RU2659967C2 - Способ определения положения подложки в системе литографии, подложка для использования в таком способе и система литографии для выполнения такого способа - Google Patents

Способ определения положения подложки в системе литографии, подложка для использования в таком способе и система литографии для выполнения такого способа Download PDF

Info

Publication number
RU2659967C2
RU2659967C2 RU2015119644A RU2015119644A RU2659967C2 RU 2659967 C2 RU2659967 C2 RU 2659967C2 RU 2015119644 A RU2015119644 A RU 2015119644A RU 2015119644 A RU2015119644 A RU 2015119644A RU 2659967 C2 RU2659967 C2 RU 2659967C2
Authority
RU
Russia
Prior art keywords
optical
region
mark
substrate
optical position
Prior art date
Application number
RU2015119644A
Other languages
English (en)
Russian (ru)
Other versions
RU2015119644A (ru
Inventor
БУР Гвидо ДЕ
Нильс ВЕРГЕР
Original Assignee
МЭППЕР ЛИТОГРАФИ АйПи Б.В.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by МЭППЕР ЛИТОГРАФИ АйПи Б.В. filed Critical МЭППЕР ЛИТОГРАФИ АйПи Б.В.
Publication of RU2015119644A publication Critical patent/RU2015119644A/ru
Application granted granted Critical
Publication of RU2659967C2 publication Critical patent/RU2659967C2/ru

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
RU2015119644A 2012-10-26 2013-10-28 Способ определения положения подложки в системе литографии, подложка для использования в таком способе и система литографии для выполнения такого способа RU2659967C2 (ru)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261718872P 2012-10-26 2012-10-26
US61/718,872 2012-10-26
US201261732445P 2012-12-03 2012-12-03
US61/732,445 2012-12-03
PCT/EP2013/072518 WO2014064290A1 (en) 2012-10-26 2013-10-28 Determining a position of a substrate in lithography

Publications (2)

Publication Number Publication Date
RU2015119644A RU2015119644A (ru) 2016-12-20
RU2659967C2 true RU2659967C2 (ru) 2018-07-04

Family

ID=49515344

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2015119644A RU2659967C2 (ru) 2012-10-26 2013-10-28 Способ определения положения подложки в системе литографии, подложка для использования в таком способе и система литографии для выполнения такого способа

Country Status (9)

