JP2016516307A - 垂直スタックメモリにおいて欠陥深さを決定するための装置および方法 - Google Patents

垂直スタックメモリにおいて欠陥深さを決定するための装置および方法 Download PDF

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JP2016516307A
JP2016516307A JP2016506620A JP2016506620A JP2016516307A JP 2016516307 A JP2016516307 A JP 2016516307A JP 2016506620 A JP2016506620 A JP 2016506620A JP 2016506620 A JP2016506620 A JP 2016506620A JP 2016516307 A JP2016516307 A JP 2016516307A
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defect
focus
different depths
vertical stack
illumination
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JP2016516307A5 (enExample
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スティーブン アール ランゲ
スティーブン アール ランゲ
ロバート エム ダネン
ロバート エム ダネン
ステファノ パロンバ
ステファノ パロンバ
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N2021/178—Methods for obtaining spatial resolution of the property being measured
    • G01N2021/1785—Three dimensional
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features

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  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2016506620A 2013-04-03 2014-04-03 垂直スタックメモリにおいて欠陥深さを決定するための装置および方法 Pending JP2016516307A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361807753P 2013-04-03 2013-04-03
US61/807,753 2013-04-03
US14/226,745 US9696264B2 (en) 2013-04-03 2014-03-26 Apparatus and methods for determining defect depths in vertical stack memory
US14/226,745 2014-03-26
PCT/US2014/032842 WO2014165680A1 (en) 2013-04-03 2014-04-03 Apparatus and methods for determining defect depths in vertical stack memory

Related Child Applications (1)

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JP2019129253A Division JP2019208039A (ja) 2013-04-03 2019-07-11 垂直スタックメモリにおいて欠陥深さを決定するための方法及びシステム

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JP2016516307A true JP2016516307A (ja) 2016-06-02
JP2016516307A5 JP2016516307A5 (enExample) 2017-07-13

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JP2016506620A Pending JP2016516307A (ja) 2013-04-03 2014-04-03 垂直スタックメモリにおいて欠陥深さを決定するための装置および方法
JP2019129253A Pending JP2019208039A (ja) 2013-04-03 2019-07-11 垂直スタックメモリにおいて欠陥深さを決定するための方法及びシステム
JP2021168628A Active JP7273121B2 (ja) 2013-04-03 2021-10-14 垂直スタックメモリにおいて欠陥深さを決定するための方法及びシステム

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JP2019129253A Pending JP2019208039A (ja) 2013-04-03 2019-07-11 垂直スタックメモリにおいて欠陥深さを決定するための方法及びシステム
JP2021168628A Active JP7273121B2 (ja) 2013-04-03 2021-10-14 垂直スタックメモリにおいて欠陥深さを決定するための方法及びシステム

Country Status (5)

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US (1) US9696264B2 (enExample)
JP (3) JP2016516307A (enExample)
KR (1) KR102079419B1 (enExample)
TW (1) TWI603076B (enExample)
WO (1) WO2014165680A1 (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018075999A1 (en) * 2016-10-21 2018-04-26 Kla-Tencor Corporation Calibration of a small angle x-ray scatterometry based metrology system
KR20180077898A (ko) * 2016-12-29 2018-07-09 엘지디스플레이 주식회사 검사장치 및 이를 이용한 검사방법
KR20190098262A (ko) * 2017-01-10 2019-08-21 케이엘에이 코포레이션 심층적으로 적층된 층들을 갖는 웨이퍼들에서 결함 분류기를 트레이닝하고 적용하기 위한 시스템, 방법
JP2019525180A (ja) * 2016-08-05 2019-09-05 ケーエルエー−テンカー コーポレイション 大粒子監視及びレーザパワー制御を伴う表面欠陥検査
KR20190110146A (ko) * 2017-02-17 2019-09-27 케이엘에이 코포레이션 후막들 및 고 종횡비 구조물들의 측정을 위한 방법들 및 시스템들
JP2019168280A (ja) * 2018-03-22 2019-10-03 東レエンジニアリング株式会社 ボイド検査装置
JP2019535143A (ja) * 2016-10-07 2019-12-05 ケーエルエー コーポレイション 半導体ウェハ検査用三次元イメージング
JP2020501144A (ja) * 2016-12-07 2020-01-16 オルボテック リミテッド 欠陥良否判定方法及び装置
JP2020517096A (ja) * 2017-04-05 2020-06-11 ケーエルエー コーポレイション 層特定的照明スペクトルによる計量システム及び方法
KR20210048564A (ko) * 2018-09-19 2021-05-03 케이엘에이 코포레이션 매립된 결함의 특성화를 위한 시스템 및 방법
WO2022153763A1 (ja) * 2021-01-13 2022-07-21 株式会社デンソー 半導体基板の検査装置および検査方法
JP2023505437A (ja) * 2019-12-03 2023-02-09 ケーエルエー コーポレイション グレイ視野撮像装置及び方法
JP2023540747A (ja) * 2020-09-04 2023-09-26 ケーエルエー コーポレイション 三次元ウェハ構造向けビニング増強欠陥検出方法
US20230369090A1 (en) * 2022-05-10 2023-11-16 Sandisk Technologies Llc Optical measurement tool containing chromatic aberration enhancement component and optical alignment method using the same

