JP2016164967A5 - - Google Patents
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- Publication number
- JP2016164967A5 JP2016164967A5 JP2015194572A JP2015194572A JP2016164967A5 JP 2016164967 A5 JP2016164967 A5 JP 2016164967A5 JP 2015194572 A JP2015194572 A JP 2015194572A JP 2015194572 A JP2015194572 A JP 2015194572A JP 2016164967 A5 JP2016164967 A5 JP 2016164967A5
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- mos transistor
- concentration
- channel mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000012535 impurity Substances 0.000 claims 52
- 239000004065 semiconductor Substances 0.000 claims 28
- 229910052581 Si3N4 Inorganic materials 0.000 claims 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 25
- 230000015572 biosynthetic process Effects 0.000 claims 19
- 238000000034 method Methods 0.000 claims 15
- 238000005468 ion implantation Methods 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 8
- 229910052698 phosphorus Inorganic materials 0.000 claims 8
- 239000011574 phosphorus Substances 0.000 claims 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 7
- 229910052796 boron Inorganic materials 0.000 claims 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 5
- 229910052785 arsenic Inorganic materials 0.000 claims 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 238000009792 diffusion process Methods 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 230000005684 electric field Effects 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105104138A TWI675479B (zh) | 2015-02-25 | 2016-02-05 | 半導體積體電路裝置及其製造方法 |
| KR1020160020778A KR20160103937A (ko) | 2015-02-25 | 2016-02-22 | 반도체 집적회로 장치 및 그 제조 방법 |
| US15/050,807 US9698147B2 (en) | 2015-02-25 | 2016-02-23 | Semiconductor integrated circuit device having low and high withstanding-voltage MOS transistors |
| CN201610103191.3A CN105914208B (zh) | 2015-02-25 | 2016-02-25 | 半导体集成电路装置及其制造方法 |
| US15/598,670 US9972625B2 (en) | 2015-02-25 | 2017-05-18 | Method of manufacturing semiconductor integrated circuit device |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015035501 | 2015-02-25 | ||
| JP2015035501 | 2015-02-25 | ||
| JP2015037330 | 2015-02-26 | ||
| JP2015037330 | 2015-02-26 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016164967A JP2016164967A (ja) | 2016-09-08 |
| JP2016164967A5 true JP2016164967A5 (enrdf_load_stackoverflow) | 2018-09-20 |
| JP6595872B2 JP6595872B2 (ja) | 2019-10-23 |
Family
ID=56876760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015194572A Expired - Fee Related JP6595872B2 (ja) | 2015-02-25 | 2015-09-30 | 半導体集積回路装置およびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6595872B2 (enrdf_load_stackoverflow) |
| KR (1) | KR20160103937A (enrdf_load_stackoverflow) |
| TW (1) | TWI675479B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6775369B2 (ja) * | 2016-09-28 | 2020-10-28 | エイブリック株式会社 | 半導体装置 |
| CN115547931B (zh) * | 2022-12-05 | 2023-02-14 | 合肥晶合集成电路股份有限公司 | 半导体器件的制作方法、半导体器件以及晶体管 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5080032B2 (ja) | 2006-06-27 | 2012-11-21 | セイコーインスツル株式会社 | 半導体集積回路装置 |
| JP2010045130A (ja) * | 2008-08-11 | 2010-02-25 | Nec Electronics Corp | 半導体装置および半導体装置の製造方法 |
| JP5449942B2 (ja) * | 2009-09-24 | 2014-03-19 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
-
2015
- 2015-09-30 JP JP2015194572A patent/JP6595872B2/ja not_active Expired - Fee Related
-
2016
- 2016-02-05 TW TW105104138A patent/TWI675479B/zh not_active IP Right Cessation
- 2016-02-22 KR KR1020160020778A patent/KR20160103937A/ko not_active Withdrawn
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