TWI675479B - 半導體積體電路裝置及其製造方法 - Google Patents
半導體積體電路裝置及其製造方法 Download PDFInfo
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- TWI675479B TWI675479B TW105104138A TW105104138A TWI675479B TW I675479 B TWI675479 B TW I675479B TW 105104138 A TW105104138 A TW 105104138A TW 105104138 A TW105104138 A TW 105104138A TW I675479 B TWI675479 B TW I675479B
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- 238000000034 method Methods 0.000 claims abstract description 104
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Landscapes
- Engineering & Computer Science (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015035501 | 2015-02-25 | ||
| JP2015-035501 | 2015-02-25 | ||
| JP2015037330 | 2015-02-26 | ||
| JP2015-037330 | 2015-02-26 | ||
| JP2015194572A JP6595872B2 (ja) | 2015-02-25 | 2015-09-30 | 半導体集積回路装置およびその製造方法 |
| JP2015-194572 | 2015-09-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201705477A TW201705477A (zh) | 2017-02-01 |
| TWI675479B true TWI675479B (zh) | 2019-10-21 |
Family
ID=56876760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105104138A TWI675479B (zh) | 2015-02-25 | 2016-02-05 | 半導體積體電路裝置及其製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6595872B2 (enrdf_load_stackoverflow) |
| KR (1) | KR20160103937A (enrdf_load_stackoverflow) |
| TW (1) | TWI675479B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6775369B2 (ja) * | 2016-09-28 | 2020-10-28 | エイブリック株式会社 | 半導体装置 |
| CN115547931B (zh) * | 2022-12-05 | 2023-02-14 | 合肥晶合集成电路股份有限公司 | 半导体器件的制作方法、半导体器件以及晶体管 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100032754A1 (en) * | 2008-08-11 | 2010-02-11 | Nec Electronics Corporation | Semiconductor device and method of manufacturing the semiconductor device |
| US8541279B2 (en) * | 2009-09-24 | 2013-09-24 | Seiko Instruments Inc. | Method for manufacturing a semiconductor device having high-voltage and low-voltage transistors |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5080032B2 (ja) | 2006-06-27 | 2012-11-21 | セイコーインスツル株式会社 | 半導体集積回路装置 |
-
2015
- 2015-09-30 JP JP2015194572A patent/JP6595872B2/ja not_active Expired - Fee Related
-
2016
- 2016-02-05 TW TW105104138A patent/TWI675479B/zh not_active IP Right Cessation
- 2016-02-22 KR KR1020160020778A patent/KR20160103937A/ko not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100032754A1 (en) * | 2008-08-11 | 2010-02-11 | Nec Electronics Corporation | Semiconductor device and method of manufacturing the semiconductor device |
| US8541279B2 (en) * | 2009-09-24 | 2013-09-24 | Seiko Instruments Inc. | Method for manufacturing a semiconductor device having high-voltage and low-voltage transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201705477A (zh) | 2017-02-01 |
| JP6595872B2 (ja) | 2019-10-23 |
| JP2016164967A (ja) | 2016-09-08 |
| KR20160103937A (ko) | 2016-09-02 |
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| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |