JP2016518732A5 - - Google Patents

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Publication number
JP2016518732A5
JP2016518732A5 JP2016501316A JP2016501316A JP2016518732A5 JP 2016518732 A5 JP2016518732 A5 JP 2016518732A5 JP 2016501316 A JP2016501316 A JP 2016501316A JP 2016501316 A JP2016501316 A JP 2016501316A JP 2016518732 A5 JP2016518732 A5 JP 2016518732A5
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JP
Japan
Prior art keywords
voltage
nmos transistor
current
pmos transistor
common node
Prior art date
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Granted
Application number
JP2016501316A
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English (en)
Japanese (ja)
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JP2016518732A (ja
JP6419770B2 (ja
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Publication date
Priority claimed from US13/834,861 external-priority patent/US8766674B1/en
Application filed filed Critical
Publication of JP2016518732A publication Critical patent/JP2016518732A/ja
Publication of JP2016518732A5 publication Critical patent/JP2016518732A5/ja
Application granted granted Critical
Publication of JP6419770B2 publication Critical patent/JP6419770B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016501316A 2013-03-15 2014-03-11 高周波数クロックインターコネクトのための出力振幅検出器をもつ電流モードバッファ Expired - Fee Related JP6419770B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/834,861 US8766674B1 (en) 2013-03-15 2013-03-15 Current-mode buffer with output swing detector for high frequency clock interconnect
US13/834,861 2013-03-15
PCT/US2014/023684 WO2014150581A1 (en) 2013-03-15 2014-03-11 Current-mode buffer with output swing detector for high frequency clock interconnect

Publications (3)

Publication Number Publication Date
JP2016518732A JP2016518732A (ja) 2016-06-23
JP2016518732A5 true JP2016518732A5 (enExample) 2017-03-23
JP6419770B2 JP6419770B2 (ja) 2018-11-07

Family

ID=50434295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016501316A Expired - Fee Related JP6419770B2 (ja) 2013-03-15 2014-03-11 高周波数クロックインターコネクトのための出力振幅検出器をもつ電流モードバッファ

Country Status (6)

Country Link
US (1) US8766674B1 (enExample)
EP (1) EP2974020B1 (enExample)
JP (1) JP6419770B2 (enExample)
KR (1) KR20150131141A (enExample)
CN (1) CN105191128B (enExample)
WO (1) WO2014150581A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9985644B1 (en) * 2018-01-16 2018-05-29 Realtek Semiconductor Corp. Digital to-time converter and method therof
US10219339B1 (en) * 2018-02-19 2019-02-26 Ixys, Llc Current correction techniques for accurate high current short channel driver
US11482155B2 (en) * 2018-07-20 2022-10-25 Semiconductor Energy Laboratory Co., Ltd. Receiving circuit
FR3102581B1 (fr) * 2019-10-23 2021-10-22 St Microelectronics Rousset Régulateur de tension

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539489A (en) * 1983-06-22 1985-09-03 Motorola, Inc. CMOS Schmitt trigger circuit
US5459437A (en) * 1994-05-10 1995-10-17 Integrated Device Technology Logic gate with controllable hysteresis and high frequency voltage controlled oscillator
US5497127A (en) * 1994-12-14 1996-03-05 David Sarnoff Research Center, Inc. Wide frequency range CMOS relaxation oscillator with variable hysteresis
US5726596A (en) * 1996-03-01 1998-03-10 Hewlett-Packard Company High-performance, low-skew clocking scheme for single-phase, high-frequency global VLSI processor
US6323756B1 (en) * 1997-09-02 2001-11-27 Matsushita Electric Industrial Co., Ltd. Data transmitter
US5939937A (en) * 1997-09-29 1999-08-17 Siemens Aktiengesellschaft Constant current CMOS output driver circuit with dual gate transistor devices
JP3152204B2 (ja) * 1998-06-02 2001-04-03 日本電気株式会社 スルーレート出力回路
US6177819B1 (en) * 1999-04-01 2001-01-23 Xilinx, Inc. Integrated circuit driver with adjustable trip point
JP3520913B2 (ja) * 2000-06-09 2004-04-19 日本電気株式会社 信号線制御方式
US6316977B1 (en) * 2000-07-14 2001-11-13 Pmc-Sierra, Inc. Low charge-injection charge pump
US6356106B1 (en) * 2000-09-12 2002-03-12 Micron Technology, Inc. Active termination in a multidrop memory system
US7493149B1 (en) 2002-03-26 2009-02-17 National Semiconductor Corporation Method and system for minimizing power consumption in mobile devices using cooperative adaptive voltage and threshold scaling
JP4869569B2 (ja) 2004-06-23 2012-02-08 株式会社 日立ディスプレイズ 表示装置
KR100890041B1 (ko) * 2006-12-29 2009-03-25 주식회사 하이닉스반도체 반도체 소자의 클럭 버퍼 회로
US7502719B2 (en) 2007-01-25 2009-03-10 Monolithic Power Systems, Inc. Method and apparatus for overshoot and undershoot errors correction in analog low dropout regulators
US7652511B2 (en) * 2008-01-16 2010-01-26 Amazing Microelectronic Corp. Slew-rate control circuitry with output buffer and feedback
CN101540603A (zh) 2008-03-21 2009-09-23 意法半导体研发(上海)有限公司 用于高频信号的功效推挽式缓冲电路、系统和方法
US7902904B2 (en) * 2008-12-09 2011-03-08 Lsi Corporation Bias circuit scheme for improved reliability in high voltage supply with low voltage device
US8149023B2 (en) * 2009-10-21 2012-04-03 Qualcomm Incorporated RF buffer circuit with dynamic biasing
KR20110132864A (ko) 2010-06-03 2011-12-09 삼성전자주식회사 와이드 랜지 주파수 입력에 적합한 위상 보간 회로 및 그에 따른 출력 특성안정화 방법
JP5545751B2 (ja) * 2010-11-25 2014-07-09 三菱電機株式会社 ピークホールド回路及びボトムホールド回路
US8860469B1 (en) * 2012-07-13 2014-10-14 Altera Corporation Apparatus and methods for transmitter output swing calibration

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