JP2016162786A5 - - Google Patents
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- Publication number
- JP2016162786A5 JP2016162786A5 JP2015037512A JP2015037512A JP2016162786A5 JP 2016162786 A5 JP2016162786 A5 JP 2016162786A5 JP 2015037512 A JP2015037512 A JP 2015037512A JP 2015037512 A JP2015037512 A JP 2015037512A JP 2016162786 A5 JP2016162786 A5 JP 2016162786A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- forming
- insulating film
- semiconductor device
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 35
- 230000002093 peripheral effect Effects 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- 229910002601 GaN Inorganic materials 0.000 claims 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910004205 SiNX Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 238000004381 surface treatment Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015037512A JP6344264B2 (ja) | 2015-02-27 | 2015-02-27 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015037512A JP6344264B2 (ja) | 2015-02-27 | 2015-02-27 | 半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016162786A JP2016162786A (ja) | 2016-09-05 |
| JP2016162786A5 true JP2016162786A5 (enrdf_load_stackoverflow) | 2017-06-22 |
| JP6344264B2 JP6344264B2 (ja) | 2018-06-20 |
Family
ID=56847513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015037512A Active JP6344264B2 (ja) | 2015-02-27 | 2015-02-27 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6344264B2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111403566B (zh) * | 2020-03-27 | 2024-12-10 | 天津赛米卡尔科技有限公司 | 具有侧壁场板的发光二极管器件结构及其制备方法 |
| WO2025062300A1 (en) * | 2023-09-22 | 2025-03-27 | Silanna UV Technologies Pte Ltd | Semiconductor device with layer transfer |
| WO2025062235A2 (en) * | 2023-09-22 | 2025-03-27 | Silanna UV Technologies Pte Ltd | Semiconductor device |
| CN118263335B (zh) * | 2024-03-25 | 2025-02-11 | 中国科学技术大学 | 一种氧化镓二极管及其制备方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08139341A (ja) * | 1994-11-11 | 1996-05-31 | Murata Mfg Co Ltd | ショットキ−バリアダイオ−ド |
| WO2010016388A1 (ja) * | 2008-08-05 | 2010-02-11 | 住友電気工業株式会社 | ショットキーバリアダイオードおよびショットキーバリアダイオードの製造方法 |
| JP6107430B2 (ja) * | 2012-06-08 | 2017-04-05 | 豊田合成株式会社 | 半導体装置 |
| JP6241099B2 (ja) * | 2013-07-17 | 2017-12-06 | 豊田合成株式会社 | 半導体装置 |
-
2015
- 2015-02-27 JP JP2015037512A patent/JP6344264B2/ja active Active
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