JP2016181687A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016181687A5 JP2016181687A5 JP2016053235A JP2016053235A JP2016181687A5 JP 2016181687 A5 JP2016181687 A5 JP 2016181687A5 JP 2016053235 A JP2016053235 A JP 2016053235A JP 2016053235 A JP2016053235 A JP 2016053235A JP 2016181687 A5 JP2016181687 A5 JP 2016181687A5
- Authority
- JP
- Japan
- Prior art keywords
- precursor gas
- processing chamber
- pecvd
- electrode
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims description 90
- 239000002243 precursor Substances 0.000 claims description 82
- 238000000034 method Methods 0.000 claims description 67
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 55
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 20
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 18
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 18
- 239000010937 tungsten Substances 0.000 claims description 18
- 229910052721 tungsten Inorganic materials 0.000 claims description 18
- 239000012159 carrier gas Substances 0.000 claims description 16
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 12
- 239000004215 Carbon black (E152) Substances 0.000 claims description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 12
- 229930195733 hydrocarbon Natural products 0.000 claims description 12
- 150000002430 hydrocarbons Chemical class 0.000 claims description 12
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 8
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- PPJPTAQKIFHZQU-UHFFFAOYSA-N bis(tert-butylimino)tungsten;dimethylazanide Chemical compound C[N-]C.C[N-]C.CC(C)(C)N=[W]=NC(C)(C)C PPJPTAQKIFHZQU-UHFFFAOYSA-N 0.000 claims description 4
- -1 ethylene, propylene, butane Chemical class 0.000 claims description 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000002159 nanocrystal Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/666,953 | 2015-03-24 | ||
| US14/666,953 US9875890B2 (en) | 2015-03-24 | 2015-03-24 | Deposition of metal dielectric film for hardmasks |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016181687A JP2016181687A (ja) | 2016-10-13 |
| JP2016181687A5 true JP2016181687A5 (enExample) | 2019-04-25 |
| JP6934705B2 JP6934705B2 (ja) | 2021-09-15 |
Family
ID=56975637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016053235A Active JP6934705B2 (ja) | 2015-03-24 | 2016-03-17 | ハードマスクのための金属誘電体膜の蒸着 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9875890B2 (enExample) |
| JP (1) | JP6934705B2 (enExample) |
| KR (1) | KR102500931B1 (enExample) |
| CN (2) | CN116013767A (enExample) |
| TW (1) | TWI717336B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9928994B2 (en) * | 2015-02-03 | 2018-03-27 | Lam Research Corporation | Methods for decreasing carbon-hydrogen content of amorphous carbon hardmask films |
| WO2018144198A1 (en) * | 2017-02-01 | 2018-08-09 | Applied Materials, Inc. | Boron doped tungsten carbide for hardmask applications |
| CN116978782A (zh) * | 2017-05-12 | 2023-10-31 | 应用材料公司 | 在基板和腔室部件上沉积金属硅化物层 |
| KR102549542B1 (ko) | 2017-09-12 | 2023-06-29 | 삼성전자주식회사 | 금속 하드마스크 및 반도체 소자의 제조 방법 |
| TWI713961B (zh) * | 2018-01-15 | 2020-12-21 | 美商應用材料股份有限公司 | 針對碳化鎢膜改善附著及缺陷之技術 |
| US20200098562A1 (en) * | 2018-09-26 | 2020-03-26 | Lam Research Corporation | Dual frequency silane-based silicon dioxide deposition to minimize film instability |
| US11502160B2 (en) * | 2020-03-02 | 2022-11-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for forming metal-insulator-metal capacitors |
| KR102350978B1 (ko) * | 2020-08-20 | 2022-01-13 | 이만호 | 다중 전극 이온 빔 발생 장치 및 이를 이용한 표면 개질 방법 |
| US11421324B2 (en) * | 2020-10-21 | 2022-08-23 | Applied Materials, Inc. | Hardmasks and processes for forming hardmasks by plasma-enhanced chemical vapor deposition |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62222074A (ja) * | 1986-03-20 | 1987-09-30 | Toshiba Corp | セラミツクスが被着された部材の製造方法 |
| JPH06173009A (ja) * | 1992-12-04 | 1994-06-21 | Sumitomo Electric Ind Ltd | 耐摩耗性に優れた被覆超硬合金及びその製造方法 |
| KR100603554B1 (ko) * | 1999-02-11 | 2006-07-24 | 하다이드 리미티드 | 텅스텐 카바이드 코팅 및 그 제조 방법 |
