JP2016504759A5 - - Google Patents
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- Publication number
- JP2016504759A5 JP2016504759A5 JP2015543112A JP2015543112A JP2016504759A5 JP 2016504759 A5 JP2016504759 A5 JP 2016504759A5 JP 2015543112 A JP2015543112 A JP 2015543112A JP 2015543112 A JP2015543112 A JP 2015543112A JP 2016504759 A5 JP2016504759 A5 JP 2016504759A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- oxygen precipitation
- heat treatment
- precipitation nuclei
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 48
- 239000001301 oxygen Substances 0.000 claims 48
- 229910052760 oxygen Inorganic materials 0.000 claims 48
- 238000001556 precipitation Methods 0.000 claims 40
- 238000000034 method Methods 0.000 claims 33
- 238000010438 heat treatment Methods 0.000 claims 21
- 239000010410 layer Substances 0.000 claims 11
- 239000002244 precipitate Substances 0.000 claims 11
- 230000003213 activating effect Effects 0.000 claims 10
- 239000002344 surface layer Substances 0.000 claims 10
- 239000013078 crystal Substances 0.000 claims 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 4
- TXUWMXQFNYDOEZ-UHFFFAOYSA-N 5-(1H-indol-3-ylmethyl)-3-methyl-2-sulfanylidene-4-imidazolidinone Chemical compound O=C1N(C)C(=S)NC1CC1=CNC2=CC=CC=C12 TXUWMXQFNYDOEZ-UHFFFAOYSA-N 0.000 claims 3
- 101001128694 Homo sapiens Neuroendocrine convertase 1 Proteins 0.000 claims 3
- 102100032132 Neuroendocrine convertase 1 Human genes 0.000 claims 3
- 101000973669 Petunia hybrida Bidirectional sugar transporter NEC1 Proteins 0.000 claims 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 3
- 229910052786 argon Inorganic materials 0.000 claims 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 2
- 239000001569 carbon dioxide Substances 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 2
- 230000007423 decrease Effects 0.000 claims 2
- 239000001307 helium Substances 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261728084P | 2012-11-19 | 2012-11-19 | |
| US61/728,084 | 2012-11-19 | ||
| PCT/US2013/070771 WO2014078847A1 (en) | 2012-11-19 | 2013-11-19 | Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei by heat treatment |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018165923A Division JP6671436B2 (ja) | 2012-11-19 | 2018-09-05 | 熱処理により不活性な酸素析出核を活性化する高析出密度ウエハの製造 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016504759A JP2016504759A (ja) | 2016-02-12 |
| JP2016504759A5 true JP2016504759A5 (enExample) | 2016-12-28 |
Family
ID=49681223
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015543112A Pending JP2016504759A (ja) | 2012-11-19 | 2013-11-19 | 熱処理により不活性な酸素析出核を活性化する高析出密度ウエハの製造 |
| JP2018165923A Active JP6671436B2 (ja) | 2012-11-19 | 2018-09-05 | 熱処理により不活性な酸素析出核を活性化する高析出密度ウエハの製造 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018165923A Active JP6671436B2 (ja) | 2012-11-19 | 2018-09-05 | 熱処理により不活性な酸素析出核を活性化する高析出密度ウエハの製造 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9129919B2 (enExample) |
| JP (2) | JP2016504759A (enExample) |
| DE (1) | DE112013005512B4 (enExample) |
| TW (1) | TWI614808B (enExample) |
| WO (1) | WO2014078847A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014078847A1 (en) * | 2012-11-19 | 2014-05-22 | Sunedison, Inc. | Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei by heat treatment |
| DE102014208815B4 (de) * | 2014-05-09 | 2018-06-21 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe aus Silizium |
| DE102017213587A1 (de) | 2017-08-04 | 2019-02-07 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung der Halbleiterscheibe |
| DE102017219255A1 (de) | 2017-10-26 | 2019-05-02 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium |
