JP2016212941A5 - - Google Patents

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Publication number
JP2016212941A5
JP2016212941A5 JP2015242007A JP2015242007A JP2016212941A5 JP 2016212941 A5 JP2016212941 A5 JP 2016212941A5 JP 2015242007 A JP2015242007 A JP 2015242007A JP 2015242007 A JP2015242007 A JP 2015242007A JP 2016212941 A5 JP2016212941 A5 JP 2016212941A5
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JP
Japan
Prior art keywords
layer
depositing
mgo
chamber
mgo source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015242007A
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English (en)
Japanese (ja)
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JP2016212941A (ja
Filing date
Publication date
Priority claimed from US14/699,190 external-priority patent/US9890449B2/en
Application filed filed Critical
Publication of JP2016212941A publication Critical patent/JP2016212941A/ja
Publication of JP2016212941A5 publication Critical patent/JP2016212941A5/ja
Pending legal-status Critical Current

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JP2015242007A 2015-04-29 2015-12-11 ＴＭＲセンサのためのＭｇＯバリア層を作製する方法 Pending JP2016212941A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/699,190 2015-04-29
US14/699,190 US9890449B2 (en) 2015-04-29 2015-04-29 Methods of forming MgO barrier layer

Publications (2)

Publication Number Publication Date
JP2016212941A JP2016212941A (ja) 2016-12-15
JP2016212941A5 true JP2016212941A5 (enExample) 2019-01-24

Family

ID=57205539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015242007A Pending JP2016212941A (ja) 2015-04-29 2015-12-11 ＴＭＲセンサのためのＭｇＯバリア層を作製する方法

Country Status (4)

Country Link
US (2) US9890449B2 (enExample)
JP (1) JP2016212941A (enExample)
KR (2) KR20160128895A (enExample)
CN (1) CN106098082A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10229705B2 (en) * 2017-01-24 2019-03-12 International Business Machines Corporation Shorting tolerant tunnel valve head and circuit
KR102470367B1 (ko) * 2017-11-24 2022-11-24 삼성전자주식회사 자기 저항 메모리 소자의 제조 방법
US10837105B1 (en) 2019-01-03 2020-11-17 Seagate Technology Llc Multilayer barrier and method of formation

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07326783A (ja) * 1994-05-30 1995-12-12 Canon Inc 光起電力素子の形成方法及びそれに用いる薄膜製造装置
US5460704A (en) * 1994-09-28 1995-10-24 Motorola, Inc. Method of depositing ferrite film
JP2002314166A (ja) 2001-04-16 2002-10-25 Nec Corp 磁気抵抗効果素子及びその製造方法
US6841395B2 (en) 2002-11-25 2005-01-11 International Business Machines Corporation Method of forming a barrier layer of a tunneling magnetoresistive sensor
US20050029091A1 (en) * 2003-07-21 2005-02-10 Chan Park Apparatus and method for reactive sputtering deposition
KR100628928B1 (ko) 2003-07-21 2006-09-27 한국전기연구원 반응성 스퍼터링 증착장치
US7820020B2 (en) * 2005-02-03 2010-10-26 Applied Materials, Inc. Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas
CN100346524C (zh) * 2005-07-28 2007-10-31 复旦大学 一种原位沉积制备全固态薄膜锂电池的设备和方法
US7780820B2 (en) 2005-11-16 2010-08-24 Headway Technologies, Inc. Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
US7479394B2 (en) * 2005-12-22 2009-01-20 Magic Technologies, Inc. MgO/NiFe MTJ for high performance MRAM application
US7535069B2 (en) * 2006-06-14 2009-05-19 International Business Machines Corporation Magnetic tunnel junction with enhanced magnetic switching characteristics
JP4630856B2 (ja) * 2006-09-29 2011-02-09 株式会社東芝 磁気抵抗効果素子の製造方法
FR2910716B1 (fr) * 2006-12-26 2010-03-26 Commissariat Energie Atomique Dispositif magnetique multicouches, procede pour sa realisation, capteur de champ magnetique, memoire magnetique et porte logique mettant en oeuvre un tel dispositif
JP2008263031A (ja) * 2007-04-11 2008-10-30 Toshiba Corp 磁気抵抗効果素子とその製造方法、磁気抵抗効果素子を備えた磁気記憶装置とその製造方法
US7602033B2 (en) * 2007-05-29 2009-10-13 Headway Technologies, Inc. Low resistance tunneling magnetoresistive sensor with composite inner pinned layer
US7488609B1 (en) 2007-11-16 2009-02-10 Hitachi Global Storage Technologies Netherlands B.V. Method for forming an MgO barrier layer in a tunneling magnetoresistive (TMR) device
US20130134032A1 (en) 2008-06-25 2013-05-30 Canon Anelva Corporation Method of fabricating and apparatus of fabricating tunnel magnetic resistive element
EP2568305B1 (en) * 2011-09-09 2016-03-02 Crocus Technology S.A. Magnetic tunnel junction with an improved tunnel barrier

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