JP2014514727A5 - - Google Patents

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Publication number
JP2014514727A5
JP2014514727A5 JP2013554662A JP2013554662A JP2014514727A5 JP 2014514727 A5 JP2014514727 A5 JP 2014514727A5 JP 2013554662 A JP2013554662 A JP 2013554662A JP 2013554662 A JP2013554662 A JP 2013554662A JP 2014514727 A5 JP2014514727 A5 JP 2014514727A5
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JP
Japan
Prior art keywords
etch
measurement
stage
etching
optical
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JP2013554662A
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English (en)
Japanese (ja)
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JP2014514727A (ja
JP6019043B2 (ja
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Priority claimed from US13/029,349 external-priority patent/US8193007B1/en
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Publication of JP2014514727A5 publication Critical patent/JP2014514727A5/ja
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JP2013554662A 2011-02-17 2012-02-17 光学計測及びセンサ装置を用いるエッチングプロセス制御 Active JP6019043B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/029,349 2011-02-17
US13/029,349 US8193007B1 (en) 2011-02-17 2011-02-17 Etch process control using optical metrology and sensor devices
PCT/US2012/025746 WO2012112959A1 (en) 2011-02-17 2012-02-17 Etch process control using optical metrology and sensor devices

Publications (3)

Publication Number Publication Date
JP2014514727A JP2014514727A (ja) 2014-06-19
JP2014514727A5 true JP2014514727A5 (enExample) 2015-04-09
JP6019043B2 JP6019043B2 (ja) 2016-11-02

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ID=46148020

Family Applications (1)

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JP2013554662A Active JP6019043B2 (ja) 2011-02-17 2012-02-17 光学計測及びセンサ装置を用いるエッチングプロセス制御

Country Status (5)

Country Link
US (1) US8193007B1 (enExample)
JP (1) JP6019043B2 (enExample)
KR (2) KR20170107094A (enExample)
TW (1) TWI464818B (enExample)
WO (1) WO2012112959A1 (enExample)

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US8445296B2 (en) * 2011-07-22 2013-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and methods for end point determination in reactive ion etching
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US9875946B2 (en) 2013-04-19 2018-01-23 Kla-Tencor Corporation On-device metrology
KR102242414B1 (ko) 2013-10-02 2021-04-21 에이에스엠엘 네델란즈 비.브이. 산업 공정과 관련된 진단 정보를 얻는 방법 및 장치
US10217681B1 (en) * 2014-08-06 2019-02-26 American Air Liquide, Inc. Gases for low damage selective silicon nitride etching
US20160240366A1 (en) * 2015-02-17 2016-08-18 Infineon Technologies Ag Processing of Semiconductor Devices
US10386829B2 (en) * 2015-09-18 2019-08-20 Kla-Tencor Corporation Systems and methods for controlling an etch process
US10192763B2 (en) * 2015-10-05 2019-01-29 Applied Materials, Inc. Methodology for chamber performance matching for semiconductor equipment
US10372114B2 (en) * 2016-10-21 2019-08-06 Kla-Tencor Corporation Quantifying and reducing total measurement uncertainty
WO2018163396A1 (ja) * 2017-03-10 2018-09-13 三菱電機株式会社 半導体製造装置および半導体製造方法
US10784174B2 (en) * 2017-10-13 2020-09-22 Lam Research Corporation Method and apparatus for determining etch process parameters
US11164768B2 (en) * 2018-04-27 2021-11-02 Kla Corporation Process-induced displacement characterization during semiconductor production
JP2020181959A (ja) 2019-04-26 2020-11-05 東京エレクトロン株式会社 学習方法、管理装置および管理プログラム
JP7413081B2 (ja) * 2020-02-28 2024-01-15 東京エレクトロン株式会社 基板処理システム
GB202010471D0 (en) * 2020-07-08 2020-08-19 Univ Exeter Control of processing equipment
US20230163001A1 (en) * 2021-11-23 2023-05-25 Applied Materials, Inc. Method to eliminate first wafer effects on semiconductor process chambers
US12106984B2 (en) * 2021-11-23 2024-10-01 Applied Materials, Inc. Accelerating preventative maintenance recovery and recipe optimizing using machine-learning based algorithm
US12400888B2 (en) * 2022-03-31 2025-08-26 Tokyo Electron Limited Data fusion of multiple sensors
CN120019479A (zh) * 2023-09-14 2025-05-16 株式会社日立高新技术 等离子处理装置以及等离子处理方法

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US5288367A (en) 1993-02-01 1994-02-22 International Business Machines Corporation End-point detection
US5658423A (en) 1995-11-27 1997-08-19 International Business Machines Corporation Monitoring and controlling plasma processes via optical emission using principal component analysis
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