JP2016099114A - 電子デバイス、物理量センサー、圧力センサー、高度計、電子機器および移動体 - Google Patents

電子デバイス、物理量センサー、圧力センサー、高度計、電子機器および移動体 Download PDF

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Publication number
JP2016099114A
JP2016099114A JP2014233352A JP2014233352A JP2016099114A JP 2016099114 A JP2016099114 A JP 2016099114A JP 2014233352 A JP2014233352 A JP 2014233352A JP 2014233352 A JP2014233352 A JP 2014233352A JP 2016099114 A JP2016099114 A JP 2016099114A
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Prior art keywords
layer
substrate
electronic device
corrosion
physical quantity
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JP2014233352A
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English (en)
Japanese (ja)
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JP2016099114A5 (https=
Inventor
田中　信幸
Nobuyuki Tanaka
信幸 田中
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2014233352A priority Critical patent/JP2016099114A/ja
Priority to CN201510784746.0A priority patent/CN105600735A/zh
Priority to US14/943,315 priority patent/US9682858B2/en
Publication of JP2016099114A publication Critical patent/JP2016099114A/ja
Publication of JP2016099114A5 publication Critical patent/JP2016099114A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
    • B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
    • B81C1/00801—Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
    • G01L5/04—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring tension in flexible members, e.g. ropes, cables, wires, threads, belts or bands
    • G01L5/06—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring tension in flexible members, e.g. ropes, cables, wires, threads, belts or bands using mechanical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0045—Diaphragm associated with a buried cavity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/008—Transmitting or indicating the displacement of flexible diaphragms using piezoelectric devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0136—Growing or depositing of a covering layer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Micromachines (AREA)
  • Geometry (AREA)
JP2014233352A 2014-11-18 2014-11-18 電子デバイス、物理量センサー、圧力センサー、高度計、電子機器および移動体 Withdrawn JP2016099114A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014233352A JP2016099114A (ja) 2014-11-18 2014-11-18 電子デバイス、物理量センサー、圧力センサー、高度計、電子機器および移動体
CN201510784746.0A CN105600735A (zh) 2014-11-18 2015-11-16 电子装置、物理量传感器、压力传感器以及高度计
US14/943,315 US9682858B2 (en) 2014-11-18 2015-11-17 Electronic device, physical quantity sensor, pressure sensor, altimeter, electronic apparatus, and moving object

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014233352A JP2016099114A (ja) 2014-11-18 2014-11-18 電子デバイス、物理量センサー、圧力センサー、高度計、電子機器および移動体

Publications (2)

Publication Number Publication Date
JP2016099114A true JP2016099114A (ja) 2016-05-30
JP2016099114A5 JP2016099114A5 (https=) 2017-11-09

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JP2014233352A Withdrawn JP2016099114A (ja) 2014-11-18 2014-11-18 電子デバイス、物理量センサー、圧力センサー、高度計、電子機器および移動体

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US (1) US9682858B2 (https=)
JP (1) JP2016099114A (https=)
CN (1) CN105600735A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6340985B2 (ja) * 2014-08-12 2018-06-13 セイコーエプソン株式会社 物理量センサー、圧力センサー、高度計、電子機器および移動体
JP2016095267A (ja) * 2014-11-17 2016-05-26 セイコーエプソン株式会社 電子デバイス、物理量センサー、圧力センサー、高度計、電子機器および移動体
JP2016102737A (ja) * 2014-11-28 2016-06-02 セイコーエプソン株式会社 電子デバイス、物理量センサー、圧力センサー、振動子、高度計、電子機器および移動体
DE102017218883A1 (de) * 2017-10-23 2019-04-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikroelektromechanisches Bauteil sowie ein Verfahren zu seiner Herstellung
CN119349503B (zh) * 2024-12-25 2025-10-28 河北美泰电子科技有限公司 基于倒装焊工艺的压力传感器的制备方法及压力传感器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110209555A1 (en) * 2010-03-01 2011-09-01 Marcus Ahles Micromechanical pressure-sensor element and method for its production
JP2012096316A (ja) * 2010-11-02 2012-05-24 Seiko Epson Corp 電子装置および電子装置の製造方法
JP2014086447A (ja) * 2012-10-19 2014-05-12 Seiko Epson Corp 電子装置及びその製造方法
JP2014115209A (ja) * 2012-12-11 2014-06-26 Seiko Epson Corp Ｍｅｍｓ素子、電子デバイス、高度計、電子機器および移動体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070013014A1 (en) * 2005-05-03 2007-01-18 Shuwen Guo High temperature resistant solid state pressure sensor
JP2008114354A (ja) 2006-11-08 2008-05-22 Seiko Epson Corp 電子装置及びその製造方法
JP5630243B2 (ja) 2010-11-30 2014-11-26 セイコーエプソン株式会社 電子装置、電子機器及び電子装置の製造方法
JP2014057125A (ja) * 2012-09-11 2014-03-27 Seiko Epson Corp 電子装置およびその製造方法、並びに発振器
JP2014192435A (ja) * 2013-03-28 2014-10-06 Seiko Epson Corp 電子装置及びその製造方法、並びに発振器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110209555A1 (en) * 2010-03-01 2011-09-01 Marcus Ahles Micromechanical pressure-sensor element and method for its production
JP2012096316A (ja) * 2010-11-02 2012-05-24 Seiko Epson Corp 電子装置および電子装置の製造方法
JP2014086447A (ja) * 2012-10-19 2014-05-12 Seiko Epson Corp 電子装置及びその製造方法
JP2014115209A (ja) * 2012-12-11 2014-06-26 Seiko Epson Corp Ｍｅｍｓ素子、電子デバイス、高度計、電子機器および移動体

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US20160137494A1 (en) 2016-05-19
US9682858B2 (en) 2017-06-20
CN105600735A (zh) 2016-05-25

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