JP2016096195A - 電子装置及び電子装置の製造方法 - Google Patents
電子装置及び電子装置の製造方法 Download PDFInfo
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- JP2016096195A JP2016096195A JP2014230129A JP2014230129A JP2016096195A JP 2016096195 A JP2016096195 A JP 2016096195A JP 2014230129 A JP2014230129 A JP 2014230129A JP 2014230129 A JP2014230129 A JP 2014230129A JP 2016096195 A JP2016096195 A JP 2016096195A
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- H01—ELECTRIC ELEMENTS
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- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
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- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
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Abstract
Description
(1)In−48Sn共晶はんだ
(2)In−48Sn共晶はんだにAgを1wt%添加したIn−Sn−1Ag合金
(3)In−48Sn共晶はんだにAgを5wt%添加したIn−Sn−5Ag合金
(4)In−48Sn共晶はんだにAgを10wt%添加したIn−Sn−10Ag合金
(5)In−48Sn共晶はんだ
(6)In−48Sn共晶はんだにAgを1wt%添加したIn−Sn−1Ag合金
(7)In−48Sn共晶はんだにAgを3wt%添加したIn−Sn−3Ag合金
(8)In−48Sn共晶はんだにAgを5wt%添加したIn−Sn−5Ag合金
次に、第1の実施形態に係る電子装置の製造方法について図5〜図10を用いて説明する。図5〜図10は、第1の実施形態に係る電子装置の製造工程を例示する図である。
本実施形態は、多段階に実装された電子装置についてである。
次に、第2の実施形態に係る電子装置の製造方法について図13〜図21を用いて説明する。図13〜図21は、第2の実施形態に係る電子装置の製造工程を例示する図である。
以上の第1、第2の実施形態を含む実施形態に関し、更に以下の付記を開示する。
(付記1)
第一の電子部品と、
第二の電子部品と、
前記第一の電子部品と前記第二の電子部品とを接続し、AgIn2と、前記AgIn2よりも少ない含有量のAg2Inとを含むIn−Sn−Ag合金からなる第一の接合部と
を含む電子装置。
(付記2)
前記第一の接合部は、Inを43wt%〜60wt%含有することを特徴とする、付記1に記載の電子装置。
(付記3)
前記第一の接合部は、Agを3wt%以下含有することを特徴とする、付記1又は付記2の何れかに記載の電子装置。
(付記4)
更に第三の電子部品と、
前記第二の電子部品と前記第三の電子部品とを接続する第二の接合部と
を含み、
前記第二の接合部は、前記第一の接合部と異なる接合材料からなることを特徴とする、付記1乃至付記3の何れかに記載の電子装置。
(付記5)
Inを43wt%〜60wt%、Agを3wt%以下含有したIn−Sn−Ag合金からなる接合材料を介して、第一の電子部品と第二の電子部品とを接続し、
前記第一の電子部品と前記第二の電子部品とを接続する前記接合材料を、前記In−Sn−Ag合金の固相線温度以上の温度において、第一の冷却速度で冷却し、
前記第一の電子部品と前記第二の電子部品とを接続する前記接合材料を、前記In−Sn−Ag合金の固相線温度以下の温度において、前記第一の冷却速度よりも小さい第二の冷却速度で冷却することを特徴とする電子装置の製造方法。
(付記6)
前記第一の冷却速度は1℃/秒以上の冷却速度であることを特徴とする、付記5に記載の電子装置の製造方法。
(付記7)
前記第二の冷却速度は1℃/秒未満の冷却速度であることを特徴とする、付記5に記載の電子装置の製造方法。
Claims (7)
- 第一の電子部品と、
第二の電子部品と、
前記第一の電子部品と前記第二の電子部品とを接続し、AgIn2と、前記AgIn2よりも少ない含有量のAg2Inとを含むIn−Sn−Ag合金からなる第一の接合部と
を含む電子装置。 - 前記第一の接合部は、Inを43wt%〜60wt%含有することを特徴とする、請求項1に記載の電子装置。
- 前記第一の接合部は、Agを3wt%以下含有することを特徴とする、請求項1又は請求項2の何れかに記載の電子装置。
- 更に第三の電子部品と、
前記第二の電子部品と前記第三の電子部品とを接続する第二の接合部と
を含み、
前記第二の接合部は、前記第一の接合部と異なる接合材料からなることを特徴とする、請求項1乃至請求項3の何れかに記載の電子装置。 - Inを43wt%〜60wt%、Agを3wt%以下含有したIn−Sn−Ag合金からなる接合材料を介して、第一の電子部品と第二の電子部品とを接続し、
前記第一の電子部品と前記第二の電子部品とを接続する前記接合材料を、前記In−Sn−Ag合金の固相線温度以上の温度において、第一の冷却速度で冷却し、
前記第一の電子部品と前記第二の電子部品とを接続する前記接合材料を、前記In−Sn−Ag合金の固相線温度以下の温度において、前記第一の冷却速度よりも小さい第二の冷却速度で冷却することを特徴とする電子装置の製造方法。 - 前記第一の冷却速度は1℃/秒以上の冷却速度であることを特徴とする、請求項5に記載の電子装置の製造方法。
- 前記第二の冷却速度は1℃/秒未満の冷却速度であることを特徴とする、請求項5に記載の電子装置の製造方法。
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JP6455091B2 (ja) | 2019-01-23 |
TW201625376A (zh) | 2016-07-16 |
CN105592636A (zh) | 2016-05-18 |
US9640508B2 (en) | 2017-05-02 |
US20160133595A1 (en) | 2016-05-12 |
TWI561330B (en) | 2016-12-11 |
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