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140122608A (ko) * 2013-04-10 2014-10-20 삼성전자주식회사 디펙의 깊이 정보 추출 장치 및 방법과 그 디펙의 깊이 정보를 이용한 반도체 공정 개선방법
US10083069B2 (en) * 2013-06-27 2018-09-25 Sandisk Technologies Llc Word line defect detection and handling for a data storage device
US9261358B2 (en) * 2014-07-03 2016-02-16 Align Technology, Inc. Chromatic confocal system
US9439568B2 (en) 2014-07-03 2016-09-13 Align Technology, Inc. Apparatus and method for measuring surface topography optically
US9599573B2 (en) * 2014-12-02 2017-03-21 Kla-Tencor Corporation Inspection systems and techniques with enhanced detection
WO2016145633A1 (zh) * 2015-03-18 2016-09-22 国立清华大学 高速三维成像之光学系统
KR20160115682A (ko) * 2015-03-25 2016-10-06 삼성전자주식회사 대상에 대하여 공간적으로 가변하는 오토 포커싱을 가능하게 하는 방법 및 이를 이용하는 촬상 시스템
US10495446B2 (en) * 2015-06-29 2019-12-03 Kla-Tencor Corporation Methods and apparatus for measuring height on a semiconductor wafer
US10295838B1 (en) * 2015-09-30 2019-05-21 Apple Inc. Body including surface having concentric annular portions
JP6574674B2 (ja) * 2015-10-15 2019-09-11 株式会社オプセル 塗装の検査装置及び検査方法
NL2017844A (en) * 2015-12-22 2017-06-28 Asml Netherlands Bv Focus control arrangement and method
TWI619937B (zh) * 2016-01-15 2018-04-01 奇美視像科技股份有限公司 以多光子激發技術檢查物體之方法以及量測物體之裝置
CN105842885B (zh) * 2016-03-21 2018-11-27 凌云光技术集团有限责任公司 一种液晶屏缺陷分层定位方法及装置
CN109563141A (zh) 2016-05-13 2019-04-02 奥里尼斯生物科学公司 对非细胞结构的治疗性靶向
EP3454887B1 (en) 2016-05-13 2021-01-20 Orionis Biosciences BV Targeted mutant interferon-beta and uses thereof
US10082470B2 (en) * 2016-09-27 2018-09-25 Kla-Tencor Corporation Defect marking for semiconductor wafer inspection
US11047806B2 (en) 2016-11-30 2021-06-29 Kla-Tencor Corporation Defect discovery and recipe optimization for inspection of three-dimensional semiconductor structures
US10928740B2 (en) * 2017-02-03 2021-02-23 Kla Corporation Three-dimensional calibration structures and methods for measuring buried defects on a three-dimensional semiconductor wafer
US11662646B2 (en) * 2017-02-05 2023-05-30 Kla Corporation Inspection and metrology using broadband infrared radiation
KR20180128647A (ko) * 2017-05-24 2018-12-04 삼성전자주식회사 광학 측정 방법 및 장치, 및 이를 이용한 반도체 장치의 제조 방법
KR102429614B1 (ko) 2017-06-08 2022-08-04 삼성전자주식회사 테스트 시스템, 테스트 방법 및 이들을 이용한 반도체 장치의 제조 방법
KR102368435B1 (ko) 2017-07-28 2022-03-02 삼성전자주식회사 기판 검사 장치, 기판 검사 방법 및 이를 이용한 반도체 소자의 제조 방법
US10739276B2 (en) 2017-11-03 2020-08-11 Kla-Tencor Corporation Minimizing filed size to reduce unwanted stray light
US10818005B2 (en) * 2018-03-12 2020-10-27 Kla-Tencor Corp. Previous layer nuisance reduction through oblique illumination
US10615067B2 (en) 2018-05-18 2020-04-07 Kla-Tencor Corporation Phase filter for enhanced defect detection in multilayer structure
