JP2016510953A5 - - Google Patents

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Publication number
JP2016510953A5
JP2016510953A5 JP2016500309A JP2016500309A JP2016510953A5 JP 2016510953 A5 JP2016510953 A5 JP 2016510953A5 JP 2016500309 A JP2016500309 A JP 2016500309A JP 2016500309 A JP2016500309 A JP 2016500309A JP 2016510953 A5 JP2016510953 A5 JP 2016510953A5
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JP
Japan
Prior art keywords
polishing
zones
zone
predicted
substrate
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JP2016500309A
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English (en)
Japanese (ja)
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JP6060308B2 (ja
JP2016510953A (ja
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Priority claimed from PCT/US2014/017277 external-priority patent/WO2014149330A1/en
Publication of JP2016510953A publication Critical patent/JP2016510953A/ja
Publication of JP2016510953A5 publication Critical patent/JP2016510953A5/ja
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Publication of JP6060308B2 publication Critical patent/JP6060308B2/ja
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JP2016500309A 2013-03-15 2014-02-20 インシトゥプロファイル制御（ｉｓｐｃ）を用いた残留物クリアリングの動的制御 Active JP6060308B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361787221P 2013-03-15 2013-03-15
US61/787,221 2013-03-15
PCT/US2014/017277 WO2014149330A1 (en) 2013-03-15 2014-02-20 Dynamic residue clearing control with in-situ profile control (ispc)

Publications (3)

Publication Number Publication Date
JP2016510953A JP2016510953A (ja) 2016-04-11
JP2016510953A5 true JP2016510953A5 (https=) 2016-11-04
JP6060308B2 JP6060308B2 (ja) 2017-01-11

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ID=51529181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016500309A Active JP6060308B2 (ja) 2013-03-15 2014-02-20 インシトゥプロファイル制御（ｉｓｐｃ）を用いた残留物クリアリングの動的制御

Country Status (5)

Country Link
US (1) US9242337B2 (https=)
JP (1) JP6060308B2 (https=)
KR (1) KR101699197B1 (https=)
TW (1) TWI564946B (https=)
WO (1) WO2014149330A1 (https=)

Families Citing this family (15)

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Publication number Priority date Publication date Assignee Title
US9248544B2 (en) * 2012-07-18 2016-02-02 Applied Materials, Inc. Endpoint detection during polishing using integrated differential intensity
JP6447472B2 (ja) 2015-11-26 2019-01-09 株式会社Sumco ウェーハ研磨方法
JP6406238B2 (ja) * 2015-12-18 2018-10-17 株式会社Sumco ウェーハ研磨方法および研磨装置
CN109844923B (zh) * 2016-10-10 2023-07-11 应用材料公司 用于化学机械抛光的实时轮廓控制
KR102807367B1 (ko) 2016-10-21 2025-05-15 어플라이드 머티어리얼스, 인코포레이티드 인-시튜 전자기 유도 모니터링 시스템을 위한 코어 구성
KR102525737B1 (ko) * 2016-11-16 2023-04-26 주식회사 케이씨텍 화학 기계적 연마장치 및 그 제어방법
US11989492B2 (en) * 2018-12-26 2024-05-21 Applied Materials, Inc. Preston matrix generator
WO2020160091A1 (en) * 2019-01-31 2020-08-06 The Hillman Group, Inc. Automatic knife sharpening machine with sharpness detection
JP7446714B2 (ja) * 2019-02-01 2024-03-11 株式会社荏原製作所 基板処理装置、および基板処理方法
JP7361637B2 (ja) * 2020-03-09 2023-10-16 株式会社荏原製作所 研磨方法、研磨装置、およびプログラムを記録したコンピュータ読み取り可能な記録媒体
TWI810069B (zh) * 2020-06-08 2023-07-21 美商應用材料股份有限公司 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品
JP7560320B2 (ja) * 2020-10-29 2024-10-02 株式会社ディスコ ウェーハの研削方法
US11931853B2 (en) * 2021-03-05 2024-03-19 Applied Materials, Inc. Control of processing parameters for substrate polishing with angularly distributed zones using cost function
CN116230572B (zh) * 2023-03-09 2026-02-17 长鑫存储技术有限公司 一种半导体制程的材料残余状态检测方法
CN121018396B (zh) * 2025-10-22 2026-03-10 合肥晶合集成电路股份有限公司 研磨的控制方法、研磨的控制系统及研磨方法

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AU2001279126A1 (en) * 2000-07-31 2002-02-13 Silicon Valley Group Inc In-situ method and apparatus for end point detection in chemical mechanical polishing
US6929531B2 (en) * 2002-09-19 2005-08-16 Lam Research Corporation System and method for metal residue detection and mapping within a multi-step sequence
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
EP1758711B1 (en) * 2004-06-21 2013-08-07 Ebara Corporation Polishing apparatus and polishing method
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US8392012B2 (en) * 2008-10-27 2013-03-05 Applied Materials, Inc. Multiple libraries for spectrographic monitoring of zones of a substrate during processing
KR101324644B1 (ko) * 2005-08-22 2013-11-01 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법
US20070108066A1 (en) * 2005-10-28 2007-05-17 Applied Materials, Inc. Voltage mode current control
US20070158201A1 (en) 2006-01-06 2007-07-12 Applied Materials, Inc. Electrochemical processing with dynamic process control
TWI286094B (en) * 2006-05-18 2007-09-01 United Microelectronics Corp Method for in-line controlling hybrid chemical mechanical polishing process
JP5283506B2 (ja) * 2006-09-12 2013-09-04 株式会社荏原製作所 研磨装置および研磨方法
US8369978B2 (en) * 2008-09-04 2013-02-05 Applied Materials Adjusting polishing rates by using spectrographic monitoring of a substrate during processing
JP5583137B2 (ja) 2008-11-26 2014-09-03 アプライド マテリアルズ インコーポレイテッド フィードバックおよびフィードフォワードプロセス制御のために光計測学を使用すること
US9579767B2 (en) 2010-04-28 2017-02-28 Applied Materials, Inc. Automatic generation of reference spectra for optical monitoring of substrates
US8190285B2 (en) * 2010-05-17 2012-05-29 Applied Materials, Inc. Feedback for polishing rate correction in chemical mechanical polishing
US8616935B2 (en) * 2010-06-02 2013-12-31 Applied Materials, Inc. Control of overpolishing of multiple substrates on the same platen in chemical mechanical polishing
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JP6050571B2 (ja) 2011-08-09 2016-12-21 株式会社荏原製作所 研磨監視方法および研磨装置
US9095952B2 (en) * 2013-01-23 2015-08-04 Applied Materials, Inc. Reflectivity measurements during polishing using a camera

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