CN111937127B - 功率半导体芯片上的材料减少的金属板 - Google Patents

功率半导体芯片上的材料减少的金属板 Download PDF

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Publication number
CN111937127B
CN111937127B CN201980024501.4A CN201980024501A CN111937127B CN 111937127 B CN111937127 B CN 111937127B CN 201980024501 A CN201980024501 A CN 201980024501A CN 111937127 B CN111937127 B CN 111937127B
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metal plate
power semiconductor
central portion
semiconductor chip
metal
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CN111937127A (zh
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F·莫恩
A·索科洛夫
柳春雷
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Hitachi Energy Co ltd
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Hitachi Energy Co ltd
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Abstract

功率半导体模块(10)包括具有金属化层(18)的衬底(12)；功率半导体芯片(14)，其结合到衬底(12)的金属化层(18)；以及金属板(24)，其与衬底(12)相反地结合到功率半导体芯片(14)。金属板(24)具有边界(36)，该边界(36)以这种方式被构造使得与金属板(24)的中央部分(34)相比，金属板(24)在边界(36)处具有更少的每单位面积金属材料。

Description

功率半导体芯片上的材料减少的金属板
技术领域
本发明涉及功率半导体模块以及用于制造功率半导体模块的方法。
背景技术
为了利用最新一代硅(Si)和碳化硅(Sic)功率半导体装置的高温能力和高功率密度，需要先进的封装和互连技术来提供足够的可靠性和电流能力。
通常，功率半导体装置(诸如整流器和逆变器)由一个或多个功率半导体模块组装而成，该一个或多个功率半导体模块提供一个或多个功率半导体芯片的壳体和/或电互连。在具有高循环要求的应用中，功率半导体芯片的顶侧互连经常会限制功率半导体模块的寿命。
一种可能性是将金属板结合到半导体芯片的顶侧并且将电互连结合到金属板。例如，这在EP 0520 294 A1中示出。
然而，由于金属板与功率半导体芯片之间的热膨胀系数的不匹配，在主动或被动热循环期间，可能存在施加于功率半导体芯片与金属板之间的结合界面上的相当大应力。该应力可能导致结合层的劣化和/或芯片金属化，而这最终可能会限制互连的寿命。当使用SiC功率半导体芯片时，由于SiC材料的不同机械属性会导致增加的热机械应力，这因此可能会变得更加严重。
为了使热失配引起的应力最小化并且使循环寿命最大化，将尝试使用尽可能薄的金属板。然而，这可能在引线结合过程方面具有缺点。在薄金属顶板的情况下，可能会存在由于芯片顶侧结构损坏所致的损耗，这些损耗是在引线结合过程期间所生成的高力和高功率所引起的。非常薄的金属顶板的另一个缺点可能是这些部件变得难以处理。
US 2007/246 833 A1示出了结合到半导体芯片的金属板。该金属板具有边界，该边界比被用于结合结合引线的中央部分更薄。
JP 2000 307 043 A示出了一种金属板，该金属板的边界比电导体附接到的中央部分更薄。
US 2018/053 737 A1示出了半导体芯片上的金属层，该金属层的边界比结合线所附接到的中央部分更薄。
