TWI564946B - 利用原位輪廓控制（ｉｓｐｃ）之動態殘留物清除控制法 - Google Patents
利用原位輪廓控制（ｉｓｐｃ）之動態殘留物清除控制法 Download PDFInfo
- Publication number
- TWI564946B TWI564946B TW103107921A TW103107921A TWI564946B TW I564946 B TWI564946 B TW I564946B TW 103107921 A TW103107921 A TW 103107921A TW 103107921 A TW103107921 A TW 103107921A TW I564946 B TWI564946 B TW I564946B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- region
- regions
- grinding
- index value
- Prior art date
Links
- 238000011065 in-situ storage Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 358
- 238000000227 grinding Methods 0.000 claims description 173
- 238000001228 spectrum Methods 0.000 claims description 169
- 238000005498 polishing Methods 0.000 claims description 150
- 238000000034 method Methods 0.000 claims description 127
- 230000008569 process Effects 0.000 claims description 71
- 238000012886 linear function Methods 0.000 claims description 68
- 238000012544 monitoring process Methods 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 38
- 230000003287 optical effect Effects 0.000 claims description 38
- 238000007517 polishing process Methods 0.000 claims description 38
- 230000003595 spectral effect Effects 0.000 claims description 23
- 238000010926 purge Methods 0.000 claims description 17
- 239000013590 bulk material Substances 0.000 claims description 15
- 238000004364 calculation method Methods 0.000 claims description 7
- 230000006870 function Effects 0.000 claims description 7
- 238000012986 modification Methods 0.000 claims description 3
- 230000004048 modification Effects 0.000 claims description 3
- 238000011068 loading method Methods 0.000 claims description 2
- 238000004611 spectroscopical analysis Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 53
- 238000005259 measurement Methods 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 13
- 239000002002 slurry Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 238000001514 detection method Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 238000004590 computer program Methods 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 239000000835 fiber Substances 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000005070 sampling Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000004422 calculation algorithm Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- 101100119135 Mus musculus Esrrb gene Proteins 0.000 description 2
- 101150107278 POLD1 gene Proteins 0.000 description 2
- 101150043219 POLD2 gene Proteins 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000012625 in-situ measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000003442 weekly effect Effects 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical group [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B35/00—Machines or devices designed for superfinishing surfaces on work, i.e. by means of abrading blocks reciprocating with high frequency
- B24B35/005—Machines or devices designed for superfinishing surfaces on work, i.e. by means of abrading blocks reciprocating with high frequency for making three-dimensional objects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361787221P | 2013-03-15 | 2013-03-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201503244A TW201503244A (zh) | 2015-01-16 |
| TWI564946B true TWI564946B (zh) | 2017-01-01 |
Family
ID=51529181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103107921A TWI564946B (zh) | 2013-03-15 | 2014-03-07 | 利用原位輪廓控制（ｉｓｐｃ）之動態殘留物清除控制法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9242337B2 (https=) |
| JP (1) | JP6060308B2 (https=) |
| KR (1) | KR101699197B1 (https=) |
| TW (1) | TWI564946B (https=) |
| WO (1) | WO2014149330A1 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9248544B2 (en) * | 2012-07-18 | 2016-02-02 | Applied Materials, Inc. | Endpoint detection during polishing using integrated differential intensity |
| JP6447472B2 (ja) | 2015-11-26 | 2019-01-09 | 株式会社Sumco | ウェーハ研磨方法 |
| JP6406238B2 (ja) * | 2015-12-18 | 2018-10-17 | 株式会社Sumco | ウェーハ研磨方法および研磨装置 |
| CN109844923B (zh) * | 2016-10-10 | 2023-07-11 | 应用材料公司 | 用于化学机械抛光的实时轮廓控制 |
| KR102547156B1 (ko) | 2016-10-21 | 2023-06-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 인-시튜 전자기 유도 모니터링 시스템을 위한 코어 구성 |
| KR102525737B1 (ko) * | 2016-11-16 | 2023-04-26 | 주식회사 케이씨텍 | 화학 기계적 연마장치 및 그 제어방법 |
| US11989492B2 (en) * | 2018-12-26 | 2024-05-21 | Applied Materials, Inc. | Preston matrix generator |
| US11850698B2 (en) * | 2019-01-31 | 2023-12-26 | The Hillman Group, Inc. | Automatic knife sharpening machine with sharpness detection |
| JP7446714B2 (ja) * | 2019-02-01 | 2024-03-11 | 株式会社荏原製作所 | 基板処理装置、および基板処理方法 |
| JP7361637B2 (ja) * | 2020-03-09 | 2023-10-16 | 株式会社荏原製作所 | 研磨方法、研磨装置、およびプログラムを記録したコンピュータ読み取り可能な記録媒体 |
| TWI810069B (zh) | 2020-06-08 | 2023-07-21 | 美商應用材料股份有限公司 | 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品 |
