JP2016500845A5 - - Google Patents

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Publication number
JP2016500845A5
JP2016500845A5 JP2015538484A JP2015538484A JP2016500845A5 JP 2016500845 A5 JP2016500845 A5 JP 2016500845A5 JP 2015538484 A JP2015538484 A JP 2015538484A JP 2015538484 A JP2015538484 A JP 2015538484A JP 2016500845 A5 JP2016500845 A5 JP 2016500845A5
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JP
Japan
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region
optical
mark
optical position
position mark
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JP2015538484A
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Japanese (ja)
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JP6367209B2 (ja
JP2016500845A (ja
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Priority claimed from PCT/EP2013/072518 external-priority patent/WO2014064290A1/en
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Publication of JP2016500845A5 publication Critical patent/JP2016500845A5/ja
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JP2015538484A 2012-10-26 2013-10-28 リソグラフィシステムにおいて基板の位置を測定すること Active JP6367209B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261718872P 2012-10-26 2012-10-26
US61/718,872 2012-10-26
US201261732445P 2012-12-03 2012-12-03
US61/732,445 2012-12-03
PCT/EP2013/072518 WO2014064290A1 (en) 2012-10-26 2013-10-28 Determining a position of a substrate in lithography

Publications (3)

Publication Number Publication Date
JP2016500845A JP2016500845A (ja) 2016-01-14
JP2016500845A5 true JP2016500845A5 (enExample) 2018-04-12
JP6367209B2 JP6367209B2 (ja) 2018-08-01

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ID=49515344

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JP2015538484A Active JP6367209B2 (ja) 2012-10-26 2013-10-28 リソグラフィシステムにおいて基板の位置を測定すること

Country Status (9)

Country Link
US (1) US10054863B2 (enExample)
EP (1) EP2912521A1 (enExample)
JP (1) JP6367209B2 (enExample)
KR (2) KR102042212B1 (enExample)
CN (1) CN104885014B (enExample)
NL (1) NL2011681C2 (enExample)
RU (1) RU2659967C2 (enExample)
TW (1) TWI617903B (enExample)
WO (1) WO2014064290A1 (enExample)

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US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
DE102015211879B4 (de) * 2015-06-25 2018-10-18 Carl Zeiss Ag Vermessen von individuellen Daten einer Brille
US10386173B2 (en) * 2015-11-19 2019-08-20 Kris Vossough Integrated sensory systems
KR20170105247A (ko) * 2016-03-09 2017-09-19 삼성전자주식회사 마스크리스 노광 장치 및 이를 이용한 누적 광량의 측정 방법
CN105845596B (zh) * 2016-04-21 2018-12-04 京东方科技集团股份有限公司 一种测试设备及测试方法
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JP6644919B2 (ja) * 2016-08-15 2020-02-12 エーエスエムエル ネザーランズ ビー．ブイ． アライメント方法
US10021372B2 (en) 2016-09-16 2018-07-10 Qualcomm Incorporated Systems and methods for improved depth sensing
US10418290B2 (en) * 2017-02-02 2019-09-17 United Microelectronics Corp. Method of patterning semiconductor device
US10585360B2 (en) * 2017-08-25 2020-03-10 Applied Materials, Inc. Exposure system alignment and calibration method
US10670802B2 (en) 2017-08-31 2020-06-02 University of Pittsburgh—of the Commonwealth System of Higher Education Method of making a distributed optical fiber sensor having enhanced Rayleigh scattering and enhanced temperature stability, and monitoring systems employing same
CN107728236B (zh) * 2017-10-26 2019-07-05 鲁东大学 超构表面元件的制造方法及其产生纳米尺度纵向光斑链的方法
US10483080B1 (en) * 2018-07-17 2019-11-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
US10593509B2 (en) 2018-07-17 2020-03-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
WO2020180470A1 (en) * 2019-03-01 2020-09-10 Applied Materials, Inc. Transparent wafer center finder
US12451324B2 (en) 2020-03-13 2025-10-21 Asml Netherlands B.V. Leveling sensor in multiple charged-particle beam inspection
KR102937512B1 (ko) 2020-09-29 2026-03-12 삼성전자주식회사 극자외선(euv) 포토마스크 및 이를 이용한 반도체 장치 제조 방법

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US7863763B2 (en) * 2005-11-22 2011-01-04 Asml Netherlands B.V. Binary sinusoidal sub-wavelength gratings as alignment marks
US20080079920A1 (en) 2006-09-29 2008-04-03 Heiko Hommen Wafer exposure device and method
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NL2003762A (en) 2008-11-18 2010-05-20 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
US9696633B2 (en) 2010-04-12 2017-07-04 Asml Netherlands B.V. Substrate handling apparatus and lithographic apparatus
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NL2008285A (en) 2011-03-11 2012-09-12 Asml Netherlands Bv Method of controlling a lithographic apparatus, device manufacturing method, lithographic apparatus, computer program product and method of improving a mathematical model of a lithographic process.
TWI561936B (en) * 2011-04-22 2016-12-11 Mapper Lithography Ip Bv Position determination in a lithography system using a substrate having a partially reflective position mark
KR20140027298A (ko) * 2011-04-22 2014-03-06 마퍼 리쏘그라피 아이피 비.브이. 웨이퍼와 같은 타겟의 처리를 위한 리소그래피 시스템 및 웨이퍼와 같은 타겟의 처리를 위한 리소그래피 시스템 작동 방법

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