RU2659967C2 - Способ определения положения подложки в системе литографии, подложка для использования в таком способе и система литографии для выполнения такого способа - Google Patents

Способ определения положения подложки в системе литографии, подложка для использования в таком способе и система литографии для выполнения такого способа Download PDF

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RU2659967C2
RU2659967C2 RU2015119644A RU2015119644A RU2659967C2 RU 2659967 C2 RU2659967 C2 RU 2659967C2 RU 2015119644 A RU2015119644 A RU 2015119644A RU 2015119644 A RU2015119644 A RU 2015119644A RU 2659967 C2 RU2659967 C2 RU 2659967C2
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Russia
Prior art keywords
region
optical
substrate
mark
position mark
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RU2015119644A
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English (en)
Russian (ru)
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RU2015119644A (ru
Inventor
БУР Гвидо ДЕ
Нильс ВЕРГЕР
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МЭППЕР ЛИТОГРАФИ АйПи Б.В.
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/57—Mask-wafer alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
RU2015119644A 2012-10-26 2013-10-28 Способ определения положения подложки в системе литографии, подложка для использования в таком способе и система литографии для выполнения такого способа RU2659967C2 (ru)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261718872P 2012-10-26 2012-10-26
US61/718,872 2012-10-26
US201261732445P 2012-12-03 2012-12-03
US61/732,445 2012-12-03
PCT/EP2013/072518 WO2014064290A1 (en) 2012-10-26 2013-10-28 Determining a position of a substrate in lithography

Publications (2)

Publication Number Publication Date
RU2015119644A RU2015119644A (ru) 2016-12-20
RU2659967C2 true RU2659967C2 (ru) 2018-07-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU2015119644A RU2659967C2 (ru) 2012-10-26 2013-10-28 Способ определения положения подложки в системе литографии, подложка для использования в таком способе и система литографии для выполнения такого способа

Country Status (9)

Country Link
US (1) US10054863B2 (enExample)
EP (1) EP2912521A1 (enExample)
JP (1) JP6367209B2 (enExample)
KR (2) KR102042212B1 (enExample)
CN (1) CN104885014B (enExample)
NL (1) NL2011681C2 (enExample)
RU (1) RU2659967C2 (enExample)
TW (1) TWI617903B (enExample)
WO (1) WO2014064290A1 (enExample)

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US10670802B2 (en) 2017-08-31 2020-06-02 University of Pittsburgh—of the Commonwealth System of Higher Education Method of making a distributed optical fiber sensor having enhanced Rayleigh scattering and enhanced temperature stability, and monitoring systems employing same
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Also Published As

Publication number Publication date
TWI617903B (zh) 2018-03-11
RU2015119644A (ru) 2016-12-20
US10054863B2 (en) 2018-08-21
TW201426208A (zh) 2014-07-01
NL2011681C2 (en) 2014-05-01
KR20150070407A (ko) 2015-06-24
WO2014064290A1 (en) 2014-05-01
JP6367209B2 (ja) 2018-08-01
EP2912521A1 (en) 2015-09-02
KR102042212B1 (ko) 2019-11-08
JP2016500845A (ja) 2016-01-14
KR102215545B1 (ko) 2021-02-16
CN104885014A (zh) 2015-09-02
CN104885014B (zh) 2017-05-31
KR20190126457A (ko) 2019-11-11
US20150177625A1 (en) 2015-06-25

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