TWI614808B - 藉由活化非活性氧沉澱核製造高沉澱密度晶圓之方法 - Google Patents

藉由活化非活性氧沉澱核製造高沉澱密度晶圓之方法 Download PDF

Info

Publication number
TWI614808B
TWI614808B TW102142115A TW102142115A TWI614808B TW I614808 B TWI614808 B TW I614808B TW 102142115 A TW102142115 A TW 102142115A TW 102142115 A TW102142115 A TW 102142115A TW I614808 B TWI614808 B TW I614808B
Authority
TW
Taiwan
Prior art keywords
oxygen precipitation
wafer
heat treatment
oxygen
nuclei
Prior art date
Application number
TW102142115A
Other languages
English (en)
Chinese (zh)
Other versions
TW201426877A (zh
Inventor
羅伯特Ｊ 佛斯特
Robert J. Falster
瓦帝莫爾Ｖ 瓦諾庫夫
Vladimir V. Voronkov
馬爾寇 可那拉
Marco Cornara
丹尼拉 甘巴洛
Daniela Gambaro
瑪西米利安諾 歐摩
Massimiliano Olmo
Original Assignee
太陽愛迪生公司
Sunedison, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 太陽愛迪生公司, Sunedison, Inc. filed Critical 太陽愛迪生公司
Publication of TW201426877A publication Critical patent/TW201426877A/zh
Application granted granted Critical
Publication of TWI614808B publication Critical patent/TWI614808B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW102142115A 2012-11-19 2013-11-19 藉由活化非活性氧沉澱核製造高沉澱密度晶圓之方法 TWI614808B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261728084P 2012-11-19 2012-11-19
US61/728,084 2012-11-19

Publications (2)

Publication Number Publication Date
TW201426877A TW201426877A (zh) 2014-07-01
TWI614808B true TWI614808B (zh) 2018-02-11

Family

ID=49681223

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102142115A TWI614808B (zh) 2012-11-19 2013-11-19 藉由活化非活性氧沉澱核製造高沉澱密度晶圓之方法

Country Status (5)

Country Link
US (1) US9129919B2 (enExample)
JP (2) JP2016504759A (enExample)
DE (1) DE112013005512B4 (enExample)
TW (1) TWI614808B (enExample)
WO (1) WO2014078847A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016504759A (ja) * 2012-11-19 2016-02-12 サンエディソン・セミコンダクター・リミテッドＳｕｎＥｄｉｓｏｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｌｉｍｉｔｅｄ 熱処理により不活性な酸素析出核を活性化する高析出密度ウエハの製造
DE102014208815B4 (de) * 2014-05-09 2018-06-21 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe aus Silizium
DE102017213587A1 (de) 2017-08-04 2019-02-07 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung der Halbleiterscheibe
DE102017219255A1 (de) * 2017-10-26 2019-05-02 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium
WO2020213230A1 (ja) 2019-04-16 2020-10-22 信越半導体株式会社 シリコン単結晶ウェーハの製造方法及びシリコン単結晶ウェーハ

