテグリス・インコーポレーテッド 化学機械研磨後製剤および使用方法
US9490142B2 (en) * 2015-04-09 2016-11-08 Qualsig Inc. Cu-low K cleaning and protection compositions
US20160304815A1 (en) * 2015-04-20 2016-10-20 Intermolecular, Inc. Methods and chemical solutions for cleaning photomasks using quaternary ammonium hydroxides
KR102207306B1 (ko) * 2016-11-25 2021-01-22 엔테그리스, 아이엔씨. 에칭 후 잔류물을 제거하기 위한 세정 조성물
KR20210090294A (ko) * 2017-01-18 2021-07-19 엔테그리스, 아이엔씨. 표면으로부터 세리아 입자를 제거하기 위한 조성물 및 방법
TWI703210B (zh) * 2017-04-11 2020-09-01 美商恩特葛瑞斯股份有限公司 化學機械研磨後調配物及使用方法
US11446708B2 (en) * 2017-12-04 2022-09-20 Entegris, Inc. Compositions and methods for reducing interaction between abrasive particles and a cleaning brush
WO2020117269A1 (en) * 2018-12-07 2020-06-11 Halliburton Energy Services, Inc. Controlling the formation of polymer-metal complexes in wellbore operations
JP7544027B2 (ja) * 2019-02-19 2024-09-03 三菱ケミカル株式会社 セリウム化合物除去用洗浄液、洗浄方法及び半導体ウェハの製造方法
KR102707360B1 (ko) 2019-12-26 2024-09-20 후지필름 가부시키가이샤 세정액, 세정 방법
WO2021131451A1 (ja) * 2019-12-26 2021-07-01 富士フイルムエレクトロニクスマテリアルズ株式会社 洗浄方法、洗浄液
US11584900B2 (en) 2020-05-14 2023-02-21 Corrosion Innovations, Llc Method for removing one or more of: coating, corrosion, salt from a surface
CN112663065A (zh) * 2020-11-24 2021-04-16 苏州美源达环保科技股份有限公司 一种碱性蚀刻液的再生循环利用方法
CN113774390B (zh) * 2021-08-12 2023-08-04 上海新阳半导体材料股份有限公司 一种用于化学机械抛光后的清洗液及其制备方法
JP7756561B2 (ja) 2021-12-28 2025-10-20 東京応化工業株式会社 洗浄液、及び基板の洗浄方法
WO2024233995A1 (en) * 2023-05-11 2024-11-14 Cci North America Corporation Pre-treated ion exchange resin for alternative energy power source heat transfer systems with low conductivity coolant requirements
EP4720239A1 (en) * 2023-06-05 2026-04-08 Dow Global Technologies LLC Cleaning compositions with n-substituted piperazines

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2119722A1 (en) * 1993-03-17 1994-09-18 Edward A. Rodzewich Non-toxic organic corrosion inhibitor
US5733270A (en) * 1995-06-07 1998-03-31 Baxter International Inc. Method and device for precise release of an antimicrobial agent
US5716546A (en) * 1996-10-23 1998-02-10 Osram Sylvania Inc. Reduction of lag in yttrium tantalate x-ray phosphors
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US5756218A (en) * 1997-01-09 1998-05-26 Sandia Corporation Corrosion protective coating for metallic materials
KR20010094757A (ko) * 1999-02-05 2001-11-01 리씨 알렉산더 디., 조이스 엘. 모리슨 세정제 조성물 및 그 사용 방법
US6492308B1 (en) * 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US20100009540A1 (en) * 2002-09-25 2010-01-14 Asahi Glass Company Limited Polishing compound, its production process and polishing method
KR20060015723A (ko) * 2003-05-09 2006-02-20 산요가세이고교 가부시키가이샤 씨엠피 프로세스용 연마액 및 연마방법
US7968465B2 (en) * 2003-08-14 2011-06-28 Dupont Air Products Nanomaterials Llc Periodic acid compositions for polishing ruthenium/low K substrates
US7241725B2 (en) * 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
US20050170650A1 (en) * 2004-01-26 2005-08-04 Hongbin Fang Electroless palladium nitrate activation prior to cobalt-alloy deposition
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
US20090011972A1 (en) * 2004-12-28 2009-01-08 Sanyo Chemical Industries, Ltd. Surfactant for Fine-Bubble Formation
TWI282363B (en) 2005-05-19 2007-06-11 Epoch Material Co Ltd Aqueous cleaning composition for semiconductor copper processing
US7374592B2 (en) * 2005-12-15 2008-05-20 Ashland Licensing And Intellectual Property, Llc (Alip) Cleaning and polishing composition for metallic surfaces
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
CN101410503A (zh) * 2006-03-27 2009-04-15 乔治洛德方法研究和开发液化空气有限公司 用于后cmp清洗工艺的改良碱性溶液
US7531431B2 (en) * 2006-05-19 2009-05-12 Cree, Inc. Methods for reducing contamination of semiconductor devices and materials during wafer processing
US7947637B2 (en) * 2006-06-30 2011-05-24 Fujifilm Electronic Materials, U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US20080241276A1 (en) * 2006-10-31 2008-10-02 The Procter & Gamble Company Portable bio-chemical decontaminant system and method of using the same
RU2448147C2 (ru) * 2006-12-13 2012-04-20 Хальдор Топсеэ А/С Способ синтеза углеводородных компонентов бензина
US8076155B2 (en) * 2007-06-05 2011-12-13 Ecolab Usa Inc. Wide range kinetic determination of peracid and/or peroxide concentrations
US8404626B2 (en) * 2007-12-21 2013-03-26 Lam Research Corporation Post-deposition cleaning methods and formulations for substrates with cap layers
US7919446B1 (en) * 2007-12-28 2011-04-05 Intermolecular, Inc. Post-CMP cleaning compositions and methods of using same
JP2009194049A (ja) * 2008-02-13 2009-08-27 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
JP2009212383A (ja) * 2008-03-05 2009-09-17 Sanyo Chem Ind Ltd 洗浄剤組成物及び半導体基板の製造方法
US20100006511A1 (en) * 2008-07-11 2010-01-14 Walterick Jr Gerald C Treatment additives and methods for treating an aqueous medium
KR101752684B1 (ko) * 2008-10-21 2017-07-04 엔테그리스, 아이엔씨. 구리 세척 및 보호 조성물
US8361237B2 (en) * 2008-12-17 2013-01-29 Air Products And Chemicals, Inc. Wet clean compositions for CoWP and porous dielectrics
WO2010104816A1 (en) * 2009-03-11 2010-09-16 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US8557125B2 (en) * 2010-06-07 2013-10-15 General Electric Company Treatment additives, methods for making and methods for clarifying aqueous media
US8969498B2 (en) * 2010-08-02 2015-03-03 Dow Global Technologies Llc Compositions and method of inhibiting polymerization of vinyl-aryl monomers
JPWO2012073909A1 (ja) * 2010-11-29 2014-05-19 和光純薬工業株式会社 銅配線用基板洗浄剤及び銅配線半導体基板の洗浄方法
US9714374B2 (en) * 2011-07-15 2017-07-25 Exxonmobil Upstream Research Company Protecting a fluid stream from fouling
CN103890114B (zh) * 2011-10-24 2015-08-26 福吉米株式会社 研磨用组合物、使用了其的研磨方法和基板的制造方法

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