JP2016082230A - ワイヤボンドを有するパワーオーバーレイ構造体およびその製造方法 - Google Patents
ワイヤボンドを有するパワーオーバーレイ構造体およびその製造方法 Download PDFInfo
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- JP2016082230A JP2016082230A JP2015198983A JP2015198983A JP2016082230A JP 2016082230 A JP2016082230 A JP 2016082230A JP 2015198983 A JP2015198983 A JP 2015198983A JP 2015198983 A JP2015198983 A JP 2015198983A JP 2016082230 A JP2016082230 A JP 2016082230A
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- semiconductor device
- dielectric layer
- wire bond
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
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- H10W72/50—Bond wires
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/144—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations comprising foils
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
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- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
- H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
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- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/42—Vias, e.g. via plugs
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- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/43—Layouts of interconnections
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/435—Cross-sectional shapes or dispositions of interconnections
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- H—ELECTRICITY
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- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
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- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
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- H—ELECTRICITY
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
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- H—ELECTRICITY
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
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- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
- H10W72/07552—Controlling the environment, e.g. atmosphere composition or temperature changes in structures or sizes
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
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- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/521—Structures or relative sizes of bond wires
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/521—Structures or relative sizes of bond wires
- H10W72/527—Multiple bond wires having different sizes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
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- H—ELECTRICITY
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- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
- H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
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- H—ELECTRICITY
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- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
- H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/926—Multiple bond pads having different sizes
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- H—ELECTRICITY
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
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- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/934—Cross-sectional shape, i.e. in side view
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/944—Dispositions of multiple bond pads
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/10—Configurations of laterally-adjacent chips
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/512,562 US9613843B2 (en) | 2014-10-13 | 2014-10-13 | Power overlay structure having wirebonds and method of manufacturing same |
| US14/512,562 | 2014-10-13 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021008342A Division JP7254840B2 (ja) | 2014-10-13 | 2021-01-22 | ワイヤボンドを有するパワーオーバーレイ構造体およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2016082230A true JP2016082230A (ja) | 2016-05-16 |
Family
ID=54293117
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015198983A Pending JP2016082230A (ja) | 2014-10-13 | 2015-10-07 | ワイヤボンドを有するパワーオーバーレイ構造体およびその製造方法 |
| JP2021008342A Active JP7254840B2 (ja) | 2014-10-13 | 2021-01-22 | ワイヤボンドを有するパワーオーバーレイ構造体およびその製造方法 |
| JP2023052419A Active JP7704383B2 (ja) | 2014-10-13 | 2023-03-28 | ワイヤボンドを有するパワーオーバーレイ構造体およびその製造方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021008342A Active JP7254840B2 (ja) | 2014-10-13 | 2021-01-22 | ワイヤボンドを有するパワーオーバーレイ構造体およびその製造方法 |
| JP2023052419A Active JP7704383B2 (ja) | 2014-10-13 | 2023-03-28 | ワイヤボンドを有するパワーオーバーレイ構造体およびその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9613843B2 (https=) |
