KR101582208B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

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KR101582208B1
KR101582208B1 KR1020140013273A KR20140013273A KR101582208B1 KR 101582208 B1 KR101582208 B1 KR 101582208B1 KR 1020140013273 A KR1020140013273 A KR 1020140013273A KR 20140013273 A KR20140013273 A KR 20140013273A KR 101582208 B1 KR101582208 B1 KR 101582208B1
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film
processed
wavelength
mask
pattern
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KR20150010559A (ko
Inventor
고스케 후쿠치
시게루 나카모토
다테히토 우스이
사토미 이노우에
고사 히로타
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020140013273A 2013-07-18 2014-02-05 플라즈마 처리 장치 및 플라즈마 처리 방법 Active KR101582208B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-149021 2013-07-18
JP2013149021A JP6132688B2 (ja) 2013-07-18 2013-07-18 プラズマ処理装置及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
KR20150010559A KR20150010559A (ko) 2015-01-28
KR101582208B1 true KR101582208B1 (ko) 2016-01-04

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Application Number Title Priority Date Filing Date
KR1020140013273A Active KR101582208B1 (ko) 2013-07-18 2014-02-05 플라즈마 처리 장치 및 플라즈마 처리 방법

Country Status (4)

Country Link
US (1) US9190336B2 (enExample)
JP (1) JP6132688B2 (enExample)
KR (1) KR101582208B1 (enExample)
TW (1) TWI549185B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6523732B2 (ja) * 2015-03-26 2019-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6553398B2 (ja) 2015-05-12 2019-07-31 株式会社日立ハイテクノロジーズ プラズマ処理装置、データ処理装置およびデータ処理方法
JP6504915B2 (ja) * 2015-05-25 2019-04-24 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6673173B2 (ja) * 2016-12-12 2020-03-25 三菱電機株式会社 半導体装置の製造方法
JP7451540B2 (ja) * 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
JP6762401B2 (ja) * 2019-04-25 2020-09-30 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
KR102510305B1 (ko) * 2020-03-11 2023-03-17 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
US12062530B2 (en) * 2020-06-25 2024-08-13 Hitachi High-Tech Corporation Vacuum processing apparatus and vacuum processing method
US12381071B2 (en) * 2020-09-17 2025-08-05 Hitachi High-Tech Corporation Plasma processing method and plasma processing apparatus
CN114765112B (zh) * 2021-01-11 2025-05-27 华邦电子股份有限公司 蚀刻系统及其蚀刻方法
US11443928B2 (en) * 2021-01-31 2022-09-13 Winbond Electronics Corp. Etching apparatus and etching method thereof
JP7696258B2 (ja) * 2021-09-03 2025-06-20 東京エレクトロン株式会社 成膜システムおよび成膜方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030043383A1 (en) 2001-09-06 2003-03-06 Tatehito Usui Method and apparatus for determining endpoint of semiconductor element fabricating process and method and apparatus for processing member to be processed
US20030085198A1 (en) 2001-11-08 2003-05-08 Yi Hun Jung Method of detecting etching process end point in semiconductor fabricating equipment and detector therefor
US20080216956A1 (en) 2007-03-07 2008-09-11 Shigeru Nakamoto Plasma processing apparatus
KR100945889B1 (ko) * 2009-05-08 2010-03-05 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 처리의 판정방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413867B1 (en) * 1999-12-23 2002-07-02 Applied Materials, Inc. Film thickness control using spectral interferometry
JP3694662B2 (ja) 2001-09-17 2005-09-14 株式会社日立製作所 半導体素子製造プロセスにおける膜の処理量測定方法と装置、及びそれを用いた被処理材の処理方法と装置、及びそれを用いたプロセスの終点判定方法と装置
JP4349848B2 (ja) * 2003-06-12 2009-10-21 パナソニック株式会社 終点検出方法および終点検出装置
JP5199981B2 (ja) 2009-11-04 2013-05-15 東京エレクトロン株式会社 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030043383A1 (en) 2001-09-06 2003-03-06 Tatehito Usui Method and apparatus for determining endpoint of semiconductor element fabricating process and method and apparatus for processing member to be processed
US20030085198A1 (en) 2001-11-08 2003-05-08 Yi Hun Jung Method of detecting etching process end point in semiconductor fabricating equipment and detector therefor
US20080216956A1 (en) 2007-03-07 2008-09-11 Shigeru Nakamoto Plasma processing apparatus
KR100945889B1 (ko) * 2009-05-08 2010-03-05 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 처리의 판정방법

Also Published As

Publication number Publication date
TWI549185B (zh) 2016-09-11
KR20150010559A (ko) 2015-01-28
JP2015023105A (ja) 2015-02-02
TW201505094A (zh) 2015-02-01
JP6132688B2 (ja) 2017-05-24
US20150024521A1 (en) 2015-01-22
US9190336B2 (en) 2015-11-17

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