KR101699197B1 - 인-시튜 프로파일 제어(ｉｓｐｃ)를 이용한 동적 잔류물 클리어링 제어 - Google Patents

인-시튜 프로파일 제어(ｉｓｐｃ)를 이용한 동적 잔류물 클리어링 제어 Download PDF

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KR101699197B1
KR101699197B1 KR1020157029826A KR20157029826A KR101699197B1 KR 101699197 B1 KR101699197 B1 KR 101699197B1 KR 1020157029826 A KR1020157029826 A KR 1020157029826A KR 20157029826 A KR20157029826 A KR 20157029826A KR 101699197 B1 KR101699197 B1 KR 101699197B1
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polishing
substrate
zone
zones
time
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KR20150132524A (ko
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준 치안
시바쿠마르 단다파니
벤자민 체리안
토마스 에이치. 오스테르헬드
찰스 씨. 가렛슨
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어플라이드 머티어리얼스, 인코포레이티드
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    • H01L21/304—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B35/00—Machines or devices designed for superfinishing surfaces on work, i.e. by means of abrading blocks reciprocating with high frequency
    • B24B35/005—Machines or devices designed for superfinishing surfaces on work, i.e. by means of abrading blocks reciprocating with high frequency for making three-dimensional objects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • H01L21/30625—
    • H01L22/12—

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020157029826A 2013-03-15 2014-02-20 인-시튜 프로파일 제어(ｉｓｐｃ)를 이용한 동적 잔류물 클리어링 제어 Active KR101699197B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361787221P 2013-03-15 2013-03-15
US61/787,221 2013-03-15
PCT/US2014/017277 WO2014149330A1 (en) 2013-03-15 2014-02-20 Dynamic residue clearing control with in-situ profile control (ispc)

Publications (2)

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KR20150132524A KR20150132524A (ko) 2015-11-25
KR101699197B1 true KR101699197B1 (ko) 2017-01-23

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Country Status (5)

Country Link
US (1) US9242337B2 (https=)
JP (1) JP6060308B2 (https=)
KR (1) KR101699197B1 (https=)
TW (1) TWI564946B (https=)
WO (1) WO2014149330A1 (https=)

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US9248544B2 (en) * 2012-07-18 2016-02-02 Applied Materials, Inc. Endpoint detection during polishing using integrated differential intensity
JP6447472B2 (ja) 2015-11-26 2019-01-09 株式会社Sumco ウェーハ研磨方法
JP6406238B2 (ja) * 2015-12-18 2018-10-17 株式会社Sumco ウェーハ研磨方法および研磨装置
CN109844923B (zh) * 2016-10-10 2023-07-11 应用材料公司 用于化学机械抛光的实时轮廓控制
KR102547156B1 (ko) 2016-10-21 2023-06-26 어플라이드 머티어리얼스, 인코포레이티드 인-시튜 전자기 유도 모니터링 시스템을 위한 코어 구성
KR102525737B1 (ko) * 2016-11-16 2023-04-26 주식회사 케이씨텍 화학 기계적 연마장치 및 그 제어방법
US11989492B2 (en) * 2018-12-26 2024-05-21 Applied Materials, Inc. Preston matrix generator
US11850698B2 (en) * 2019-01-31 2023-12-26 The Hillman Group, Inc. Automatic knife sharpening machine with sharpness detection
JP7446714B2 (ja) * 2019-02-01 2024-03-11 株式会社荏原製作所 基板処理装置、および基板処理方法
JP7361637B2 (ja) * 2020-03-09 2023-10-16 株式会社荏原製作所 研磨方法、研磨装置、およびプログラムを記録したコンピュータ読み取り可能な記録媒体
TWI810069B (zh) 2020-06-08 2023-07-21 美商應用材料股份有限公司 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品
JP7560320B2 (ja) * 2020-10-29 2024-10-02 株式会社ディスコ ウェーハの研削方法
US12343840B2 (en) 2021-03-05 2025-07-01 Applied Materials, Inc. Control of processing parameters for substrate polishing with substrate precession
CN116230572B (zh) * 2023-03-09 2026-02-17 长鑫存储技术有限公司 一种半导体制程的材料残余状态检测方法
CN121018396B (zh) * 2025-10-22 2026-03-10 合肥晶合集成电路股份有限公司 研磨的控制方法、研磨的控制系统及研磨方法

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Also Published As

Publication number Publication date
KR20150132524A (ko) 2015-11-25
US20140273749A1 (en) 2014-09-18
TWI564946B (zh) 2017-01-01
US9242337B2 (en) 2016-01-26
WO2014149330A1 (en) 2014-09-25
JP6060308B2 (ja) 2017-01-11
JP2016510953A (ja) 2016-04-11
TW201503244A (zh) 2015-01-16

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