JP7393364B2 (ja) * 2018-06-20 2023-12-06 プレシテク オプトロニク ゲゼルシャフト ミット ベシュレンクテル ハフツング 測定対象を光学的にクロマチック共焦点で測定し、かつ共焦点で結像させる装置及び方法
US11379967B2 (en) 2019-01-18 2022-07-05 Kla Corporation Methods and systems for inspection of semiconductor structures with automatically generated defect features
US10761032B1 (en) * 2019-02-26 2020-09-01 Bwxt Nuclear Operations Group, Inc. Apparatus and method for inspection of a film on a substrate
JP7305495B2 (ja) * 2019-09-18 2023-07-10 浜松ホトニクス株式会社 検査装置及び検査方法
JP7391583B2 (ja) 2019-09-18 2023-12-05 浜松ホトニクス株式会社 検査装置及び検査方法
CN110832631A (zh) * 2019-10-12 2020-02-21 长江存储科技有限责任公司 用于检测深度特征中的缺陷的方法
US11768431B2 (en) * 2019-12-31 2023-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fast surface particle and scratch detection for EUV mask backside
JP7511013B2 (ja) * 2020-02-12 2024-07-04 深▲セン▼華大智造科技股▲ふん▼有限公司 光学結像系及びそれを適用した生化物質検出系
KR102335304B1 (ko) 2020-04-29 2021-12-08 주식회사 신룡 전지용 검사장치
EP4211508B1 (en) * 2020-09-14 2025-11-26 Singular Genomics Systems, Inc. Methods and systems for multidimensional imaging
CN112255239B (zh) * 2020-10-22 2022-09-20 青岛歌尔声学科技有限公司 污染位置检测方法、装置、设备及计算机可读存储介质
US12487175B2 (en) 2021-02-08 2025-12-02 Kla Corporation Three-dimensional imaging with enhanced resolution
CN113241310B (zh) * 2021-05-28 2022-07-15 长江存储科技有限责任公司 晶圆缺陷的检测方法、检测装置、检测设备及可读存储介质
JP7717547B2 (ja) 2021-09-10 2025-08-04 株式会社東芝 生成装置、生成システム、処理システム、生成方法、プログラム、及び記憶媒体
US20240221149A1 (en) * 2022-12-30 2024-07-04 Kla Corporation Interface-based defect inspection using second harmonic generation
JPWO2024189664A1 (enExample) * 2023-03-10 2024-09-19
TWI872497B (zh) 2023-03-29 2025-02-11 財團法人工業技術研究院 樣本深度量測裝置與方法
TWI884618B (zh) 2023-12-06 2025-05-21 晶呈科技股份有限公司 晶圓缺陷分析裝置及晶圓缺陷分析方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6258143A (ja) * 1985-08-02 1987-03-13 アメリカン　テレフォン　アンド　テレグラフ　カムパニー 半導体材料の欠陥の光学的検出方法
JPH0424541A (ja) * 1990-05-21 1992-01-28 Mitsui Mining & Smelting Co Ltd 内部欠陥測定方法および装置
JPH10293102A (ja) * 1998-05-11 1998-11-04 Mitsui Mining & Smelting Co Ltd 半導体等における欠陥の検出方法
JP2000249529A (ja) * 1999-03-02 2000-09-14 Sony Corp 欠陥検査装置および欠陥検査方法
JP2001194321A (ja) * 2000-01-12 2001-07-19 Tokyo Seimitsu Co Ltd 半導体ウエハの検査装置
JP2005055196A (ja) * 2003-08-05 2005-03-03 Olympus Corp 基板検査方法及びその装置
US20050156098A1 (en) * 1999-03-23 2005-07-21 Fairley Christopher R. Confocal wafer inspection method and apparatus
JP2007506955A (ja) * 2003-09-25 2007-03-22 ライカ マイクロシステムス ツェーエムエス ゲーエムベーハー エバネッセント波照明を備えた走査顕微鏡
JP2010014439A (ja) * 2008-07-01 2010-01-21 Fujitsu Microelectronics Ltd 欠陥検査装置及び欠陥検査方法
US7659975B1 (en) * 2005-09-21 2010-02-09 Kla-Tencor Technologies Corp. Methods and systems for inspection of a wafer or setting up an inspection process
JP2010048730A (ja) * 2008-08-25 2010-03-04 Hitachi High-Technologies Corp 欠陥検査方法及びその装置

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3422143A1 (de) 1984-06-14 1985-12-19 Josef Prof. Dr. Bille Geraet zur wafer-inspektion
JPS63131116A (ja) * 1986-11-21 1988-06-03 Hitachi Ltd 共焦点顕微鏡
US5248876A (en) 1992-04-21 1993-09-28 International Business Machines Corporation Tandem linear scanning confocal imaging system with focal volumes at different heights
DE19713362A1 (de) 1997-03-29 1998-10-01 Zeiss Carl Jena Gmbh Konfokale mikroskopische Anordnung
US6172349B1 (en) * 1997-03-31 2001-01-09 Kla-Tencor Corporation Autofocusing apparatus and method for high resolution microscope system
US6256092B1 (en) * 1997-11-28 2001-07-03 Hitachi, Ltd. Defect inspection apparatus for silicon wafer
US6248988B1 (en) * 1998-05-05 2001-06-19 Kla-Tencor Corporation Conventional and confocal multi-spot scanning optical microscope
KR20010083041A (ko) * 1998-06-02 2001-08-31 추후 파수 도메인 반사측정과 배경 진폭 감소 및 보상을 사용한공초점 간섭 마이크로스코피용 방법 및 장치
US6548796B1 (en) * 1999-06-23 2003-04-15 Regents Of The University Of Minnesota Confocal macroscope
TW558642B (en) 1999-08-02 2003-10-21 Zetetic Inst Scanning interferometric near-field confocal microscopy
US6779159B2 (en) * 2001-06-08 2004-08-17 Sumitomo Mitsubishi Silicon Corporation Defect inspection method and defect inspection apparatus
US20040042001A1 (en) * 2002-04-18 2004-03-04 Kla-Tencor Technologies Corporation Simultaneous multi-spot inspection and imaging
JP4239166B2 (ja) * 2002-12-27 2009-03-18 関西ティー・エル・オー株式会社 多層観察型光学顕微鏡及び多層観察ユニット
US7324214B2 (en) 2003-03-06 2008-01-29 Zygo Corporation Interferometer and method for measuring characteristics of optically unresolved surface features
US9057705B2 (en) * 2003-07-28 2015-06-16 The Regents Of The University Of California Surface-enhanced raman spectroscopy substrate for arsenic sensing in groundwater
US7372985B2 (en) * 2003-08-15 2008-05-13 Massachusetts Institute Of Technology Systems and methods for volumetric tissue scanning microscopy
EP1678544A1 (de) * 2003-09-25 2006-07-12 Leica Microsystems CMS GmbH Verfahren zur probenuntersuchung und mikroskop mit evaneszenter probenbeleuchtung
US20050134857A1 (en) * 2003-12-22 2005-06-23 Chartered Semiconductor Manufacturing Ltd. Method to monitor silicide formation on product wafers
JP2005315792A (ja) * 2004-04-30 2005-11-10 Sony Corp 欠陥検査分類装置
US20060091334A1 (en) 2004-11-03 2006-05-04 Jan-Peter Urbach Con-focal imaging system and method using destructive interference to enhance image contrast of light scattering objects on a sample surface
JP4778755B2 (ja) * 2005-09-09 2011-09-21 株式会社日立ハイテクノロジーズ 欠陥検査方法及びこれを用いた装置
US7554656B2 (en) * 2005-10-06 2009-06-30 Kla-Tencor Technologies Corp. Methods and systems for inspection of a wafer
JP2007294604A (ja) * 2006-04-24 2007-11-08 Tokyo Seimitsu Co Ltd 外観検査装置及び外観検査方法
DE102006019384B4 (de) 2006-04-26 2015-10-22 Carl Zeiss Microscopy Gmbh Mikroskop und Mikroskopierverfahren zur Messung des Oberflächenprofils eines Objekts
KR101519932B1 (ko) * 2006-12-22 2015-05-13 지고 코포레이션 표면 특징물의 특성을 측정하기 위한 장치 및 방법
JP2008268387A (ja) * 2007-04-18 2008-11-06 Nidec Tosok Corp 共焦点顕微鏡
KR101254161B1 (ko) * 2007-12-14 2013-04-18 지고 코포레이션 주사 간섭계를 사용해서 표면 구조를 분석하는 방법 및 장치
US8194240B1 (en) * 2008-03-04 2012-06-05 Kla-Tencor Corporation Enhanced focusing capability on a sample using a spot matrix
KR101697240B1 (ko) * 2008-04-04 2017-01-17 난다 테크놀로지스 게엠베하 광학 검사 시스템 및 방법
JP2009262161A (ja) * 2008-04-22 2009-11-12 Olympus Corp 修正装置、修正方法、制御装置、およびプログラム
KR20110010749A (ko) * 2008-04-30 2011-02-07 가부시키가이샤 니콘 관찰 장치 및 관찰 방법
JP2009282112A (ja) * 2008-05-20 2009-12-03 Mitsutoyo Corp 共焦点顕微鏡
TWI490444B (zh) * 2009-01-23 2015-07-01 Univ Nat Taipei Technology 線型多波長共焦顯微方法與系統
US8605275B2 (en) * 2009-01-26 2013-12-10 Kla-Tencor Corp. Detecting defects on a wafer
JP2010266406A (ja) * 2009-05-18 2010-11-25 Hitachi Kokusai Electric Inc 測定装置
JP2012530929A (ja) 2009-06-22 2012-12-06 エーエスエムエル ネザーランズ ビー．ブイ． オブジェクト検査システムおよび方法
JP2011192879A (ja) * 2010-03-16 2011-09-29 Toshiba Corp 不揮発性記憶装置および不揮発性記憶装置の製造方法
JP5525336B2 (ja) * 2010-06-08 2014-06-18 株式会社日立ハイテクノロジーズ 欠陥検査方法および欠陥検査装置
WO2012006221A1 (en) 2010-07-03 2012-01-12 Rudolph Technologies, Inc. Scratch detection method and apparatus
NL2008110A (en) 2011-02-18 2012-08-21 Asml Netherlands Bv Measuring method, measuring apparatus, lithographic apparatus and device manufacturing method.
JP2012174961A (ja) * 2011-02-23 2012-09-10 Toshiba Corp 半導体記憶装置の製造方法
US20120224183A1 (en) * 2011-03-02 2012-09-06 Zygo Corporation Interferometric metrology of surfaces, films and underresolved structures
US20120316855A1 (en) * 2011-06-08 2012-12-13 Kla-Tencor Corporation Using Three-Dimensional Representations for Defect-Related Applications
JP5611149B2 (ja) * 2011-08-23 2014-10-22 株式会社日立ハイテクノロジーズ 光学顕微鏡装置及びこれを備えた検査装置
US8614790B2 (en) * 2011-12-12 2013-12-24 Applied Materials Israel, Ltd. Optical system and method for inspection of patterned samples
US20130148115A1 (en) * 2011-12-12 2013-06-13 Yoav Berlatzky Optical system and method for inspection of patterned samples
WO2013134068A1 (en) * 2012-03-07 2013-09-12 Kla-Tencor Corporation Wafer and reticle inspection systems and method for selecting illumination pupil configurations
US8654352B1 (en) * 2012-08-08 2014-02-18 Asm Technology Singapore Pte Ltd Chromatic confocal scanning apparatus