| JP7560320B2 (ja) * | 2020-10-29 | 2024-10-02 | 株式会社ディスコ | ウェーハの研削方法 |
| US12343840B2 (en) | 2021-03-05 | 2025-07-01 | Applied Materials, Inc. | Control of processing parameters for substrate polishing with substrate precession |
| CN116230572B (zh) * | 2023-03-09 | 2026-02-17 | 长鑫存储技术有限公司 | 一种半导体制程的材料残余状态检测方法 |
| CN121018396B (zh) * | 2025-10-22 | 2026-03-10 | 合肥晶合集成电路股份有限公司 | 研磨的控制方法、研磨的控制系统及研磨方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200743550A (en) * | 2006-05-18 | 2007-12-01 | United Microelectronics Corp | Method for in-line controlling hybrid chemical mechanical polishing process |
| TW201103085A (en) * | 2005-08-22 | 2011-01-16 | Applied Materials Inc | Apparatus and methods for spectrum based monitoring of chemical mechanical polishing |
| TW201210742A (en) * | 2010-05-17 | 2012-03-16 | Applied Materials Inc | Feedback for polishing rate correction in chemical mechanical polishing |
| TW201223703A (en) * | 2010-09-01 | 2012-06-16 | Applied Materials Inc | Feedback control of polishing using optical detection of clearance |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MY128145A (en) * | 2000-07-31 | 2007-01-31 | Silicon Valley Group Thermal | In-situ method and apparatus for end point detection in chemical mechanical polishing |
| US6929531B2 (en) * | 2002-09-19 | 2005-08-16 | Lam Research Corporation | System and method for metal residue detection and mapping within a multi-step sequence |
| US7063597B2 (en) | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
| CN1972780B (zh) * | 2004-06-21 | 2010-09-08 | 株式会社荏原制作所 | 抛光设备和抛光方法 |
| US7084064B2 (en) | 2004-09-14 | 2006-08-01 | Applied Materials, Inc. | Full sequence metal and barrier layer electrochemical mechanical processing |
| US8392012B2 (en) | 2008-10-27 | 2013-03-05 | Applied Materials, Inc. | Multiple libraries for spectrographic monitoring of zones of a substrate during processing |
| US20070108066A1 (en) * | 2005-10-28 | 2007-05-17 | Applied Materials, Inc. | Voltage mode current control |
| US20070158201A1 (en) | 2006-01-06 | 2007-07-12 | Applied Materials, Inc. | Electrochemical processing with dynamic process control |
| CN101511539B (zh) * | 2006-09-12 | 2012-08-22 | 株式会社荏原制作所 | 研磨装置及研磨方法 |
| KR101834944B1 (ko) * | 2008-09-04 | 2018-03-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 프로세싱 동안 기판의 분광 모니터링의 이용에 의한 연마 속도들의 조정 |
| US8292693B2 (en) | 2008-11-26 | 2012-10-23 | Applied Materials, Inc. | Using optical metrology for wafer to wafer feed back process control |
| US9579767B2 (en) | 2010-04-28 | 2017-02-28 | Applied Materials, Inc. | Automatic generation of reference spectra for optical monitoring of substrates |
| US8616935B2 (en) * | 2010-06-02 | 2013-12-31 | Applied Materials, Inc. | Control of overpolishing of multiple substrates on the same platen in chemical mechanical polishing |
| US20120034844A1 (en) | 2010-08-05 | 2012-02-09 | Applied Materials, Inc. | Spectrographic monitoring using index tracking after detection of layer clearing |
| TW201223702A (en) | 2010-08-06 | 2012-06-16 | Applied Materials Inc | Techniques for matching measured spectra to reference spectra for in-situ optical monitoring |
| US20120276817A1 (en) * | 2011-04-27 | 2012-11-01 | Iravani Hassan G | Eddy current monitoring of metal residue or metal pillars |
| JP6050571B2 (ja) | 2011-08-09 | 2016-12-21 | 株式会社荏原製作所 | 研磨監視方法および研磨装置 |
| US9095952B2 (en) * | 2013-01-23 | 2015-08-04 | Applied Materials, Inc. | Reflectivity measurements during polishing using a camera |
-
2014
- 2014-02-20 US US14/185,185 patent/US9242337B2/en active Active
- 2014-02-20 WO PCT/US2014/017277 patent/WO2014149330A1/en not_active Ceased
- 2014-02-20 KR KR1020157029826A patent/KR101699197B1/ko active Active
- 2014-02-20 JP JP2016500309A patent/JP6060308B2/ja active Active
- 2014-03-07 TW TW103107921A patent/TWI564946B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201103085A (en) * | 2005-08-22 | 2011-01-16 | Applied Materials Inc | Apparatus and methods for spectrum based monitoring of chemical mechanical polishing |
| TW200743550A (en) * | 2006-05-18 | 2007-12-01 | United Microelectronics Corp | Method for in-line controlling hybrid chemical mechanical polishing process |
| TW201210742A (en) * | 2010-05-17 | 2012-03-16 | Applied Materials Inc | Feedback for polishing rate correction in chemical mechanical polishing |
| TW201223703A (en) * | 2010-09-01 | 2012-06-16 | Applied Materials Inc | Feedback control of polishing using optical detection of clearance |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150132524A (ko) | 2015-11-25 |
| KR101699197B1 (ko) | 2017-01-23 |
| US20140273749A1 (en) | 2014-09-18 |
| US9242337B2 (en) | 2016-01-26 |
| WO2014149330A1 (en) | 2014-09-25 |
| JP6060308B2 (ja) | 2017-01-11 |
| JP2016510953A (ja) | 2016-04-11 |
| TW201503244A (zh) | 2015-01-16 |
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