JP2016157926A - 回路基板および回路基板の製造方法 - Google Patents
回路基板および回路基板の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000012792 core layer Substances 0.000 claims abstract description 114
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 19
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 19
- 239000010439 graphite Substances 0.000 claims abstract description 19
- 239000007769 metal material Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 9
- 230000000149 penetrating effect Effects 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 41
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229960004592 isopropanol Drugs 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- HDYFAPRLDWYIBU-UHFFFAOYSA-N 1-silylprop-2-en-1-one Chemical compound [SiH3]C(=O)C=C HDYFAPRLDWYIBU-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910021386 carbon form Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
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- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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Abstract
Description
11、11´、11´´ 第1コア層
12 第2コア層
13 第3コア層
14 絶縁膜
15 プライマー層
100、200 回路基板
121 第1上部絶縁層
121´ 第1下部絶縁層
131 第2上部絶縁層
131´ 第2下部絶縁層
H1 第1スルーホール
H2 第2スルーホール
TVH スルービアホール
VH ビアホール
TV1、TV2 スルービア
V1、V2、V1´、V2´ ビア
SB 半田ボール
300 第1電子部品
500 第2電子部品
800 付加基板
Claims (13)
- グラファイト(graphite)またはグラフェン(graphene)材質からなり、一面と他面との間を貫通するスルーホールが形成された第1コア層と、
金属材質からなり、前記第1コア層の一面および他面にそれぞれ形成された第2コア層および第3コア層と、を含むコア部を含み、
前記スルーホールには、前記第2コア層および前記第3コア層をなす前記金属材質が充填されている回路基板。 - 前記コア部の一面と他面との間を貫通するスルービアが前記スルーホールの内側を貫通する、請求項1に記載の回路基板。
- 前記コア部の一面または他面に回路パターンが備えられており、前記スルービアの外面と前記コア部の表面との間、および前記回路パターンの外面と前記コア部の表面との間に絶縁膜が備えられる、請求項2に記載の回路基板。
- 前記第2コア層または前記第3コア層を貫通するビアが備えられており、前記ビアの表面と前記コア部との間に絶縁膜が備えられる、請求項1から3の何れか一項に記載の回路基板。
- 前記スルーホールは、前記スルービアが内側を貫通する第1スルーホールと、前記スルービアが内側を貫通しない第2スルーホールと、を含む、請求項2または3に記載の回路基板。
- 前記第1コア層の外周縁側壁の少なくとも一部が前記第2コア層および前記第3コア層の外部に露出される、請求項1から5の何れか一項に記載の回路基板。
- 前記第1コア層の外周縁側壁の少なくとも一部が前記第2コア層および前記第3コア層をなす金属材質で覆われる、請求項1から6の何れか一項に記載の回路基板。
- 前記コア部の一面と他面との間を貫通するキャビティ(cavity)が備えられており、前記キャビティの内部に第1電子部品の少なくとも一部が挿入される、請求項1から7の何れか一項に記載の回路基板。
- 前記第1電子部品の外周縁側壁の少なくとも一部が絶縁膜を挟んで前記キャビティに接触される、請求項8に記載の回路基板。
- 前記第1コア層の表面にプライマー層が備えられる、請求項1から9の何れか一項に記載の回路基板。
- 前記第1コア層は、グラファイトまたはグラフェンの表面にプライマー層が備えられてなる単位体が積層されてなる、請求項1から10の何れか一項に記載の回路基板。
- グラファイト(graphite)またはグラフェン(graphene)材質からなり、一面と他面との間を貫通するスルーホールが形成された第1コア層を提供する段階と、
前記スルーホールの内部に金属材が充填されるように前記第1コア層の一面および他面に前記金属材を提供して第2コア層および第3コア層を形成することで、コア部を形成する段階と、
前記コア部の一面と他面との間を貫通し、且つ前記スルーホールの内側を通過するスルービアホールを形成する段階と、
前記スルービアホールの内側壁に絶縁膜を形成する段階と、
前記スルービアホールに導体を充填してスルービアを形成する段階と、を含む回路基板の製造方法。 - 前記スルービアホールを形成する段階と前記絶縁膜を形成する段階との間に、
前記第2コア層または前記第3コア層を貫通して前記第1コア層を露出させるビアホールを形成する段階をさらに含む、請求項12に記載の回路基板の製造方法。
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KR10-2015-0025165 | 2015-02-23 | ||
KR1020150025165A KR102295104B1 (ko) | 2015-02-23 | 2015-02-23 | 회로기판 및 회로기판 제조방법 |
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JP2016157926A true JP2016157926A (ja) | 2016-09-01 |
JP6786764B2 JP6786764B2 (ja) | 2020-11-18 |
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WO2022004280A1 (ja) * | 2020-07-02 | 2022-01-06 | 株式会社村田製作所 | 多層回路基板および電子部品実装多層基板 |
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WO2022093083A1 (en) * | 2020-10-26 | 2022-05-05 | Telefonaktiebolaget Lm Ericsson (Publ) | Circuit board arrangement comprising a circuit board provided with a graphene island and method of communicating between a first and a second circuit |
US12096561B2 (en) * | 2021-11-01 | 2024-09-17 | Raytheon Company | Nanocomposite material for ultraviolet curable direct write semiconductor applications |
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JP2013077759A (ja) * | 2011-09-30 | 2013-04-25 | Ibiden Co Ltd | 多層プリント配線板及び多層プリント配線板の製造方法 |
JP2013222919A (ja) * | 2012-04-19 | 2013-10-28 | Panasonic Corp | 熱伝導シートおよびその製造方法およびこれを用いた熱伝導体 |
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JP4187352B2 (ja) | 1999-06-02 | 2008-11-26 | イビデン株式会社 | ビルドアップ多層プリント配線板及びビルドアップ多層プリント配線板の製造方法 |
KR100976201B1 (ko) | 2007-10-30 | 2010-08-17 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조 방법 |
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JPH1140902A (ja) * | 1997-07-18 | 1999-02-12 | Cmk Corp | プリント配線板及びその製造方法 |
JP2006114606A (ja) * | 2004-10-13 | 2006-04-27 | Mitsubishi Electric Corp | プリント配線板用基材、プリント配線板及びプリント配線板用基材の製造方法 |
JP2013077759A (ja) * | 2011-09-30 | 2013-04-25 | Ibiden Co Ltd | 多層プリント配線板及び多層プリント配線板の製造方法 |
JP2013222919A (ja) * | 2012-04-19 | 2013-10-28 | Panasonic Corp | 熱伝導シートおよびその製造方法およびこれを用いた熱伝導体 |
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WO2022004280A1 (ja) * | 2020-07-02 | 2022-01-06 | 株式会社村田製作所 | 多層回路基板および電子部品実装多層基板 |
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KR102295104B1 (ko) | 2021-09-01 |
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