JP2016099629A - トランジスタ、これを具備する有機発光表示装置、及び有機発光表示装置の製造方法 - Google Patents
トランジスタ、これを具備する有機発光表示装置、及び有機発光表示装置の製造方法 Download PDFInfo
- Publication number
- JP2016099629A JP2016099629A JP2015225378A JP2015225378A JP2016099629A JP 2016099629 A JP2016099629 A JP 2016099629A JP 2015225378 A JP2015225378 A JP 2015225378A JP 2015225378 A JP2015225378 A JP 2015225378A JP 2016099629 A JP2016099629 A JP 2016099629A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- organic light
- light emitting
- gate
- ion doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 41
- 229920005591 polysilicon Polymers 0.000 claims abstract description 40
- 239000010410 layer Substances 0.000 claims description 180
- 239000011229 interlayer Substances 0.000 claims description 34
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 20
- 239000003990 capacitor Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 230000004044 response Effects 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 31
- 102100033868 Cannabinoid receptor 1 Human genes 0.000 description 16
- 101000710899 Homo sapiens Cannabinoid receptor 1 Proteins 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 11
- 238000002161 passivation Methods 0.000 description 10
- 101001116937 Homo sapiens Protocadherin alpha-4 Proteins 0.000 description 9
- 230000005525 hole transport Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 102100036214 Cannabinoid receptor 2 Human genes 0.000 description 5
- 101000875075 Homo sapiens Cannabinoid receptor 2 Proteins 0.000 description 5
- 101001116931 Homo sapiens Protocadherin alpha-6 Proteins 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geometry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
バッファ層BFL上に非晶質シリコン層ASLをカバーするように第1ゲート絶縁層GI1を形成する。第1ゲート絶縁層GI1に含まれる材料は図3及び図4で説明したことと同様である。
図6Bに示したようにレーザー照射が終わると、非晶質シリコン層ASLの温度が低くなる。
100 ゲート駆動部
200 データ駆動部
PX 画素
TR1 第1トランジスタ
TR2 第2トランジスタ
DE2 第2ドレーン電極
SE2 第2ソース電極
GE2−1 第1ゲート電極
GE2−2 第2ゲート電極
PSL ポリシリコン層
OLED 有機発光素子
AE アノード
HCR 正孔輸送領域
EML 有機発光層
ECR 電子輸送領域
CE カソード
Claims (10)
- ゲートラインにゲート信号を提供し、発光ラインに発光制御信号を提供する走査駆動部と、
データラインにデータ信号を提供するデータ駆動部と、
複数の画素を含む有機発光表示パネルと、を含み、
前記画素の各々は、有機発光素子及び前記有機発光素子を制御する回路部を含み、
前記回路部は、前記ゲートライン対応されるゲートラインに印加されたゲート信号に応答して前記データライン対応されるデータラインに印加されたデータ信号を出力する第1トランジスタ及び前記有機発光素子に流れる駆動電流を制御する第2トランジスタを含み、
前記第2トランジスタは、
ベース基板上に配置され、チャンネル領域、前記チャンネル領域を介して配置された第1イオンドーピング領域、及び第2イオンドーピング領域を含むポリシリコン層と、
前記チャンネル領域上に絶縁されるように重畳する第1ゲート電極と、
前記第1ゲート電極に絶縁され、前記チャンネル領域に重畳する第2ゲート電極と、
前記第2ゲート電極上に配置される層間絶縁層と、
前記層間絶縁層上に配置され前記第1イオンドーピング領域に連結されたソース電極と、
前記層間絶縁層上に配置され前記第2イオンドーピング領域に連結されたドレーン電極と、を含み、
前記チャンネル領域は、前記第1イオンドーピング領域及び前記第2イオンドーピング領域より大きさが大きいグレイン(Grain)を有する有機発光表示装置。 - 前記グレイン(Grain)は、前記ポリシリコン層の中心部分で直径の長さが30μm乃至40μmであり、前記ポリシリコン層の縁部分で直径の長さが10μm乃至20μmである請求項1に記載の有機発光表示装置。
- 前記層間絶縁層上から見た時、前記第2ゲート電極は、前記第1ゲート電極を完全にカバーする請求項1に記載の有機発光表示装置。
- 前記第1ゲート電極及び前記第2ゲート電極は、前記第1トランジスタから受信した前記データ信号に対応する電圧を充電するキャパシターの電極を構成する請求項3に記載の有機発光表示装置。
- 前記ベース基板及び前記ポリシリコン層の間にバッファ層をさらに含む請求項4に記載の有機発光表示装置。
- ベース基板の一面上に非晶質シリコン層、前記非晶質シリコン層に絶縁されるように重畳する第1ゲート電極、及び前記第1ゲート電極に絶縁されるように重畳する第2ゲート電極を形成する段階と、
前記ベース基板下部上で前記非晶質シリコンにレーザーを照射して前記非晶質シリコン層からポリシリコン層を形成する段階と、
前記第2ゲート電極上に層間絶縁層を形成する段階と、
前記第2ゲート電極をマスクとして利用して前記ポリシリコン層の一部分をイオンドーピングして第1イオンドーピング領域及び第2イオンドーピング領域を形成する段階と、
前記第1イオンドーピング領域に連結されたソース電極及び前記第2イオンドーピング領域に連結されたドレーン電極を形成する段階と、
前記ドレーン電極に連結された有機発光素子を形成する段階と、を含む有機発光表示装置製造方法。 - 前記層間絶縁層上から見た時、前記第2ゲート電極は、前記第1ゲート電極を完全にカバーする請求項6に記載の有機発光表示装置製造方法。
- 前記レーザーは、エキシマレーザー(Excimer Laser)である請求項7に記載の有機発光表示装置製造方法。
- 前記ポリシリコン層及び前記第1ゲート電極の間に配置される第1ゲート絶縁層の厚さは、前記第1ゲート電極及び前記第2ゲート電極の間に配置される第2ゲート絶縁層の厚さより小さいように形成される請求項8に記載の有機発光表示装置製造方法。