WO 2017/157 486 A1涉及一种半导体装置并且提到了几种可能性，半导体芯片上的部件能够如何彼此结合并机械加工，诸如烧结、蚀刻和冲压。
JP H01 122 129 A示出了具有用于引线结合的孔的金属焊盘。
发明内容
本发明的目的是提供一种在功率半导体芯片上具有高度可靠的电互连的功率半导体模块，该功率半导体模块易于制造且制造经济。
通过独立权利要求的主题来实现该目的。另外的示例性实施例根据从属权利要求和以下描述而是清楚的。
本发明的一个方面涉及功率半导体模块。也可以称为功率半导体封装的功率半导体模块可以提供一个或多个功率半导体芯片的机械和/或电互连。另外，功率半导体模块可以包括用于一个或多个功率半导体芯片和/或电互连的壳体。
应注意到，此处和下文中的术语“功率”可以涉及被设计成用于处理大于10A的电流和/或大于100V的装置(即，模块和/或芯片)。
根据本发明的实施例，功率半导体模块包括：具有金属化层的衬底、结合到衬底的金属化层的功率半导体芯片、以及以第一表面与衬底相反地结合到功率半导体芯片的金属板。该功率半导体芯片可以结合到衬底，该金属顶板可以结合到功率半导体芯片的顶侧。
该金属板具有中央部分和边界，这两者都结合到功率半导体芯片。该边界可以被设置在金属板的边缘处和/或可以围绕中央部分。
该金属板可以具有两个相反的表面，即，第一下表面和第二上表面。两个表面都可以是平坦的。该金属板可以以整个第一表面结合到功率半导体芯片。特别地，中央部分和/或边界可以以其面对半导体芯片的表面结合到该芯片。
多个金属互连元件在中央部分处结合到金属板的第二表面。该中央部分可以被用于附接电导体。
该金属板的边界以这种方式进行构造使得与金属板的中央部分相比，该金属板在边界处具有更少的每单位面积金属材料。该金属顶板可以在边界或周界处具有专用结构以在热循环期间减小在金属板与功率半导体芯片之间的结合层上的和/或功率半导体芯片的顶侧上的热机械应力。
在边界处，该金属板可以减少金属材料。特别地，可以减少每单位面积金属材料。在这里，术语“每单位面积”可以指代金属板通过沿与金属板、半导体芯片和/或衬底正交的方向观看金属板而限定的面积。金属板的边界可以是金属板在金属板的中央部分外面的部分，该中央部分可以被用于结合电互连元件。该中央部分的面积可以比边界更大。
通过从金属板去除金属材料，例如，通过在边界处机械加工和/或蚀刻金属板，可以在边界处存在更少金属材料。
在金属板在边界处比在中央部分具有更少金属材料的情况下，可以实现顶侧连接的更高循环可靠性和/或改进的过程稳定性和引线结合互连的成品率。这可以满足增加的功率循环寿命需求，这可以是满足增加的电流密度所需要的。
衬底可以由塑料板或陶瓷板制成，该衬底在一侧或两侧上层叠有一个或多个金属化层。该一个或多个金属化层可以由Cu制成。该金属化层可以被构造成用于提供电互连。例如，结合到金属板的电互连元件也可以结合到金属化层。
该功率半导体芯片可以设置半导体装置，诸如二极管、晶体管和/或晶闸管。该功率半导体芯片可以基于作为半导体材料的Si或SiC。该功率半导体芯片可以在一侧或两侧上具有金属电极。在一个功率电极的情况下，功率半导体芯片可以结合到衬底的金属化层。金属板可以结合到相反的功率电极。
在诸如晶体管或晶闸管的功率半导体开关的情况下，功率半导体芯片可以具有另外的栅电极，该另外的栅电极可以被设置在金属板所结合至的同一侧上。
金属板可以是单件式的和/或可以通过机械加工和/或蚀刻预制件来制成。金属板可以由金属材料制成。
根据本发明的实施例，从金属板的提供第二表面的一侧去除金属材料。可以在金属板的一侧(即，第二表面)上设置凹陷和/或孔，该一侧与面对功率半导体芯片的一侧(即，第一表面)相反。以这样的方式，可以增加结合面积。
根据本发明的实施例，金属板的第一表面覆盖功率半导体芯片的电极的50％以上，例如90％以上。针对一个电极可以存在一个金属板。金属板可以(几乎)完全覆盖电极。
根据本发明的实施例，边界围绕金属板的中央部分。金属板在平行于金属板的最大延伸的方向上的所有侧均可以设置有具有减少的金属材料的边界。换句话说，边界可以完全围绕中央部分。
然而，也可能存在这样的边界：其仅部分地围绕中央部分。
