JP2016136606A - エッチング方法 - Google Patents
エッチング方法 Download PDFInfo
- Publication number
- JP2016136606A JP2016136606A JP2015034212A JP2015034212A JP2016136606A JP 2016136606 A JP2016136606 A JP 2016136606A JP 2015034212 A JP2015034212 A JP 2015034212A JP 2015034212 A JP2015034212 A JP 2015034212A JP 2016136606 A JP2016136606 A JP 2016136606A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- region
- processing
- plasma
- deposit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 149
- 238000005530 etching Methods 0.000 title claims abstract description 41
- 239000007789 gas Substances 0.000 claims abstract description 186
- 238000012545 processing Methods 0.000 claims abstract description 142
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000001301 oxygen Substances 0.000 claims abstract description 26
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 26
- 239000011261 inert gas Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 77
- 230000000903 blocking effect Effects 0.000 abstract 1
- 101000911772 Homo sapiens Hsc70-interacting protein Proteins 0.000 description 16
- 101001139126 Homo sapiens Krueppel-like factor 6 Proteins 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000003507 refrigerant Substances 0.000 description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 7
- 229910001882 dioxygen Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 101000661807 Homo sapiens Suppressor of tumorigenicity 14 protein Proteins 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 229910052756 noble gas Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- PRPAGESBURMWTI-UHFFFAOYSA-N [C].[F] Chemical compound [C].[F] PRPAGESBURMWTI-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- E—FIXED CONSTRUCTIONS
- E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
- E05C—BOLTS OR FASTENING DEVICES FOR WINGS, SPECIALLY FOR DOORS OR WINDOWS
- E05C9/00—Arrangements of simultaneously actuated bolts or other securing devices at well-separated positions on the same wing
- E05C9/18—Details of fastening means or of fixed retaining means for the ends of bars
-
- E—FIXED CONSTRUCTIONS
- E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
- E05B—LOCKS; ACCESSORIES THEREFOR; HANDCUFFS
- E05B15/00—Other details of locks; Parts for engagement by bolts of fastening devices
- E05B15/02—Striking-plates; Keepers; Bolt staples; Escutcheons
-
- E—FIXED CONSTRUCTIONS
- E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
- E05C—BOLTS OR FASTENING DEVICES FOR WINGS, SPECIALLY FOR DOORS OR WINDOWS
- E05C19/00—Other devices specially designed for securing wings, e.g. with suction cups
-
- E—FIXED CONSTRUCTIONS
- E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
- E05Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES E05D AND E05F, RELATING TO CONSTRUCTION ELEMENTS, ELECTRIC CONTROL, POWER SUPPLY, POWER SIGNAL OR TRANSMISSION, USER INTERFACES, MOUNTING OR COUPLING, DETAILS, ACCESSORIES, AUXILIARY OPERATIONS NOT OTHERWISE PROVIDED FOR, APPLICATION THEREOF
- E05Y2800/00—Details, accessories and auxiliary operations not otherwise provided for
- E05Y2800/10—Additional functions
- E05Y2800/12—Sealing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Plasma Technology (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610018014.5A CN105810579B (zh) | 2015-01-16 | 2016-01-12 | 蚀刻方法 |
TW105101026A TWI684218B (zh) | 2015-01-16 | 2016-01-14 | 蝕刻方法(三) |
US14/995,392 US9633864B2 (en) | 2015-01-16 | 2016-01-14 | Etching method |
KR1020160004684A KR102513051B1 (ko) | 2015-01-16 | 2016-01-14 | 에칭 방법 |
