CN108735763A - 一种tft阵列基板、显示面板 - Google Patents
一种tft阵列基板、显示面板 Download PDFInfo
- Publication number
- CN108735763A CN108735763A CN201810528473.7A CN201810528473A CN108735763A CN 108735763 A CN108735763 A CN 108735763A CN 201810528473 A CN201810528473 A CN 201810528473A CN 108735763 A CN108735763 A CN 108735763A
- Authority
- CN
- China
- Prior art keywords
- metal layer
- tft array
- layer
- array substrate
- gate insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 58
- 239000010410 layer Substances 0.000 claims abstract description 130
- 229910052751 metal Inorganic materials 0.000 claims abstract description 95
- 239000002184 metal Substances 0.000 claims abstract description 95
- 239000011241 protective layer Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000012528 membrane Substances 0.000 abstract description 7
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 230000009194 climbing Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本发明提供了一种TFT阵列基板，包括：基板；第一金属层，第一金属层设于基板之上；栅极绝缘层，栅极绝缘层设于第一金属层之上并延伸至基板表面，栅极绝缘层包括设于第一金属层上的平坦部和与平坦部相对两侧相连接的一对阶梯部；第二金属层，第二金属层设于平坦部之上，第二金属层在基板表面的正投影的面积小于平坦部表面的面积；保护层，保护层设于第二金属层和栅极绝缘层之上。由于第二金属层正投影的面积小于平坦部表面的面积，即第二金属层的一侧或相对的两侧向内缩进了一段距离，使第二金属层“后退”了一段距离。因此，保护层不需要连续爬坡。最终使得保护层不易出现破膜、氧化等问题，大大提高了TFT阵列基板的稳定性。
Description
技术领域
本发明属于显示技术领域，具体涉及一种TFT阵列基板、显示面板。
背景技术
在TFT阵列基板的制备过程中，通常会将第一金属层与第二金属层的相对两侧进行切齐处理，使得第二金属层与栅极绝缘层中的平坦层的宽度大致相等。但在制备保护层时，厚度仅为2000A的保护层需要爬坡第一金属层，栅极绝缘层和第二金属层近10000A的高度。而此时由于已经进行了切齐处理，导致保护层需要连续爬坡，使保护层无法得到缓冲。因此，保护层在栅极绝缘层和第二金属层的连接处极易发生破膜，进而出现氧化等问题。但目前，尚没有一些良好的解决办法来避免此问题。
发明内容
鉴于此，为了解决上述问题，本发明提供了一种TFT阵列基板、显示面板，将第二金属层后退一段距离，进而增大第二金属层与栅极绝缘层之间的距离来使保护层得到缓冲，避免破膜，氧化现象的发生。
本发明第一方面提供了一种TFT阵列基板，包括：
基板；
第一金属层，所述第一金属层设于所述基板之上；
栅极绝缘层，所述栅极绝缘层设于所述第一金属层之上并延伸至所述基板表面，所述栅极绝缘层包括设于所述第一金属层上的平坦部和与所述平坦部相对两侧相连接的一对阶梯部；
第二金属层，所述第二金属层设于所述平坦部之上，所述第二金属层在所述基板表面的正投影的面积小于所述平坦部表面的面积；
保护层，所述保护层设于所述第二金属层和所述栅极绝缘层之上。
本发明第一方面提供的一种TFT阵列基板，所述第二金属层在所述基板表面的正投影的面积，即第二金属层与平坦部表面相邻接的第二金属层的下表面在所述平坦部表面的正投影的面积。由于所述第二金属层在所述基板表面的正投影的面积小于所述平坦部表面的面积，意味着第二金属层的一侧或相对的两侧向平坦部表面的中心缩进了一段距离，使得第二金属层“后退”了一段距离，让第二金属层和栅极绝缘层的平坦部形成了一台阶结构。因此，在保护层的制备过程中，保护层不需要连续爬坡，而是使爬坡分成了两段，保护层可以在台阶结构处得到缓冲。最终导致保护层不易出现破膜、氧化等问题，大大提高了TFT阵列基板的稳定性。
其中，所述第二金属层的相对两侧均向所述平坦部的中心缩进预设宽度。
其中，所述预设宽度为0.5-1μm。
其中，所述第一金属层的相对两侧为第一斜面，所述阶梯部包括与所述平坦部相连的第二斜面，所述第二金属层的相对两侧为第三斜面，所述第一斜面、所述第二斜面和所述第三斜面与所述基板表面的夹角为40-60°。
其中，所述栅极绝缘层设有第一沟槽以使所述第二金属层部分设于所述第一金属层之上。
其中，所述第二金属层设有第二沟槽，所述第二沟槽的正投影位于所述第一沟槽的正投影之内。
其中，通过涂布工艺、光罩工艺或刻蚀工艺使所述第二金属层在所述基板表面的正投影的面积小于所述平坦部表面的面积。
其中，所述第一金属层与所述第二金属层的材质分别选自铜、钨、铬和铝中的一种或多种。