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6258143A (ja) * 1985-08-02 1987-03-13 アメリカン　テレフォン　アンド　テレグラフ　カムパニー 半導体材料の欠陥の光学的検出方法
JPH0424541A (ja) * 1990-05-21 1992-01-28 Mitsui Mining & Smelting Co Ltd 内部欠陥測定方法および装置
JPH10293102A (ja) * 1998-05-11 1998-11-04 Mitsui Mining & Smelting Co Ltd 半導体等における欠陥の検出方法
JP2000249529A (ja) * 1999-03-02 2000-09-14 Sony Corp 欠陥検査装置および欠陥検査方法
US20050156098A1 (en) * 1999-03-23 2005-07-21 Fairley Christopher R. Confocal wafer inspection method and apparatus
JP2001194321A (ja) * 2000-01-12 2001-07-19 Tokyo Seimitsu Co Ltd 半導体ウエハの検査装置
JP2005055196A (ja) * 2003-08-05 2005-03-03 Olympus Corp 基板検査方法及びその装置
JP2007506955A (ja) * 2003-09-25 2007-03-22 ライカ マイクロシステムス ツェーエムエス ゲーエムベーハー エバネッセント波照明を備えた走査顕微鏡
US7659975B1 (en) * 2005-09-21 2010-02-09 Kla-Tencor Technologies Corp. Methods and systems for inspection of a wafer or setting up an inspection process
JP2010014439A (ja) * 2008-07-01 2010-01-21 Fujitsu Microelectronics Ltd 欠陥検査装置及び欠陥検査方法
JP2010048730A (ja) * 2008-08-25 2010-03-04 Hitachi High-Technologies Corp 欠陥検査方法及びその装置