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6277501B1 (en) * 1996-07-29 2001-08-21 Sumitomo Metal Industries, Ltd. Silicon epitaxial wafer and method for manufacturing the same
US20030192469A1 (en) * 2002-04-10 2003-10-16 Memc Electronic Materials, Inc. Process for controlling denuded zone depth in an ideal oxygen precipitating silicon wafer
US20050048247A1 (en) * 2001-12-21 2005-03-03 Memc Electronic Materials, Inc. Process for making silicon wafers with stabilized oxygen precipitate nucleation centers
US20070105279A1 (en) * 2005-11-09 2007-05-10 Memc Electronic Materials, Inc. Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437922A (en) * 1982-03-26 1984-03-20 International Business Machines Corporation Method for tailoring oxygen precipitate particle density and distribution silicon wafers
US4851358A (en) 1988-02-11 1989-07-25 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
JP2617798B2 (ja) 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
US5024723A (en) 1990-05-07 1991-06-18 Goesele Ulrich M Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JPH07106512A (ja) 1993-10-04 1995-04-21 Sharp Corp 分子イオン注入を用いたｓｉｍｏｘ処理方法
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
US5994761A (en) 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
EP1110240B1 (en) 1998-09-02 2006-10-25 MEMC Electronic Materials, Inc. Process for preparing an ideal oxygen precipitating silicon wafer
US6336968B1 (en) 1998-09-02 2002-01-08 Memc Electronic Materials, Inc. Non-oxygen precipitating czochralski silicon wafers
JP3811582B2 (ja) * 1999-03-18 2006-08-23 信越半導体株式会社 シリコン基板の熱処理方法およびその基板を用いたエピタキシャルウェーハの製造方法
JP4605876B2 (ja) * 2000-09-20 2011-01-05 信越半導体株式会社 シリコンウエーハおよびシリコンエピタキシャルウエーハの製造方法
WO2002086960A1 (en) 2001-04-20 2002-10-31 Memc Electronic Materials, Inc. Method for the preparation of a silicon wafer having stabilized oxygen precipitates
DE10205084B4 (de) * 2002-02-07 2008-10-16 Siltronic Ag Verfahren zur thermischen Behandlung einer Siliciumscheibe sowie dadurch hergestellte Siliciumscheibe
JP2004006615A (ja) * 2002-04-26 2004-01-08 Sumitomo Mitsubishi Silicon Corp 高抵抗シリコンウエーハ及びその製造方法
US6955718B2 (en) 2003-07-08 2005-10-18 Memc Electronic Materials, Inc. Process for preparing a stabilized ideal oxygen precipitating silicon wafer
JP2006261632A (ja) 2005-02-18 2006-09-28 Sumco Corp シリコンウェーハの熱処理方法
JP5072460B2 (ja) * 2006-09-20 2012-11-14 ジルトロニック アクチエンゲゼルシャフト 半導体用シリコンウエハ、およびその製造方法
WO2010119614A1 (ja) * 2009-04-13 2010-10-21 信越半導体株式会社 アニールウエーハおよびアニールウエーハの製造方法ならびにデバイスの製造方法
DE102010034002B4 (de) * 2010-08-11 2013-02-21 Siltronic Ag Siliciumscheibe und Verfahren zu deren Herstellung
JP2016504759A (ja) * 2012-11-19 2016-02-12 サンエディソン・セミコンダクター・リミテッドＳｕｎＥｄｉｓｏｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｌｉｍｉｔｅｄ 熱処理により不活性な酸素析出核を活性化する高析出密度ウエハの製造

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6277501B1 (en) * 1996-07-29 2001-08-21 Sumitomo Metal Industries, Ltd. Silicon epitaxial wafer and method for manufacturing the same
US20050048247A1 (en) * 2001-12-21 2005-03-03 Memc Electronic Materials, Inc. Process for making silicon wafers with stabilized oxygen precipitate nucleation centers
US20030192469A1 (en) * 2002-04-10 2003-10-16 Memc Electronic Materials, Inc. Process for controlling denuded zone depth in an ideal oxygen precipitating silicon wafer
US20070105279A1 (en) * 2005-11-09 2007-05-10 Memc Electronic Materials, Inc. Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering

Also Published As

Publication number Publication date
DE112013005512T5 (de) 2015-07-30
DE112013005512B4 (de) 2019-03-28
JP2019004173A (ja) 2019-01-10
JP2016504759A (ja) 2016-02-12
US9129919B2 (en) 2015-09-08
WO2014078847A1 (en) 2014-05-22
JP6671436B2 (ja) 2020-03-25
US20140141537A1 (en) 2014-05-22
TW201426877A (zh) 2014-07-01

Similar Documents

Publication Publication Date Title
TW564500B (en) Process for controlling denuded zone dept in an ideal oxygen precipitating silicon wafer
TW541581B (en) Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates
US7135351B2 (en) Method for controlling of thermal donor formation in high resistivity CZ silicon
US8026145B2 (en) Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering
KR102306730B1 (ko) 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법
JP6671436B2 (ja) 熱処理により不活性な酸素析出核を活性化する高析出密度ウエハの製造
WO2001017024A1 (en) Fabrication method for pasted soi wafer and pasted soi wafer
JP5542383B2 (ja) シリコンウェーハの熱処理方法
JP2004503086A (ja) 削剥領域を備えたシリコンウエハの製造方法及び製造装置
WO2002052643A2 (en) Semiconductor wafer manufacturing process
US7537657B2 (en) Silicon wafer and process for producing it
WO2002049091A1 (en) Anneal wafer manufacturing method and anneal wafer
JP5262021B2 (ja) シリコンウェーハ及びその製造方法
JP2010003764A (ja) シリコンウェーハの製造方法