- 前記ベース基板及び前記ポリシリコン層の間にバッファ層をさらに形成する請求項9に記載の有機発光表示装置製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2014-0166650 | 2014-11-26 | ||
KR1020140166650A KR20160063515A (ko) | 2014-11-26 | 2014-11-26 | 트랜지스터, 이를 구비한 유기발광 표시장치, 및 유기발광 표시장치 제조방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016099629A true JP2016099629A (ja) | 2016-05-30 |
JP2016099629A5 JP2016099629A5 (ja) | 2019-03-07 |
JP6738140B2 JP6738140B2 (ja) | 2020-08-12 |
Family
ID=56011005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015225378A Active JP6738140B2 (ja) | 2014-11-26 | 2015-11-18 | トランジスタ、これを具備する有機発光表示装置、及び有機発光表示装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10573698B2 (ja) |
JP (1) | JP6738140B2 (ja) |
KR (1) | KR20160063515A (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102519120B1 (ko) * | 2016-10-18 | 2023-04-06 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
KR102525989B1 (ko) * | 2017-11-27 | 2023-04-27 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
CN108735763A (zh) * | 2018-05-29 | 2018-11-02 | 深圳市华星光电技术有限公司 | 一种tft阵列基板、显示面板 |
KR20210009486A (ko) * | 2019-07-16 | 2021-01-27 | 삼성디스플레이 주식회사 | 표시 장치 |
US20230115668A1 (en) * | 2021-10-12 | 2023-04-13 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel and mobile terminal |
KR20230073464A (ko) * | 2021-11-19 | 2023-05-26 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 박막 트랜지스터 기판 및 표시장치 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11168217A (ja) * | 1997-12-05 | 1999-06-22 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタとその製造方法及び液晶表示装置 |
JP2007065015A (ja) * | 2005-08-29 | 2007-03-15 | Seiko Epson Corp | 発光制御装置、発光装置およびその制御方法 |
JP2007316510A (ja) * | 2006-05-29 | 2007-12-06 | Toshiba Matsushita Display Technology Co Ltd | アクティブマトリクス型表示装置 |
JP2008192688A (ja) * | 2007-02-01 | 2008-08-21 | Sharp Corp | 半導体装置 |
JP2009081433A (ja) * | 2007-09-26 | 2009-04-16 | Sharp Corp | 結晶化方法および活性半導体膜構造体 |
JP2010219511A (ja) * | 2009-02-20 | 2010-09-30 | Semiconductor Energy Lab Co Ltd | 不揮発性半導体記憶装置およびその作製方法 |
JP2012174862A (ja) * | 2011-02-21 | 2012-09-10 | Canon Inc | 半導体装置およびそれを用いた発光装置 |
US20130075766A1 (en) * | 2011-09-22 | 2013-03-28 | Che-Chia Chang | Thin film transistor device and pixel structure and driving circuit of a display panel |
WO2013080260A1 (ja) * | 2011-11-30 | 2013-06-06 | パナソニック株式会社 | 半導体装置及び表示装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5612234A (en) * | 1995-10-04 | 1997-03-18 | Lg Electronics Inc. | Method for manufacturing a thin film transistor |
JP3503427B2 (ja) * | 1997-06-19 | 2004-03-08 | ソニー株式会社 | 薄膜トランジスタの製造方法 |
KR100426031B1 (ko) | 2001-12-29 | 2004-04-03 | 엘지.필립스 엘시디 주식회사 | 능동행렬 유기전기발광소자 및 그의 제조 방법 |
JP2008033072A (ja) | 2006-07-31 | 2008-02-14 | Sony Corp | 表示装置およびその製造方法 |
US7919352B2 (en) | 2007-04-10 | 2011-04-05 | Global Oled Technology Llc | Electrical connection in OLED devices |
KR100953657B1 (ko) * | 2007-11-13 | 2010-04-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터 및 그 제조방법과 이를 구비하는유기전계발광표시장치 |
JP2009271188A (ja) | 2008-05-01 | 2009-11-19 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置とその製造方法 |
KR100982311B1 (ko) * | 2008-05-26 | 2010-09-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 |
KR101049808B1 (ko) * | 2008-12-30 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 |
WO2011155250A1 (ja) * | 2010-06-07 | 2011-12-15 | シャープ株式会社 | 結晶性半導体膜の製造方法、半導体装置、および表示装置 |
US9111803B2 (en) * | 2011-10-03 | 2015-08-18 | Joled Inc. | Thin-film device, thin-film device array, and method of manufacturing thin-film device |
KR101924605B1 (ko) | 2011-12-16 | 2018-12-04 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