Country Link
US (1) US10054863B2 (enExample)
EP (1) EP2912521A1 (enExample)
JP (1) JP6367209B2 (enExample)
KR (2) KR102215545B1 (enExample)
CN (1) CN104885014B (enExample)
NL (1) NL2011681C2 (enExample)
RU (1) RU2659967C2 (enExample)
TW (1) TWI617903B (enExample)
WO (1) WO2014064290A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016015955A1 (en) 2014-07-30 2016-02-04 Asml Netherlands B.V. Alignment sensor and lithographic apparatus background
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
DE102015211879B4 (de) * 2015-06-25 2018-10-18 Carl Zeiss Ag Vermessen von individuellen Daten einer Brille
US10386173B2 (en) * 2015-11-19 2019-08-20 Kris Vossough Integrated sensory systems
KR20170105247A (ko) * 2016-03-09 2017-09-19 삼성전자주식회사 마스크리스 노광 장치 및 이를 이용한 누적 광량의 측정 방법
CN105845596B (zh) * 2016-04-21 2018-12-04 京东方科技集团股份有限公司 一种测试设备及测试方法
KR102488153B1 (ko) * 2016-05-31 2023-01-12 가부시키가이샤 니콘 마크 검출 장치 및 마크 검출 방법, 계측 장치, 노광 장치 및 노광 방법, 및, 디바이스 제조 방법
WO2018033499A1 (en) * 2016-08-15 2018-02-22 Asml Netherlands B.V. Alignment method
US10021372B2 (en) 2016-09-16 2018-07-10 Qualcomm Incorporated Systems and methods for improved depth sensing
US10418290B2 (en) * 2017-02-02 2019-09-17 United Microelectronics Corp. Method of patterning semiconductor device
US10585360B2 (en) 2017-08-25 2020-03-10 Applied Materials, Inc. Exposure system alignment and calibration method
US10670802B2 (en) * 2017-08-31 2020-06-02 University of Pittsburgh—of the Commonwealth System of Higher Education Method of making a distributed optical fiber sensor having enhanced Rayleigh scattering and enhanced temperature stability, and monitoring systems employing same
CN107728236B (zh) * 2017-10-26 2019-07-05 鲁东大学 超构表面元件的制造方法及其产生纳米尺度纵向光斑链的方法
US10483080B1 (en) * 2018-07-17 2019-11-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
US10593509B2 (en) 2018-07-17 2020-03-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
WO2020180470A1 (en) * 2019-03-01 2020-09-10 Applied Materials, Inc. Transparent wafer center finder
US12451324B2 (en) 2020-03-13 2025-10-21 Asml Netherlands B.V. Leveling sensor in multiple charged-particle beam inspection
KR20220044016A (ko) 2020-09-29 2022-04-06 삼성전자주식회사 극자외선(euv) 포토마스크 및 이를 이용한 반도체 장치 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060061743A1 (en) * 2004-09-22 2006-03-23 Asml Netherlands B.V. Lithographic apparatus, alignment system, and device manufacturing method
US7626701B2 (en) * 2004-12-27 2009-12-01 Asml Netherlands B.V. Lithographic apparatus with multiple alignment arrangements and alignment measuring method
US20100123886A1 (en) * 2008-11-18 2010-05-20 Asml Netherlands B.V. Lithographic Apparatus and Device Manufacturing Method
US20120268724A1 (en) * 2011-04-22 2012-10-25 Guido De Boer Lithography system for processing a target, such as a wafer, a method for operating a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4631416A (en) 1983-12-19 1986-12-23 Hewlett-Packard Company Wafer/mask alignment system using diffraction gratings
AT393925B (de) 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
JPH0786121A (ja) 1993-06-30 1995-03-31 Canon Inc ずれ測定方法及びそれを用いた位置検出装置
JPH07248208A (ja) * 1994-03-11 1995-09-26 Nikon Corp 位置合わせ装置
US5827629A (en) 1995-05-11 1998-10-27 Sumitomo Heavy Industries, Ltd. Position detecting method with observation of position detecting marks
JPH1038514A (ja) * 1996-07-23 1998-02-13 Nikon Corp 位置検出装置
KR970028876A (ko) 1995-11-10 1997-06-24 오노 시게오 위치검출장치
EP1184896A4 (en) 1999-01-18 2006-05-10 Nikon Corp MODEL COMPARISON METHOD AND APPARATUS, POSITION IDENTIFICATION METHOD AND APPARATUS, LOCATION JUSTAGEMETHODE AND APPARATUS AND APPARATUS AND ITS MANUFACTURE
EP1111473A3 (en) 1999-12-23 2004-04-21 ASML Netherlands B.V. Lithographic apparatus with vacuum chamber and interferometric alignment system
JP3989697B2 (ja) * 2001-05-30 2007-10-10 富士通株式会社 半導体装置及び半導体装置の位置検出方法
US7116626B1 (en) 2001-11-27 2006-10-03 Inphase Technologies, Inc. Micro-positioning movement of holographic data storage system components
JP4999781B2 (ja) 2002-03-15 2012-08-15 キヤノン株式会社 位置検出装置及び方法、露光装置、デバイス製造方法
JP4165871B2 (ja) 2002-03-15 2008-10-15 キヤノン株式会社 位置検出方法、位置検出装置及び露光装置
TWI251722B (en) * 2002-09-20 2006-03-21 Asml Netherlands Bv Device inspection
EP2204697A3 (en) * 2002-09-20 2012-04-18 ASML Netherlands B.V. Marker structure, lithographic projection apparatus, method for substrate alignment using such a structure, and substrate comprising such marker structure
US7425396B2 (en) 2003-09-30 2008-09-16 Infineon Technologies Ag Method for reducing an overlay error and measurement mark for carrying out the same
JP2005116626A (ja) 2003-10-03 2005-04-28 Canon Inc 位置検出装置及び位置検出方法、並びに露光装置
US7271907B2 (en) 2004-12-23 2007-09-18 Asml Netherlands B.V. Lithographic apparatus with two-dimensional alignment measurement arrangement and two-dimensional alignment measurement method
JP4520429B2 (ja) * 2005-06-01 2010-08-04 エーエスエムエル ネザーランズ ビー．ブイ． 位置合わせ装置への２次元フォトニック結晶の応用
US7863763B2 (en) 2005-11-22 2011-01-04 Asml Netherlands B.V. Binary sinusoidal sub-wavelength gratings as alignment marks
US20080079920A1 (en) 2006-09-29 2008-04-03 Heiko Hommen Wafer exposure device and method
NL2002954A1 (nl) * 2008-06-11 2009-12-14 Asml Netherlands Bv Sub-segmented alignment mark arrangement.
US9696633B2 (en) 2010-04-12 2017-07-04 Asml Netherlands B.V. Substrate handling apparatus and lithographic apparatus
NL2008110A (en) * 2011-02-18 2012-08-21 Asml Netherlands Bv Measuring method, measuring apparatus, lithographic apparatus and device manufacturing method.
NL2008285A (en) * 2011-03-11 2012-09-12 Asml Netherlands Bv Method of controlling a lithographic apparatus, device manufacturing method, lithographic apparatus, computer program product and method of improving a mathematical model of a lithographic process.
NL2008679C2 (en) * 2011-04-22 2013-06-26 Mapper Lithography Ip Bv Position determination in a lithography system using a substrate having a partially reflective position mark.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060061743A1 (en) * 2004-09-22 2006-03-23 Asml Netherlands B.V. Lithographic apparatus, alignment system, and device manufacturing method
US7626701B2 (en) * 2004-12-27 2009-12-01 Asml Netherlands B.V. Lithographic apparatus with multiple alignment arrangements and alignment measuring method
US20100123886A1 (en) * 2008-11-18 2010-05-20 Asml Netherlands B.V. Lithographic Apparatus and Device Manufacturing Method
US20120268724A1 (en) * 2011-04-22 2012-10-25 Guido De Boer Lithography system for processing a target, such as a wafer, a method for operating a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system