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019525180A (ja) * 2016-08-05 2019-09-05 ケーエルエー−テンカー コーポレイション 大粒子監視及びレーザパワー制御を伴う表面欠陥検査
JP7184763B2 (ja) 2016-10-07 2022-12-06 ケーエルエー コーポレイション 半導体ウェハ検査用三次元イメージング
JP2019535143A (ja) * 2016-10-07 2019-12-05 ケーエルエー コーポレイション 半導体ウェハ検査用三次元イメージング
US10481111B2 (en) 2016-10-21 2019-11-19 Kla-Tencor Corporation Calibration of a small angle X-ray scatterometry based metrology system
WO2018075999A1 (en) * 2016-10-21 2018-04-26 Kla-Tencor Corporation Calibration of a small angle x-ray scatterometry based metrology system
JP2020501144A (ja) * 2016-12-07 2020-01-16 オルボテック リミテッド 欠陥良否判定方法及び装置
JP7706600B2 (ja) 2016-12-07 2025-07-11 オルボテック リミテッド 欠陥良否判定方法及び装置
KR102719211B1 (ko) * 2016-12-07 2024-10-18 오르보테크 엘티디. 결함 품질을 판단하기 위한 방법 및 장치
JP2024087006A (ja) * 2016-12-07 2024-06-28 オルボテック リミテッド 欠陥良否判定方法及び装置
KR20230116951A (ko) * 2016-12-07 2023-08-04 오르보테크 엘티디. 결함 품질을 판단하기 위한 방법 및 장치
JP2022176404A (ja) * 2016-12-07 2022-11-28 オルボテック リミテッド 欠陥良否判定方法及び装置
KR102790344B1 (ko) 2016-12-29 2025-04-01 엘지디스플레이 주식회사 검사장치 및 이를 이용한 검사방법
KR20180077898A (ko) * 2016-12-29 2018-07-09 엘지디스플레이 주식회사 검사장치 및 이를 이용한 검사방법
KR20190098262A (ko) * 2017-01-10 2019-08-21 케이엘에이 코포레이션 심층적으로 적층된 층들을 갖는 웨이퍼들에서 결함 분류기를 트레이닝하고 적용하기 위한 시스템, 방법
JP2020514721A (ja) * 2017-01-10 2020-05-21 ケーエルエー コーポレイション 深くスタック化された層を有するウェハにおいて欠陥分類器を訓練して適用するためのシステムと方法
KR102536011B1 (ko) * 2017-01-10 2023-05-23 케이엘에이 코포레이션 심층적으로 적층된 층들을 갖는 웨이퍼들에서 결함 분류기를 트레이닝하고 적용하기 위한 시스템, 방법
JP7200113B2 (ja) 2017-01-10 2023-01-06 ケーエルエー コーポレイション 深くスタック化された層を有するウェハにおいて欠陥分類器を訓練して適用するためのシステムと方法
JP2020508568A (ja) * 2017-02-17 2020-03-19 ケーエルエー コーポレイション 厚膜及び高アスペクト比構造の計測方法及びシステム
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US11852590B1 (en) 2017-04-05 2023-12-26 Kla Corporation Systems and methods for metrology with layer-specific illumination spectra
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