JP2016514213A - 基板上の高純度アルミニウムトップコート - Google Patents
基板上の高純度アルミニウムトップコート Download PDFInfo
- Publication number
- JP2016514213A JP2016514213A JP2016500560A JP2016500560A JP2016514213A JP 2016514213 A JP2016514213 A JP 2016514213A JP 2016500560 A JP2016500560 A JP 2016500560A JP 2016500560 A JP2016500560 A JP 2016500560A JP 2016514213 A JP2016514213 A JP 2016514213A
- Authority
- JP
- Japan
- Prior art keywords
- article
- aluminum
- aluminum coating
- thickness
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 97
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 97
- 239000000758 substrate Substances 0.000 title description 7
- 238000000576 coating method Methods 0.000 claims abstract description 60
- 239000011248 coating agent Substances 0.000 claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 claims abstract description 24
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 33
- 238000002048 anodisation reaction Methods 0.000 claims description 15
- 238000009713 electroplating Methods 0.000 claims description 12
- 238000007743 anodising Methods 0.000 claims description 9
- 230000003746 surface roughness Effects 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 30
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 20
- 238000004140 cleaning Methods 0.000 description 19
- 238000007747 plating Methods 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 235000006408 oxalic acid Nutrition 0.000 description 10
- 239000002245 particle Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- 239000003929 acidic solution Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005108 dry cleaning Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000010284 wire arc spraying Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006392 deoxygenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 238000000095 laser ablation inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/024—Anodisation under pulsed or modulated current or potential
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/54—Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
Abstract
Description
Claims (15)
- 処理チャンバ用チャンバコンポーネントの製造方法であって、
不純物を含む物品上に、実質的に不純物を含まないアルミニウムコーティングを形成する工程を含む方法。 - アルミニウムコーティングは、約0.8ミル〜約5ミルの範囲内の厚さを有する請求項1記載の方法。
- アルミニウムコーティングを陽極酸化し、これによって陽極酸化層を形成する工程を含む請求項1記載の方法。
- 陽極酸化層は、アルミニウムコーティングの厚さの約30%〜約70%の範囲内の厚さを有する請求項3記載の方法。
- 陽極酸化層の表面粗さは、約40マイクロインチである請求項3記載の方法。
- 物品は、アルミニウム、銅、又はマグネシウムのうちの少なくとも1つの合金を含む請求項1記載の方法。
- アルミニウムコーティングを形成する工程は、電気メッキを実行する工程を含む請求項1記載の方法。
- 処理チャンバ用のチャンバコンポーネントであって、
不純物を含む物品と、
物品上のアルミニウムコーティングであって、実質的に不純物を含まないアルミニウムコーティングを含むチャンバコンポーネント。 - アルミニウムコーティングは、約0.8ミル〜約5ミルの範囲内の厚さを有する請求項8記載のチャンバコンポーネント。
- アルミニウムコーティングは、約0.4ミル〜約4ミルの範囲内の厚さを有する請求項8記載のチャンバコンポーネント。
- 陽極酸化層の表面粗さは、約40マイクロインチである請求項8記載のチャンバコンポーネント。
- 陽極酸化層の約半分が、陽極酸化中にアルミニウムコーティングの転換から形成される請求項10記載のチャンバコンポーネント。
- 物品は、アルミニウム、銅、又はマグネシウムのうちの少なくとも1つの合金を含む請求項8記載のチャンバコンポーネント。
- 物品は、セラミックス材料を含む請求項8記載のチャンバコンポーネント。
- アルミニウムコーティングは、物品上に電気メッキされる請求項8記載のチャンバコンポーネント。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361783667P | 2013-03-14 | 2013-03-14 | |
US61/783,667 | 2013-03-14 | ||
PCT/US2014/019999 WO2014158767A1 (en) | 2013-03-14 | 2014-03-03 | High purity aluminum top coat on substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016514213A true JP2016514213A (ja) | 2016-05-19 |
JP6449224B2 JP6449224B2 (ja) | 2019-01-09 |
Family
ID=51625051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016500560A Active JP6449224B2 (ja) | 2013-03-14 | 2014-03-03 | 基板上の高純度アルミニウムトップコート |
Country Status (5)
Country | Link |
---|---|
US (2) | US9850591B2 (ja) |
JP (1) | JP6449224B2 (ja) |
KR (1) | KR20150129660A (ja) |
TW (3) | TWI685590B (ja) |
WO (1) | WO2014158767A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016537506A (ja) * | 2013-11-13 | 2016-12-01 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 半導体製造コンポーネント用高純度金属トップコート |
US10204724B2 (en) | 2014-11-04 | 2019-02-12 | Yantai Shougang Magnetic Materials Inc. | Method of preparing a hard aluminum film on the surface of a Nd-Fe-B magnet |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6449224B2 (ja) | 2013-03-14 | 2019-01-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板上の高純度アルミニウムトップコート |
KR101802018B1 (ko) * | 2014-09-26 | 2017-11-27 | 주식회사 엘지화학 | 비수성 전해액 및 이를 포함하는 리튬 이차 전지 |
KR102210971B1 (ko) * | 2016-03-11 | 2021-02-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 프로세싱 장비 상에 이트륨 산화물을 형성하기 위한 방법 |
EP3428955A1 (en) * | 2017-07-10 | 2019-01-16 | Murata Manufacturing Co., Ltd. | Substrates employing surface-area amplification, for use in fabricating capacitive elements and other devices |
US10858741B2 (en) * | 2019-03-11 | 2020-12-08 | Applied Materials, Inc. | Plasma resistant multi-layer architecture for high aspect ratio parts |
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KR20150129660A (ko) | 2015-11-20 |
TW201925539A (zh) | 2019-07-01 |
US20180066373A1 (en) | 2018-03-08 |
TW201812106A (zh) | 2018-04-01 |
US10774436B2 (en) | 2020-09-15 |
US20160002811A1 (en) | 2016-01-07 |
JP6449224B2 (ja) | 2019-01-09 |
TW201441430A (zh) | 2014-11-01 |
TWI608131B (zh) | 2017-12-11 |
TWI685590B (zh) | 2020-02-21 |
WO2014158767A1 (en) | 2014-10-02 |
TWI656244B (zh) | 2019-04-11 |
US9850591B2 (en) | 2017-12-26 |
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