Also Published As

Publication number Publication date
TWI617903B (zh) 2018-03-11
NL2011681C2 (en) 2014-05-01
US20150177625A1 (en) 2015-06-25
JP6367209B2 (ja) 2018-08-01
EP2912521A1 (en) 2015-09-02
TW201426208A (zh) 2014-07-01
CN104885014A (zh) 2015-09-02
CN104885014B (zh) 2017-05-31
RU2015119644A (ru) 2016-12-20
WO2014064290A1 (en) 2014-05-01
KR102215545B1 (ko) 2021-02-16
KR20190126457A (ko) 2019-11-11
KR102042212B1 (ko) 2019-11-08
JP2016500845A (ja) 2016-01-14
US10054863B2 (en) 2018-08-21
KR20150070407A (ko) 2015-06-24

Similar Documents

Publication Publication Date Title
RU2659967C2 (ru) Способ определения положения подложки в системе литографии, подложка для использования в таком способе и система литографии для выполнения такого способа
KR100363034B1 (ko) 격자-격자간섭계정렬장치
NL2008679C2 (en) Position determination in a lithography system using a substrate having a partially reflective position mark.
USRE49241E1 (en) Lithography system and method for processing a target, such as a wafer
US9030661B1 (en) Alignment measurement system
JP4043931B2 (ja) ３次元情報取得システム
KR20200007721A (ko) 노광 장치 및 물품 제조 방법
US20070008550A1 (en) Systems and methods for tilt and range measurement
KR102554797B1 (ko) 다중 빔 리소그래피에서의 개개의 빔 패턴 배치 검증
JP2796347B2 (ja) 投影露光方法及びその装置
TWI731523B (zh) 投影物鏡波像差檢測裝置及方法、光刻機
JP3003671B2 (ja) 試料表面の高さ検出方法及びその装置
JP2861927B2 (ja) 光学的多層物体の傾きもしくは高さの検出方法及びその装置
JPS61208220A (ja) 露光装置及び位置合わせ方法
JP4580579B2 (ja) 表面形状測定方法および表面形状測定装置
JPH02167413A (ja) 間隔測定装置
JPH0367103A (ja) 位置検出装置及び方法
JP2006058038A (ja) Ｅｕｖ用シアリング干渉計の回折格子の回折方向測定方法