其中，所述栅极绝缘层的材质包括氧化硅、氮化硅、氮氧化硅或氧化铝，所述保护层的材质包括氧化硅或氮化硅。
本发明第二方面提供了一种显示面板，包括本发明第一方面所述的TFT阵列基板。
本发明第二方面提供的一种显示面板，由于TFT阵列基板的保护层不易出现破膜、氧化等问题，使得显示面板的稳定性得到了大大的提升。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对本发明实施例中所需要使用的附图进行说明。
图1为本发明一实施例中TFT阵列基板的结构示意图；
图2为本发明另一实施例中TFT阵列基板的结构示意图。
具体实施方式
以下是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。
本发明实施例提供的一种TFT阵列基板100，包括：
基板1；
第一金属层2，所述第一金属层2设于所述基板1之上；
栅极绝缘层3，所述栅极绝缘层3设于所述第一金属层2之上并延伸至所述基板1表面，所述栅极绝缘层3包括设于所述第一金属层2上的平坦部31和与所述平坦部31相对两侧相连接的一对阶梯部32；
第二金属层4，所述第二金属层4设于所述平坦部31之上，所述第二金属层4在所述基板1表面的正投影的面积小于所述平坦部31表面的面积；
保护层5，所述保护层5设于所述第二金属层4和所述栅极绝缘层3之上。
本发明实施例提供的一种TFT阵列基板100，所述第二金属层4在所述基板1表面的正投影的面积，即第二金属层4与平坦部31表面相邻接的第二金属层4的下表面在所述平坦部31表面的正投影的面积。由于所述第二金属层4在所述基板1表面的正投影的面积小于所述平坦部31表面的面积，意味着第二金属层4的一侧或相对的两侧向平坦部31表面的中心缩进了一段距离，使得第二金属层4“后退”了一段距离，让第二金属层4和栅极绝缘层3的平坦部31形成了一台阶结构。因此，在保护层5的制备过程中，保护层5不需要连续爬坡，而是使爬坡分成了两段，保护层5可以在台阶结构处得到缓冲。最终导致保护层5不易出现破膜、氧化等问题，大大提高了TFT阵列基板100的稳定性。
本发明实施方式中，所述第二金属层4的相对两侧均向所述平坦部31的中心缩进预设宽度。第二金属层4的相对两侧均缩进预设宽度，使得第二金属层4的两侧均与平坦部31形成台阶结构，最终导致TFT阵列基板100的稳定性得到进一步的提升。
本发明实施方式中，所述预设宽度为0.5-1μm。预设宽度若小于0.5μm，则无法起到使保护层5缓冲的作用，仍然会出现破膜和氧化的问题。但预设宽度若大于1μm，则会导致第二金属层4断线，破坏了TFT阵列基板100的性能。优选地，预设宽度为0.6-0.9μm，更优选地，预设宽度为0.7-0.8μm。
本发明实施方式中，所述第一金属层2的相对两侧为第一斜面，所述阶梯部32包括与所述平坦部31相连的第二斜面，所述第二金属层4的相对两侧为第三斜面；所述第一斜面、所述第二斜面和所述第三斜面与所述基板1表面的夹角为40-60°。由于第一金属层2的相对两侧即第一斜面为倾斜结构，因此，基于第一金属层2制备出的栅极绝缘层3的阶梯部32也为倾斜结构。而因为第一金属层2和第二金属层4进行了切齐处理，因此第二金属层4的相对两侧也为斜面结构。第一斜面、第二斜面和第三斜面与基板1表面的夹角为40-60°，角度的降低可使保护层5在制备过程中爬坡的“坡度”降低，也有利于防止保护层5发生破裂、进而出现的“氧化”等问题。优选地，第一斜面、第二斜面和第三斜面与基板1表面的夹角为45-55°
本发明实施方式中，所述栅极绝缘层3设有第一沟槽33以使所述第二金属层4部分设于所述第一金属层2之上。栅极绝缘层3开设的沟槽会使第一金属层2与第二金属层4搭接在一起，方便后续的布线操作。优选地，第一沟槽33位于所述栅极绝缘层3的中间。
本发明实施方式中，所述第二金属层4设有第二沟槽41，所述第二沟槽41的正投影位于所述第一沟槽33的正投影之内。优选地，所述第二沟槽41位于所述第一沟槽33的正上方。本发明实施方式中，通过涂布工艺、光罩工艺或刻蚀工艺使所述第二金属层4在所述基板1表面的正投影的面积小于所述平坦部31表面的面积。
本发明实施方式中，第一金属层2与第二金属层4的材质分别选自铜、钨、铬和铝中的一种或多种。
本发明实施方式中，所述第一金属层2与所述第二金属层4为相同材质或不同材质。
本发明实施方式中，所述栅极绝缘层3的材质包括氧化硅、氮化硅、氮氧化硅或氧化铝。
本发明实施方式中，所述保护层5的材质包括氧化硅或氮化硅
本发明实施方式中，有源层的材质为铟镓锌氧化物(IGZO)。
本发明实施例提供的一种显示面板，包括本发明实施例所述的TFT阵列基板100。
本发明实施例提供的一种显示面板，由于TFT阵列基板100的保护层5不易出现破膜、氧化等问题，使得显示面板的稳定性得到了大大的提升。
以上对本发明实施方式所提供的内容进行了详细介绍，本文对本发明的原理及实施方式进行了阐述与说明，以上说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。
Claims (10)
1.一种TFT阵列基板，其特征在于，包括：
基板；
第一金属层，所述第一金属层设于所述基板之上；
栅极绝缘层，所述栅极绝缘层设于所述第一金属层之上并延伸至所述基板表面，所述栅极绝缘层包括设于所述第一金属层上的平坦部和与所述平坦部相对两侧相连接的一对阶梯部；
第二金属层，所述第二金属层设于所述平坦部之上，所述第二金属层在所述基板表面的正投影的面积小于所述平坦部表面的面积；
保护层，所述保护层设于所述第二金属层和所述栅极绝缘层之上。
2.如权利要求1所述的TFT阵列基板，其特征在于，所述第二金属层的相对两侧均向所述平坦部的中心缩进预设宽度。
3.如权利要求2所述的TFT阵列基板，其特征在于，所述预设宽度为0.5-1μm。