| KR102741720B1 (ko) * | 2019-04-16 | 2024-12-11 | 신에쯔 한도타이 가부시키가이샤 | 실리콘 단결정 웨이퍼의 제조방법 및 실리콘 단결정 웨이퍼 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4437922A (en) * | 1982-03-26 | 1984-03-20 | International Business Machines Corporation | Method for tailoring oxygen precipitate particle density and distribution silicon wafers |
| US4851358A (en) | 1988-02-11 | 1989-07-25 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing |
| JP2617798B2 (ja) | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
| US5024723A (en) | 1990-05-07 | 1991-06-18 | Goesele Ulrich M | Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning |
| FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| JPH07106512A (ja) | 1993-10-04 | 1995-04-21 | Sharp Corp | 分子イオン注入を用いたｓｉｍｏｘ処理方法 |
| US5593494A (en) * | 1995-03-14 | 1997-01-14 | Memc Electronic Materials, Inc. | Precision controlled precipitation of oxygen in silicon |
| US6277501B1 (en) * | 1996-07-29 | 2001-08-21 | Sumitomo Metal Industries, Ltd. | Silicon epitaxial wafer and method for manufacturing the same |
| US5994761A (en) | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| WO2000013226A1 (en) | 1998-09-02 | 2000-03-09 | Memc Electronic Materials, Inc. | Process for preparing an ideal oxygen precipitating silicon wafer |
| US6336968B1 (en) | 1998-09-02 | 2002-01-08 | Memc Electronic Materials, Inc. | Non-oxygen precipitating czochralski silicon wafers |
| JP3811582B2 (ja) * | 1999-03-18 | 2006-08-23 | 信越半導体株式会社 | シリコン基板の熱処理方法およびその基板を用いたエピタキシャルウェーハの製造方法 |
| JP4605876B2 (ja) * | 2000-09-20 | 2011-01-05 | 信越半導体株式会社 | シリコンウエーハおよびシリコンエピタキシャルウエーハの製造方法 |
| TW541581B (en) | 2001-04-20 | 2003-07-11 | Memc Electronic Materials | Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates |
| US7201800B2 (en) * | 2001-12-21 | 2007-04-10 | Memc Electronic Materials, Inc. | Process for making silicon wafers with stabilized oxygen precipitate nucleation centers |
| DE10205084B4 (de) | 2002-02-07 | 2008-10-16 | Siltronic Ag | Verfahren zur thermischen Behandlung einer Siliciumscheibe sowie dadurch hergestellte Siliciumscheibe |
| DE60224099T2 (de) * | 2002-04-10 | 2008-04-03 | Memc Electronic Materials, Inc. | Silizium wafer und verfahren zur steuerung der tiefe einer defektfreien zone von einem silizium wafer mit idealem sauerstoffniederschlagverhalten |
| JP2004006615A (ja) * | 2002-04-26 | 2004-01-08 | Sumitomo Mitsubishi Silicon Corp | 高抵抗シリコンウエーハ及びその製造方法 |
| US6955718B2 (en) | 2003-07-08 | 2005-10-18 | Memc Electronic Materials, Inc. | Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
| JP2006261632A (ja) * | 2005-02-18 | 2006-09-28 | Sumco Corp | シリコンウェーハの熱処理方法 |
| US7485928B2 (en) * | 2005-11-09 | 2009-02-03 | Memc Electronic Materials, Inc. | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
| JP5072460B2 (ja) * | 2006-09-20 | 2012-11-14 | ジルトロニック アクチエンゲゼルシャフト | 半導体用シリコンウエハ、およびその製造方法 |
| KR101657970B1 (ko) | 2009-04-13 | 2016-09-20 | 신에쯔 한도타이 가부시키가이샤 | 어닐 웨이퍼 및 어닐 웨이퍼의 제조방법, 그리고 디바이스의 제조방법 |
| DE102010034002B4 (de) * | 2010-08-11 | 2013-02-21 | Siltronic Ag | Siliciumscheibe und Verfahren zu deren Herstellung |
| WO2014078847A1 (en) * | 2012-11-19 | 2014-05-22 | Sunedison, Inc. | Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei by heat treatment |
-
2013
- 2013-11-19 WO PCT/US2013/070771 patent/WO2014078847A1/en not_active Ceased
- 2013-11-19 TW TW102142115A patent/TWI614808B/zh active
- 2013-11-19 JP JP2015543112A patent/JP2016504759A/ja active Pending
- 2013-11-19 US US14/084,212 patent/US9129919B2/en active Active
- 2013-11-19 DE DE112013005512.0T patent/DE112013005512B4/de active Active
-
2018
- 2018-09-05 JP JP2018165923A patent/JP6671436B2/ja active Active
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