EP16151256.1A EP3046137A1 (en) | 2015-01-16 | 2016-01-14 | Etching method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015006775 | 2015-01-16 | ||
JP2015006775 | 2015-01-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2016136606A true JP2016136606A (ja) | 2016-07-28 |
Family
ID=56513112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015034212A Pending JP2016136606A (ja) | 2015-01-16 | 2015-02-24 | エッチング方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2016136606A (zh) |
KR (1) | KR102513051B1 (zh) |
TW (1) | TWI684218B (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108878285A (zh) * | 2017-05-11 | 2018-11-23 | 东京毅力科创株式会社 | 蚀刻方法 |
KR20190052633A (ko) | 2017-11-08 | 2019-05-16 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
CN110391140A (zh) * | 2018-04-17 | 2019-10-29 | 东京毅力科创株式会社 | 蚀刻方法和等离子体处理装置 |
JP2020145404A (ja) * | 2019-02-28 | 2020-09-10 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
CN111681956A (zh) * | 2019-03-11 | 2020-09-18 | 东京毅力科创株式会社 | 等离子体处理方法和等离子体处理装置 |
KR20210035074A (ko) | 2018-08-21 | 2021-03-31 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 플라즈마 처리 장치 |
KR20210041072A (ko) | 2018-08-24 | 2021-04-14 | 도쿄엘렉트론가부시키가이샤 | 에칭하는 방법 및 플라즈마 처리 장치 |
CN113394082A (zh) * | 2016-08-29 | 2021-09-14 | 东京毅力科创株式会社 | 等离子体处理装置和被处理体的处理方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7138514B2 (ja) * | 2018-08-22 | 2022-09-16 | 東京エレクトロン株式会社 | 環状部材、プラズマ処理装置及びプラズマエッチング方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3027951B2 (ja) * | 1997-03-12 | 2000-04-04 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2002025979A (ja) * | 2000-07-03 | 2002-01-25 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US6716766B2 (en) * | 2002-08-22 | 2004-04-06 | Micron Technology, Inc. | Process variation resistant self aligned contact etch |
US7056830B2 (en) * | 2003-09-03 | 2006-06-06 | Applied Materials, Inc. | Method for plasma etching a dielectric layer |
JP2014209515A (ja) * | 2013-04-16 | 2014-11-06 | 東京エレクトロン株式会社 | エッチング方法 |
-
2015
- 2015-02-24 JP JP2015034212A patent/JP2016136606A/ja active Pending
-
2016
- 2016-01-14 KR KR1020160004684A patent/KR102513051B1/ko active IP Right Grant
- 2016-01-14 TW TW105101026A patent/TWI684218B/zh active
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113394082A (zh) * | 2016-08-29 | 2021-09-14 | 东京毅力科创株式会社 | 等离子体处理装置和被处理体的处理方法 |
CN108878285A (zh) * | 2017-05-11 | 2018-11-23 | 东京毅力科创株式会社 | 蚀刻方法 |
CN108878285B (zh) * | 2017-05-11 | 2023-06-16 | 东京毅力科创株式会社 | 蚀刻方法 |
KR20190052633A (ko) | 2017-11-08 | 2019-05-16 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
US10529583B2 (en) | 2017-11-08 | 2020-01-07 | Tokyo Electron Limited | Etching method |
CN110391140A (zh) * | 2018-04-17 | 2019-10-29 | 东京毅力科创株式会社 | 蚀刻方法和等离子体处理装置 |
KR20210035074A (ko) | 2018-08-21 | 2021-03-31 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 플라즈마 처리 장치 |
KR20210041072A (ko) | 2018-08-24 | 2021-04-14 | 도쿄엘렉트론가부시키가이샤 | 에칭하는 방법 및 플라즈마 처리 장치 |
US11710643B2 (en) | 2018-08-24 | 2023-07-25 | Tokyo Electron Limited | Method of etching and plasma processing apparatus |
JP2020145404A (ja) * | 2019-02-28 | 2020-09-10 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
JP7390165B2 (ja) | 2019-02-28 | 2023-12-01 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
CN111681956A (zh) * | 2019-03-11 | 2020-09-18 | 东京毅力科创株式会社 | 等离子体处理方法和等离子体处理装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20160088816A (ko) | 2016-07-26 |
TW201635371A (zh) | 2016-10-01 |
TWI684218B (zh) | 2020-02-01 |
KR102513051B1 (ko) | 2023-03-22 |
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