KR101949675B1 (ko) | 2012-11-14 | 2019-04-22 | 엘지디스플레이 주식회사 | 유기발광 표시장치 및 이의 제조방법 |
US9673267B2 (en) * | 2013-03-26 | 2017-06-06 | Lg Display Co., Ltd. | Organic light emitting diode display device having a capacitor with stacked storage electrodes and method for manufacturing the same |
US9818765B2 (en) * | 2013-08-26 | 2017-11-14 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
US9412799B2 (en) * | 2013-08-26 | 2016-08-09 | Apple Inc. | Display driver circuitry for liquid crystal displays with semiconducting-oxide thin-film transistors |
JP6471379B2 (ja) * | 2014-11-25 | 2019-02-20 | 株式会社ブイ・テクノロジー | 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置 |
-
2014
- 2014-11-26 KR KR1020140166650A patent/KR20160063515A/ko not_active Application Discontinuation
-
2015
- 2015-10-21 US US14/919,666 patent/US10573698B2/en active Active
- 2015-11-18 JP JP2015225378A patent/JP6738140B2/ja active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11168217A (ja) * | 1997-12-05 | 1999-06-22 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタとその製造方法及び液晶表示装置 |
JP2007065015A (ja) * | 2005-08-29 | 2007-03-15 | Seiko Epson Corp | 発光制御装置、発光装置およびその制御方法 |
JP2007316510A (ja) * | 2006-05-29 | 2007-12-06 | Toshiba Matsushita Display Technology Co Ltd | アクティブマトリクス型表示装置 |
JP2008192688A (ja) * | 2007-02-01 | 2008-08-21 | Sharp Corp | 半導体装置 |
JP2009081433A (ja) * | 2007-09-26 | 2009-04-16 | Sharp Corp | 結晶化方法および活性半導体膜構造体 |
JP2010219511A (ja) * | 2009-02-20 | 2010-09-30 | Semiconductor Energy Lab Co Ltd | 不揮発性半導体記憶装置およびその作製方法 |
JP2012174862A (ja) * | 2011-02-21 | 2012-09-10 | Canon Inc | 半導体装置およびそれを用いた発光装置 |
US20130075766A1 (en) * | 2011-09-22 | 2013-03-28 | Che-Chia Chang | Thin film transistor device and pixel structure and driving circuit of a display panel |
WO2013080260A1 (ja) * | 2011-11-30 | 2013-06-06 | パナソニック株式会社 | 半導体装置及び表示装置 |
Also Published As
Publication number | Publication date |
---|---|
JP6738140B2 (ja) | 2020-08-12 |
US10573698B2 (en) | 2020-02-25 |
US20160148986A1 (en) | 2016-05-26 |
KR20160063515A (ko) | 2016-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11569325B2 (en) | Display device, method of manufacturing the same, and electronic apparatus | |
US10263060B2 (en) | Hybrid thin film transistor and organic light emitting display device using the same | |
JP6738140B2 (ja) | トランジスタ、これを具備する有機発光表示装置、及び有機発光表示装置の製造方法 | |
US9000424B2 (en) | Organic light emitting diode display and method for manufacturing an organic light emitting diode display | |
JP5030682B2 (ja) | 有機発光表示装置 | |
JP2009152584A (ja) | 薄膜トランジスタの製造方法及びその製造方法により得られた薄膜トランジスタを有する有機発光素子表示装置 | |
JP2003223120A (ja) | 半導体表示装置 | |
KR101795997B1 (ko) | 유기발광다이오드 표시장치 및 그 제조 방법 | |
JP2009199080A (ja) | 有機電界発光表示装置及びその製造方法 | |
KR100635574B1 (ko) | 유기전계발광표시장치 | |
US20200294447A1 (en) | Pixel circuit, display device, and electronic apparatus | |
KR20050122694A (ko) | 발광 표시장치와 그의 제조방법 | |
JP5917729B2 (ja) | El表示装置 | |
JP6148318B2 (ja) | El表示装置 | |
JP2013127622A (ja) | 表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181116 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190123 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20191108 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191119 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200217 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200623 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200717 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6738140 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |