JP2015023105A5 - - Google Patents

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Publication number
JP2015023105A5
JP2015023105A5 JP2013149021A JP2013149021A JP2015023105A5 JP 2015023105 A5 JP2015023105 A5 JP 2015023105A5 JP 2013149021 A JP2013149021 A JP 2013149021A JP 2013149021 A JP2013149021 A JP 2013149021A JP 2015023105 A5 JP2015023105 A5 JP 2015023105A5
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JP
Japan
Prior art keywords
film
processing
processed
wavelength
wafer
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JP2013149021A
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English (en)
Japanese (ja)
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JP2015023105A (ja
JP6132688B2 (ja
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Priority to JP2013149021A priority Critical patent/JP6132688B2/ja
Priority claimed from JP2013149021A external-priority patent/JP6132688B2/ja
Priority to TW103101818A priority patent/TWI549185B/zh
Priority to KR1020140013273A priority patent/KR101582208B1/ko
Priority to US14/183,562 priority patent/US9190336B2/en
Publication of JP2015023105A publication Critical patent/JP2015023105A/ja
Publication of JP2015023105A5 publication Critical patent/JP2015023105A5/ja
Application granted granted Critical
Publication of JP6132688B2 publication Critical patent/JP6132688B2/ja
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JP2013149021A 2013-07-18 2013-07-18 プラズマ処理装置及びプラズマ処理方法 Active JP6132688B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013149021A JP6132688B2 (ja) 2013-07-18 2013-07-18 プラズマ処理装置及びプラズマ処理方法
TW103101818A TWI549185B (zh) 2013-07-18 2014-01-17 Plasma processing device and plasma processing method
KR1020140013273A KR101582208B1 (ko) 2013-07-18 2014-02-05 플라즈마 처리 장치 및 플라즈마 처리 방법
US14/183,562 US9190336B2 (en) 2013-07-18 2014-02-19 Plasma processing apparatus and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013149021A JP6132688B2 (ja) 2013-07-18 2013-07-18 プラズマ処理装置及びプラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2015023105A JP2015023105A (ja) 2015-02-02
JP2015023105A5 true JP2015023105A5 (enExample) 2016-09-23
JP6132688B2 JP6132688B2 (ja) 2017-05-24

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ID=52343896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013149021A Active JP6132688B2 (ja) 2013-07-18 2013-07-18 プラズマ処理装置及びプラズマ処理方法

Country Status (4)

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US (1) US9190336B2 (enExample)
JP (1) JP6132688B2 (enExample)
KR (1) KR101582208B1 (enExample)
TW (1) TWI549185B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6523732B2 (ja) * 2015-03-26 2019-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6553398B2 (ja) 2015-05-12 2019-07-31 株式会社日立ハイテクノロジーズ プラズマ処理装置、データ処理装置およびデータ処理方法
JP6504915B2 (ja) * 2015-05-25 2019-04-24 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6673173B2 (ja) * 2016-12-12 2020-03-25 三菱電機株式会社 半導体装置の製造方法
JP7451540B2 (ja) * 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
JP6762401B2 (ja) * 2019-04-25 2020-09-30 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
KR102510305B1 (ko) * 2020-03-11 2023-03-17 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
US12062530B2 (en) * 2020-06-25 2024-08-13 Hitachi High-Tech Corporation Vacuum processing apparatus and vacuum processing method
US12381071B2 (en) * 2020-09-17 2025-08-05 Hitachi High-Tech Corporation Plasma processing method and plasma processing apparatus
CN114765112B (zh) * 2021-01-11 2025-05-27 华邦电子股份有限公司 蚀刻系统及其蚀刻方法
US11443928B2 (en) * 2021-01-31 2022-09-13 Winbond Electronics Corp. Etching apparatus and etching method thereof
JP7696258B2 (ja) * 2021-09-03 2025-06-20 東京エレクトロン株式会社 成膜システムおよび成膜方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413867B1 (en) * 1999-12-23 2002-07-02 Applied Materials, Inc. Film thickness control using spectral interferometry
US6903826B2 (en) * 2001-09-06 2005-06-07 Hitachi, Ltd. Method and apparatus for determining endpoint of semiconductor element fabricating process
JP3694662B2 (ja) 2001-09-17 2005-09-14 株式会社日立製作所 半導体素子製造プロセスにおける膜の処理量測定方法と装置、及びそれを用いた被処理材の処理方法と装置、及びそれを用いたプロセスの終点判定方法と装置
KR100426988B1 (ko) 2001-11-08 2004-04-14 삼성전자주식회사 반도체 제조장비의 식각 종말점 검출장치 및 그에 따른검출방법
JP4349848B2 (ja) * 2003-06-12 2009-10-21 パナソニック株式会社 終点検出方法および終点検出装置
JP2008218898A (ja) * 2007-03-07 2008-09-18 Hitachi High-Technologies Corp プラズマ処理装置
KR100945889B1 (ko) * 2009-05-08 2010-03-05 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 처리의 판정방법
JP5199981B2 (ja) 2009-11-04 2013-05-15 東京エレクトロン株式会社 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置

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