SG10201808864SA - Geometries and patterns for surface texturing to increase deposition retention - Google Patents

Geometries and patterns for surface texturing to increase deposition retention

Info

Publication number
SG10201808864SA
SG10201808864SA SG10201808864SA SG10201808864SA SG10201808864SA SG 10201808864S A SG10201808864S A SG 10201808864SA SG 10201808864S A SG10201808864S A SG 10201808864SA SG 10201808864S A SG10201808864S A SG 10201808864SA SG 10201808864S A SG10201808864S A SG 10201808864SA
Authority
SG
Singapore
Prior art keywords
chamber component
geometries
patterns
retention
surface texturing
Prior art date
Application number
SG10201808864SA
Inventor
Jianqi Wang
William Ming-Ye Lu
Yukari Nishimura
Joseph F Sommers
Sio On Lo
Rajan Balesan
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10201808864SA publication Critical patent/SG10201808864SA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
    • B05C21/005—Masking devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24149—Honeycomb-like
    • Y10T428/24165—Hexagonally shaped cavities
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Chemical Or Physical Treatment Of Fibers (AREA)
  • Micromachines (AREA)

Abstract

GEOMETRIES AND PATTERNS FOR SURFACE TEXTURING TO INCREASE DEPOSITION RETENTION A processing chamber component and method for fabricating the same are provided. The processing chamber component is fabricated in the manner described herein and includes the creation of at least a macro texture on a surface of the chamber component. The macro texture is defined by a plurality of engineered features arranged in a predefined orientation on the surface of the chamber component. In some embodiments, the engineered features prevent formation of a line of sight surface defined between the features to enhance retention of films deposited on the chamber component. Fig.10B
SG10201808864SA 2013-09-17 2014-08-26 Geometries and patterns for surface texturing to increase deposition retention SG10201808864SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/029,108 US9101954B2 (en) 2013-09-17 2013-09-17 Geometries and patterns for surface texturing to increase deposition retention

Publications (1)

Publication Number Publication Date
SG10201808864SA true SG10201808864SA (en) 2018-11-29

Family

ID=52668200

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201808864SA SG10201808864SA (en) 2013-09-17 2014-08-26 Geometries and patterns for surface texturing to increase deposition retention
SG11201601090WA SG11201601090WA (en) 2013-09-17 2014-08-26 Geometries and patterns for surface texturing to increase deposition retention

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201601090WA SG11201601090WA (en) 2013-09-17 2014-08-26 Geometries and patterns for surface texturing to increase deposition retention

Country Status (8)

Country Link
US (1) US9101954B2 (en)
EP (1) EP3047516B1 (en)
JP (1) JP6496739B2 (en)
KR (3) KR102305853B1 (en)
CN (2) CN109599327B (en)
SG (2) SG10201808864SA (en)
TW (1) TWI632592B (en)
WO (1) WO2015041812A1 (en)

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US11114289B2 (en) * 2016-04-27 2021-09-07 Applied Materials, Inc. Non-disappearing anode for use with dielectric deposition
WO2018052533A1 (en) * 2016-09-13 2018-03-22 Applied Materials, Inc. Textured skin for chamber components
US10434604B2 (en) * 2016-10-14 2019-10-08 Applied Materials, Inc. Texturizing a surface without bead blasting
US10655212B2 (en) 2016-12-15 2020-05-19 Honeywell Internatonal Inc Sputter trap having multimodal particle size distribution
US20180211819A1 (en) * 2017-01-20 2018-07-26 Honeywell International Inc. Particle trap for sputtering coil and method of making
CN110249416B (en) 2017-04-07 2023-09-12 应用材料公司 Plasma density control at substrate edge
US20190062908A1 (en) * 2017-08-22 2019-02-28 Suranjan Dabare Semiconductor process kit with nano structures
US11077410B2 (en) * 2017-10-09 2021-08-03 Applied Materials, Inc. Gas injector with baffle
US11183373B2 (en) 2017-10-11 2021-11-23 Honeywell International Inc. Multi-patterned sputter traps and methods of making
US11926157B2 (en) 2021-03-05 2024-03-12 Funai Electric Co., Ltd. Photoresist imaging and development for enhanced nozzle plate adhesion

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Also Published As

Publication number Publication date
CN105531796B (en) 2018-10-12
US9101954B2 (en) 2015-08-11
EP3047516A4 (en) 2017-03-15
CN109599327A (en) 2019-04-09
KR102407620B1 (en) 2022-06-10
KR20220082933A (en) 2022-06-17
KR20160055914A (en) 2016-05-18
EP3047516B1 (en) 2019-10-02
EP3047516A1 (en) 2016-07-27
CN105531796A (en) 2016-04-27
KR102513445B1 (en) 2023-03-22
TWI632592B (en) 2018-08-11
WO2015041812A1 (en) 2015-03-26
US20150079336A1 (en) 2015-03-19
CN109599327B (en) 2023-06-23
SG11201601090WA (en) 2016-04-28
TW201517119A (en) 2015-05-01
KR102305853B1 (en) 2021-09-27
KR20210119557A (en) 2021-10-05
JP6496739B2 (en) 2019-04-03
JP2016532316A (en) 2016-10-13

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