JP2016099629A5 - - Google Patents
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- Publication number
- JP2016099629A5 JP2016099629A5 JP2015225378A JP2015225378A JP2016099629A5 JP 2016099629 A5 JP2016099629 A5 JP 2016099629A5 JP 2015225378 A JP2015225378 A JP 2015225378A JP 2015225378 A JP2015225378 A JP 2015225378A JP 2016099629 A5 JP2016099629 A5 JP 2016099629A5
- Authority
- JP
- Japan
- Prior art keywords
- doping region
- gate electrode
- ion doping
- gate
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 4
- 239000011229 interlayer Substances 0.000 claims 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 229920005591 polysilicon Polymers 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 230000001678 irradiating effect Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140166650A KR20160063515A (ko) | 2014-11-26 | 2014-11-26 | 트랜지스터, 이를 구비한 유기발광 표시장치, 및 유기발광 표시장치 제조방법 |
| KR10-2014-0166650 | 2014-11-26 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016099629A JP2016099629A (ja) | 2016-05-30 |
| JP2016099629A5 true JP2016099629A5 (enExample) | 2019-03-07 |
| JP6738140B2 JP6738140B2 (ja) | 2020-08-12 |
Family
ID=56011005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015225378A Active JP6738140B2 (ja) | 2014-11-26 | 2015-11-18 | トランジスタ、これを具備する有機発光表示装置、及び有機発光表示装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10573698B2 (enExample) |
| JP (1) | JP6738140B2 (enExample) |
| KR (1) | KR20160063515A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102519120B1 (ko) * | 2016-10-18 | 2023-04-06 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
| KR102525989B1 (ko) * | 2017-11-27 | 2023-04-27 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
| CN108735763A (zh) * | 2018-05-29 | 2018-11-02 | 深圳市华星光电技术有限公司 | 一种tft阵列基板、显示面板 |
| KR102771401B1 (ko) * | 2019-04-16 | 2025-02-26 | 삼성디스플레이 주식회사 | 표시 패널 및 표시 패널의 제조 방법 |
| KR102900876B1 (ko) * | 2019-07-16 | 2025-12-16 | 삼성디스플레이 주식회사 | 표시 장치 |
| US12457851B2 (en) * | 2021-10-12 | 2025-10-28 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel having anode portion with improved symmetry and mobile terminal |
| KR102864045B1 (ko) * | 2021-11-19 | 2025-09-23 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 박막 트랜지스터 기판 및 표시장치 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5612234A (en) * | 1995-10-04 | 1997-03-18 | Lg Electronics Inc. | Method for manufacturing a thin film transistor |
| JP3503427B2 (ja) * | 1997-06-19 | 2004-03-08 | ソニー株式会社 | 薄膜トランジスタの製造方法 |
| JPH11168217A (ja) | 1997-12-05 | 1999-06-22 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタとその製造方法及び液晶表示装置 |
| KR100426031B1 (ko) | 2001-12-29 | 2004-04-03 | 엘지.필립스 엘시디 주식회사 | 능동행렬 유기전기발광소자 및 그의 제조 방법 |
| JP2007065015A (ja) | 2005-08-29 | 2007-03-15 | Seiko Epson Corp | 発光制御装置、発光装置およびその制御方法 |
| JP2007316510A (ja) | 2006-05-29 | 2007-12-06 | Toshiba Matsushita Display Technology Co Ltd | アクティブマトリクス型表示装置 |
| JP2008033072A (ja) | 2006-07-31 | 2008-02-14 | Sony Corp | 表示装置およびその製造方法 |
| JP2008192688A (ja) | 2007-02-01 | 2008-08-21 | Sharp Corp | 半導体装置 |
| US7919352B2 (en) | 2007-04-10 | 2011-04-05 | Global Oled Technology Llc | Electrical connection in OLED devices |
| US20090078940A1 (en) | 2007-09-26 | 2009-03-26 | Sharp Laboratories Of America, Inc. | Location-controlled crystal seeding |
| KR100953657B1 (ko) * | 2007-11-13 | 2010-04-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터 및 그 제조방법과 이를 구비하는유기전계발광표시장치 |
| JP2009271188A (ja) | 2008-05-01 | 2009-11-19 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置とその製造方法 |
| KR100982311B1 (ko) * | 2008-05-26 | 2010-09-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 |
| KR101049808B1 (ko) * | 2008-12-30 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 |
| US8198666B2 (en) | 2009-02-20 | 2012-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a nonvolatile memory element having first, second and third insulating films |
| WO2011155250A1 (ja) * | 2010-06-07 | 2011-12-15 | シャープ株式会社 | 結晶性半導体膜の製造方法、半導体装置、および表示装置 |
| JP2012174862A (ja) | 2011-02-21 | 2012-09-10 | Canon Inc | 半導体装置およびそれを用いた発光装置 |
| TWI415268B (zh) * | 2011-09-22 | 2013-11-11 | 友達光電股份有限公司 | 薄膜電晶體元件及顯示面板之畫素結構與驅動電路 |
| US9111803B2 (en) * | 2011-10-03 | 2015-08-18 | Joled Inc. | Thin-film device, thin-film device array, and method of manufacturing thin-film device |
| US8878186B2 (en) | 2011-11-30 | 2014-11-04 | Panasonic Corporation | Semiconductor device and display apparatus |
| KR101924605B1 (ko) | 2011-12-16 | 2018-12-04 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
| KR101949675B1 (ko) | 2012-11-14 | 2019-04-22 | 엘지디스플레이 주식회사 | 유기발광 표시장치 및 이의 제조방법 |
| US9673267B2 (en) * | 2013-03-26 | 2017-06-06 | Lg Display Co., Ltd. | Organic light emitting diode display device having a capacitor with stacked storage electrodes and method for manufacturing the same |
| US9818765B2 (en) * | 2013-08-26 | 2017-11-14 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
| US9564478B2 (en) * | 2013-08-26 | 2017-02-07 | Apple Inc. | Liquid crystal displays with oxide-based thin-film transistors |
| JP6471379B2 (ja) * | 2014-11-25 | 2019-02-20 | 株式会社ブイ・テクノロジー | 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置 |
-
2014
- 2014-11-26 KR KR1020140166650A patent/KR20160063515A/ko not_active Withdrawn
-
2015
- 2015-10-21 US US14/919,666 patent/US10573698B2/en active Active
- 2015-11-18 JP JP2015225378A patent/JP6738140B2/ja active Active
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