4.如权利要求1所述的TFT阵列基板，其特征在于，所述第一金属层的相对两侧为第一斜面，所述阶梯部包括与所述平坦部相连的第二斜面，所述第二金属层的相对两侧为第三斜面，所述第一斜面、所述第二斜面和所述第三斜面与所述基板表面的夹角为40-60°。
5.如权利要求1所述的TFT阵列基板，其特征在于，所述栅极绝缘层设有第一沟槽以使所述第二金属层部分设于所述第一金属层之上。
6.如权利要求5所述的TFT阵列基板，其特征在于，所述第二金属层设有第二沟槽，所述第二沟槽的正投影位于所述第一沟槽的正投影之内。
7.如权利要求1所述的TFT阵列基板，其特征在于，通过涂布工艺、光罩工艺或刻蚀工艺使所述第二金属层在所述基板表面的正投影的面积小于所述平坦部表面的面积。
8.如权利要求1所述的TFT阵列基板，其特征在于，所述第一金属层与所述第二金属层的材质分别选自铜、钨、铬和铝中的一种或多种。
9.如权利要求1所述的TFT阵列基板，其特征在于，所述栅极绝缘层的材质包括氧化硅、氮化硅、氮氧化硅或氧化铝，所述保护层的材质包括氧化硅或氮化硅。
10.一种显示面板，其特征在于，包括如权利要求1-9任一项所述的TFT阵列基板。
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810528473.7A CN108735763A (zh) | 2018-05-29 | 2018-05-29 | 一种tft阵列基板、显示面板 |
| US16/096,812 US11127761B2 (en) | 2018-05-29 | 2018-08-31 | TFT array substrate and display panel where the second metallic layer is withdrawn for a distance to prevent problems such as broken film and oxidization |
| PCT/CN2018/103476 WO2019227741A1 (zh) | 2018-05-29 | 2018-08-31 | 一种tft阵列基板、显示面板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810528473.7A CN108735763A (zh) | 2018-05-29 | 2018-05-29 | 一种tft阵列基板、显示面板 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108735763A true CN108735763A (zh) | 2018-11-02 |
Family
ID=63936501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810528473.7A Pending CN108735763A (zh) | 2018-05-29 | 2018-05-29 | 一种tft阵列基板、显示面板 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US11127761B2 (zh) |
| CN (1) | CN108735763A (zh) |
| WO (1) | WO2019227741A1 (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150034956A1 (en) * | 2012-05-31 | 2015-02-05 | Lg Display Co., Ltd. | Array substrate for liquid crystal display and manufacturing method thereof |
| CN104576657A (zh) * | 2014-12-23 | 2015-04-29 | 上海天马微电子有限公司 | 一种阵列基板及其制造方法 |
| US20160027802A1 (en) * | 2014-07-25 | 2016-01-28 | Samsung Display Co., Ltd. | Thin film transistor array panel and manufacturing method thereof |
| CN105470269A (zh) * | 2016-01-26 | 2016-04-06 | 深圳市华星光电技术有限公司 | Tft阵列基板及其制作方法 |
| CN206020894U (zh) * | 2016-09-21 | 2017-03-15 | 合肥鑫晟光电科技有限公司 | 阵列基板及显示装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3503427B2 (ja) * | 1997-06-19 | 2004-03-08 | ソニー株式会社 | 薄膜トランジスタの製造方法 |
| TWI415268B (zh) * | 2011-09-22 | 2013-11-11 | Au Optronics Corp | 薄膜電晶體元件及顯示面板之畫素結構與驅動電路 |
| CN102629592A (zh) * | 2012-03-23 | 2012-08-08 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
| KR20160063515A (ko) * | 2014-11-26 | 2016-06-07 | 삼성디스플레이 주식회사 | 트랜지스터, 이를 구비한 유기발광 표시장치, 및 유기발광 표시장치 제조방법 |
-
2018
- 2018-05-29 CN CN201810528473.7A patent/CN108735763A/zh active Pending