| AU2002241757A1 (en) * | 2000-11-02 | 2002-06-11 | Composite Tool Company, Inc. | High strength alloys and methods for making same |
| US6951804B2 (en) * | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| WO2003025243A2 (en) * | 2001-09-14 | 2003-03-27 | Asm International N.V. | Metal nitride deposition by ald using gettering reactant |
| US7560581B2 (en) * | 2002-07-12 | 2009-07-14 | President And Fellows Of Harvard College | Vapor deposition of tungsten nitride |
| US20060240187A1 (en) * | 2005-01-27 | 2006-10-26 | Applied Materials, Inc. | Deposition of an intermediate catalytic layer on a barrier layer for copper metallization |
| US7897217B2 (en) * | 2005-11-18 | 2011-03-01 | Tokyo Electron Limited | Method and system for performing plasma enhanced atomic layer deposition |
| US7645484B2 (en) * | 2006-03-31 | 2010-01-12 | Tokyo Electron Limited | Method of forming a metal carbide or metal carbonitride film having improved adhesion |
| WO2007140813A1 (en) * | 2006-06-02 | 2007-12-13 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing |
| US8268409B2 (en) * | 2006-10-25 | 2012-09-18 | Asm America, Inc. | Plasma-enhanced deposition of metal carbide films |
| US7611751B2 (en) * | 2006-11-01 | 2009-11-03 | Asm America, Inc. | Vapor deposition of metal carbide films |
| US7666474B2 (en) * | 2008-05-07 | 2010-02-23 | Asm America, Inc. | Plasma-enhanced pulsed deposition of metal carbide films |
| KR101559425B1 (ko) | 2009-01-16 | 2015-10-13 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| US8076241B2 (en) * | 2009-09-30 | 2011-12-13 | Tokyo Electron Limited | Methods for multi-step copper plating on a continuous ruthenium film in recessed features |
| JP2012204644A (ja) * | 2011-03-25 | 2012-10-22 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
| JP5959991B2 (ja) | 2011-11-25 | 2016-08-02 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
| US8623468B2 (en) * | 2012-01-05 | 2014-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of fabricating metal hard masks |
| WO2013133110A1 (ja) * | 2012-03-09 | 2013-09-12 | 株式会社ユーテック | Ｃｖｄ装置 |
| KR20140028992A (ko) * | 2012-08-31 | 2014-03-10 | 에스케이하이닉스 주식회사 | 텅스텐 게이트전극을 구비한 반도체장치 및 그 제조 방법 |
| US20140113453A1 (en) * | 2012-10-24 | 2014-04-24 | Lam Research Corporation | Tungsten carbide coated metal component of a plasma reactor chamber and method of coating |
| JP6167263B2 (ja) * | 2013-03-06 | 2017-07-26 | 国立大学法人山口大学 | 窒素含有アモルファスシリコンカーバイドからなるｎ型半導体及びその製造方法 |
| JP6574547B2 (ja) * | 2013-12-12 | 2019-09-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
-
2015
- 2015-03-24 US US14/666,953 patent/US9875890B2/en active Active
-
2016
- 2016-03-04 TW TW105106608A patent/TWI717336B/zh active
- 2016-03-17 JP JP2016053235A patent/JP6934705B2/ja active Active
- 2016-03-21 KR KR1020160033121A patent/KR102500931B1/ko active Active
- 2016-03-23 CN CN202211640544.5A patent/CN116013767A/zh active Pending
- 2016-03-23 CN CN201610168111.2A patent/CN106024605A/zh active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2016181687A5 (enExample) | ||
| US9928994B2 (en) | Methods for decreasing carbon-hydrogen content of amorphous carbon hardmask films | |
| US9520295B2 (en) | Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems | |
| JP2016164304A5 (enExample) | ||
| US10096475B1 (en) | System and method for depositing a homogenous interface for PECVD metal-doped carbon hardmasks | |
| US9875890B2 (en) | Deposition of metal dielectric film for hardmasks | |
| CN110098100B (zh) | 用分子反应性清扫气体改善dc偏置的缺陷控制和稳定性 | |
| US9852901B2 (en) | Systems and methods for reducing backside deposition and mitigating thickness changes at substrate edges | |
| WO2021067118A1 (en) | Selective graphene deposition using remote plasma | |
| US20250022709A1 (en) | Plasma-enhanced chemical vapor deposition of carbon hard-mask | |
| US20250096036A1 (en) | Selective deposition of graphene on cobalt-capped copper dual damascene interconnect | |
| US20240395544A1 (en) | Deposition and treatment of nano-graphene at low temperatures | |
| JP2013001999A (ja) | 化学蒸着装置 | |
| US10662522B1 (en) | Thermal metal chemical vapor deposition process |