| EP (1) | EP3010038A3 (https=) |
| JP (3) | JP2016082230A (https=) |
| KR (1) | KR102419302B1 (https=) |
| CN (3) | CN105514077B (https=) |
| TW (1) | TWI713470B (https=) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6892023B1 (ja) * | 2020-08-03 | 2021-06-18 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法および電力変換装置 |
| KR20210092835A (ko) * | 2018-12-14 | 2021-07-26 | 제네럴 일렉트릭 컴퍼니 | 전기장 억제가 개선된 고전압 반도체 디바이스 |
| JP2022513218A (ja) * | 2018-12-14 | 2022-02-07 | ゼネラル・エレクトリック・カンパニイ | 電界抑制が向上させられた高電圧半導体装置を製作する方法 |
| JP2024101067A (ja) * | 2017-04-20 | 2024-07-26 | ローム株式会社 | 半導体装置 |
| WO2026009326A1 (ja) * | 2024-07-02 | 2026-01-08 | 三菱電機株式会社 | 半導体装置及び電力変換装置 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9613843B2 (en) * | 2014-10-13 | 2017-04-04 | General Electric Company | Power overlay structure having wirebonds and method of manufacturing same |
| DE102015102535B4 (de) * | 2015-02-23 | 2023-08-03 | Infineon Technologies Ag | Verbundsystem und Verfahren zum haftenden Verbinden eines hygroskopischen Materials |
| US10056319B2 (en) * | 2016-04-29 | 2018-08-21 | Delta Electronics, Inc. | Power module package having patterned insulation metal substrate |
| JP6726112B2 (ja) * | 2017-01-19 | 2020-07-22 | 株式会社 日立パワーデバイス | 半導体装置および電力変換装置 |
| US10541209B2 (en) | 2017-08-03 | 2020-01-21 | General Electric Company | Electronics package including integrated electromagnetic interference shield and method of manufacturing thereof |
| US10804115B2 (en) | 2017-08-03 | 2020-10-13 | General Electric Company | Electronics package with integrated interconnect structure and method of manufacturing thereof |
| US10541153B2 (en) | 2017-08-03 | 2020-01-21 | General Electric Company | Electronics package with integrated interconnect structure and method of manufacturing thereof |
| US10332832B2 (en) | 2017-08-07 | 2019-06-25 | General Electric Company | Method of manufacturing an electronics package using device-last or device-almost last placement |
| USD881189S1 (en) | 2018-02-26 | 2020-04-14 | Samsung Electronics Co., Ltd. | Head-mounted display device |
| US10957832B2 (en) | 2018-10-22 | 2021-03-23 | General Electric Company | Electronics package for light emitting semiconductor devices and method of manufacturing thereof |
| JP7472435B2 (ja) | 2019-05-13 | 2024-04-23 | 富士電機株式会社 | 半導体モジュールの製造方法 |
| CN111162015A (zh) * | 2019-12-20 | 2020-05-15 | 珠海格力电器股份有限公司 | 一种智能功率模块及封装方法 |
| US11776870B2 (en) * | 2020-01-16 | 2023-10-03 | Semiconductor Components Industries, Llc | Direct bonded copper substrates fabricated using silver sintering |
| US11398445B2 (en) | 2020-05-29 | 2022-07-26 | General Electric Company | Mechanical punched via formation in electronics package and electronics package formed thereby |
| EP4012753A1 (en) * | 2020-12-08 | 2022-06-15 | Hitachi Energy Switzerland AG | Semiconductor device, semiconductor module and manufacturing method |
| CN112910285B (zh) * | 2021-01-05 | 2022-06-14 | 深圳市富鑫产业科技有限公司 | 一种逆变器电力系统及其制造方法 |
| US11848244B2 (en) * | 2021-09-30 | 2023-12-19 | Texas Instruments Incorporated | Leaded wafer chip scale packages |
Citations (8)
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| JP2022513218A (ja) * | 2018-12-14 | 2022-02-07 | ゼネラル・エレクトリック・カンパニイ | 電界抑制が向上させられた高電圧半導体装置を製作する方法 |
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| JP2022513216A (ja) * | 2018-12-14 | 2022-02-07 | ゼネラル・エレクトリック・カンパニイ | 電界抑制が向上させられた高電圧半導体装置 |
| KR102841841B1 (ko) * | 2018-12-14 | 2025-08-01 | 제네럴 일렉트릭 컴퍼니 | 전기장 억제가 개선된 고전압 반도체 디바이스 |
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| JP7823093B2 (ja) | 2018-12-14 | 2026-03-03 | ゼネラル・エレクトリック・カンパニイ | 電界抑制が向上させられた高電圧半導体装置を製作する方法 |
| WO2022029828A1 (ja) * | 2020-08-03 | 2022-02-10 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法および電力変換装置 |
| JP6892023B1 (ja) * | 2020-08-03 | 2021-06-18 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法および電力変換装置 |
| WO2026009326A1 (ja) * | 2024-07-02 | 2026-01-08 | 三菱電機株式会社 | 半導体装置及び電力変換装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160043518A (ko) | 2016-04-21 |
| EP3010038A2 (en) | 2016-04-20 |
| US20160104666A1 (en) | 2016-04-14 |
| TW201626468A (zh) | 2016-07-16 |
| CN105514077B (zh) | 2020-03-31 |
| CN111508856A (zh) | 2020-08-07 |
| US9613843B2 (en) | 2017-04-04 |
| CN105514077A (zh) | 2016-04-20 |
| US10204881B2 (en) | 2019-02-12 |
| JP2021061453A (ja) | 2021-04-15 |
| CN116544208A (zh) | 2023-08-04 |
| EP3010038A3 (en) | 2016-07-20 |
| KR102419302B1 (ko) | 2022-07-12 |
| CN111508856B (zh) | 2023-03-21 |
| JP7254840B2 (ja) | 2023-04-10 |
| JP7704383B2 (ja) | 2025-07-08 |
| TWI713470B (zh) | 2020-12-21 |
| JP2023078435A (ja) | 2023-06-06 |
| US20170200692A1 (en) | 2017-07-13 |
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