- 2018-08-31 WO PCT/CN2018/103476 patent/WO2019227741A1/zh active Application Filing
- 2018-08-31 US US16/096,812 patent/US11127761B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150034956A1 (en) * | 2012-05-31 | 2015-02-05 | Lg Display Co., Ltd. | Array substrate for liquid crystal display and manufacturing method thereof |
| US20160027802A1 (en) * | 2014-07-25 | 2016-01-28 | Samsung Display Co., Ltd. | Thin film transistor array panel and manufacturing method thereof |
| CN104576657A (zh) * | 2014-12-23 | 2015-04-29 | 上海天马微电子有限公司 | 一种阵列基板及其制造方法 |
| CN105470269A (zh) * | 2016-01-26 | 2016-04-06 | 深圳市华星光电技术有限公司 | Tft阵列基板及其制作方法 |
| CN206020894U (zh) * | 2016-09-21 | 2017-03-15 | 合肥鑫晟光电科技有限公司 | 阵列基板及显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019227741A1 (zh) | 2019-12-05 |
| US20200365622A1 (en) | 2020-11-19 |
| US11127761B2 (en) | 2021-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2020077815A1 (zh) | 一种柔性oled显示面板及其制备方法 | |
| US10749132B2 (en) | Electrode laminate and organic light emitting device element | |
| CN108962946B (zh) | 显示面板及其制造方法 | |
| CN107579081B (zh) | 一种显示面板和显示装置 | |
| WO2010073824A1 (ja) | 表示パネル用の基板、及びそれを備えた表示パネル | |
| CN106024704B (zh) | 一种柔性显示面板及其制作方法和柔性显示装置 | |
| CN109728196A (zh) | 显示面板、其制作方法和显示装置 | |
| US20210358978A1 (en) | Array substrate, display panel, and array substrate fabricating method | |
| US10209584B2 (en) | Manufacturing method of metal layer, functional substrate and manufacturing method thereof, and display device | |
| US20210234136A1 (en) | Display panel motherboard and method of manufacturing display panel motherboard | |
| CN107623087A (zh) | 柔性oled显示面板及其制备方法 | |
| WO2020093478A1 (zh) | 一种tft的制备方法、tft、oled背板和显示装置 | |
| WO2021035950A1 (zh) | 一种柔性衬底基板、柔性显示面板及其制备方法 | |
| TWI546850B (zh) | 顯示面板之製備方法 | |
| US10211234B2 (en) | Display panel | |
| WO2020072394A1 (en) | Systems and methods for forming displays including recessed side electrodes | |
| CN108735763A (zh) | 一种tft阵列基板、显示面板 | |
| KR20170112314A (ko) | 은 또는 은합금을 포함하는 단일막 또는 다층막의 습식 식각 방법, 및 은 또는 은합금을 포함하는 단일막 또는 다층막의 식각액 조성물, 및 박막트렌지스터의 제조방법 및 박막트랜지스터 | |
| US20230341986A1 (en) | Systems and methods for forming wrap around electrodes | |
| US11309340B2 (en) | Display panel | |
| JPS6112241B2 (zh) | ||
| CN113424247B (zh) | 具有树脂基板的装置及其制造方法 | |
| WO2021147700A1 (zh) | 显示基板及其制作方法和显示装置 | |
| WO2021036023A1 (zh) | 一种柔性显示面板制备方法及柔性显示面板 | |
| CN207182942U (zh) | 透明导电性薄膜及触控屏 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181102 |