JP2016516307A5 - - Google Patents

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JP2016516307A5
JP2016516307A5 JP2016506620A JP2016506620A JP2016516307A5 JP 2016516307 A5 JP2016516307 A5 JP 2016516307A5 JP 2016506620 A JP2016506620 A JP 2016506620A JP 2016506620 A JP2016506620 A JP 2016506620A JP 2016516307 A5 JP2016516307 A5 JP 2016516307A5
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lens
illumination
diffraction limit
output beam
lenses
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JP2016506620A 2013-04-03 2014-04-03 垂直スタックメモリにおいて欠陥深さを決定するための装置および方法 Pending JP2016516307A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361807753P 2013-04-03 2013-04-03
US61/807,753 2013-04-03
US14/226,745 US9696264B2 (en) 2013-04-03 2014-03-26 Apparatus and methods for determining defect depths in vertical stack memory
US14/226,745 2014-03-26
PCT/US2014/032842 WO2014165680A1 (en) 2013-04-03 2014-04-03 Apparatus and methods for determining defect depths in vertical stack memory

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JP2019129253A Division JP2019208039A (ja) 2013-04-03 2019-07-11 垂直スタックメモリにおいて欠陥深さを決定するための方法及びシステム

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JP2016516307A JP2016516307A (ja) 2016-06-02
JP2016516307A5 true JP2016516307A5 (enExample) 2017-07-13

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JP2016506620A Pending JP2016516307A (ja) 2013-04-03 2014-04-03 垂直スタックメモリにおいて欠陥深さを決定するための装置および方法
JP2019129253A Pending JP2019208039A (ja) 2013-04-03 2019-07-11 垂直スタックメモリにおいて欠陥深さを決定するための方法及びシステム
JP2021168628A Active JP7273121B2 (ja) 2013-04-03 2021-10-14 垂直スタックメモリにおいて欠陥深さを決定するための方法及びシステム

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JP2019129253A Pending JP2019208039A (ja) 2013-04-03 2019-07-11 垂直スタックメモリにおいて欠陥深さを決定するための方法及びシステム
JP2021168628A Active JP7273121B2 (ja) 2013-04-03 2021-10-14 垂直スタックメモリにおいて欠陥深さを決定するための方法及びシステム

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US (1) US9696264B2 (enExample)
JP (3) JP2016516307A (enExample)
KR (1) KR102079419B1 (enExample)
TW (1) TWI603076B (enExample)
WO (1) WO2014165680A1 (enExample)

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