根据本发明的实施例，金属板的边界比金属板的中央部分更薄和/或在边界处具有减小的厚度。减少边界处的金属材料的一种可能性是去除边界的整个面积上的金属材料。金属板可以靠近其周界(即，其边界)具有更薄区域。边界处的更薄结构可以具有这样的优点：与具有总体相等厚度的金属板相比，下方结合界面中的热机械应力可以被显著减小。通过使用有限元方法的热机械模拟示出了这个优点。
根据本发明的实施例，边界具有可以设置在第二表面中的凹陷和/或孔。减少金属材料的另外的可能性是通过去除边界的专用区域处的金属材料。所得到的凹陷可以到达金属板的边缘和/或可以被更高区域完全围绕，即，可以是孔。凹陷和/或孔可以沿着全部边界分布。
根据本发明的实施例，边界具有通孔。凹陷和/或孔中的全部或一些可以穿透金属板的厚度，即，孔可以是通孔。然而，也可以可能的是，凹陷和/或孔中的全部或一些仅部分地穿透金属板的厚度。在这种情况下，这些孔可以被看作是凹坑和/或盲孔。
必须注意的是，边界的减小厚度可以与边界中的凹陷和/或孔进行组合。另外，边界可以具有多个不同的厚度。可以使用在靠近金属顶板的边缘的区中具有减小的有效材料质量的金属板的任何解决方案。
根据本发明的实施例，边界的厚度小于100μm，例如，小于50μm。
根据本发明的实施例，金属板的中央部分的厚度大于30μm，例如，大于100μm和/或大于150μm。
根据本发明的实施例，金属板的中央部分是平坦的。该中央部分可以具有恒定厚度。该中央部分中可以不存在具有减少的金属材料的区域。
如已经提到的，多个金属互连元件可以在中央部分结合到金属板。该中央部分可以被用于结合另外的金属元件。例如，结合线可以结合到中央部分和/或金属带可以结合到中央部分。引线结合件可以具有基本圆形横截面。金属带可以具有细长横截面。例如，横截面在一个方向上的直径可以是另一个方向上的直径的5倍。金属带也可以被叫做条带(ribbon band)。
根据本发明的实施例，金属板由Cu制成。而且，一个或多个引线结合件和/或一个或多个金属带可以由Cu制成。
通过将低CTE材料(诸如钼(Mo))用于金属板，可以进一步减小热循环期间的应力。然而，Mo材料可以比Cu材料昂贵得多。
本发明的另外的方面涉及一种用于制造功率半导体模块的方法。必须理解的是，如在上文中和在下文中所描述的方法的特征可以是如在上文中和在下文中所描述的功率半导体模块的特征，以及反之亦然。
根据本发明的实施例，该方法包括：将功率半导体芯片结合到衬底的金属化层；构造金属板的边界，使得与金属板的中央部分相比金属板在边界处具有更少的每单位面积金属材料；以及以第一表面将金属板与衬底相反地结合到功率半导体芯片。中央部分和边界被结合到功率半导体芯片。换句话说，金属板可以被构造并结合到功率半导体芯片的顶部，该功率半导体芯片以另一侧结合到衬底。
该方法进一步包括：在金属板的中央部分处将多个互连元件结合到金属板的第二表面。特别地，互连元件(诸如引线结合件或金属带)可以焊接到金属板。由于减小的边界结构，中央部分可以具有增加的厚度，这可以使得能够结合更粗的引线结合件或金属带。以这样的方式，可以增加顶侧连接的电流能力。
根据本发明的实施例，利用电化学蚀刻来构造金属板的边界。特别地，可以利用两步蚀刻过程来实现具有更薄边界的结构，这可以以很少的附加成本而可行。而且，可以利用蚀刻来实现凹陷和/或孔结构。
根据本发明的实施例，通过冲压来构造金属板的边界。特别地，凹陷和/或孔可以利用冲压来实现。
根据本发明的实施例，金属板被烧结到功率半导体芯片。将金属板结合到功率半导体芯片的电极的一种可能性是烧结。例如，可以使用可以包括银(Ag)和/或铜(Cu)颗粒的微米或纳米颗粒糊剂来将可以由Cu制成的金属板烧结到功率半导体芯片。
然而，也有可能利用另一种过程(诸如，焊接)来结合金属板。
根据本发明的实施例，互连元件被超声焊接到中央部分。例如，引线结合件和/或金属带可以被超声焊接到中央部分。
根据本发明的实施例，互连元件被激光焊接到中央部分。金属带可以被激光焊接到中央部分。在激光焊接的情况下，中央部分的厚度可以是100μm或更大。
总之，可以提供具有高度可靠的芯片顶侧互连的功率半导体模块。金属顶板可以被结合到功率半导体芯片的顶侧，这可以使得能够实现更可靠的电互连，诸如Cu引线结合件。可以在金属顶板中设置更薄边界结构和/或凹坑边界结构，这可以改进金属顶板与功率半导体芯片之间的结合界面的可靠性。这可以使得能够使用更厚的金属顶板，这在Cu引线结合件过程稳定性和成品率方面可以是有利的并且可以通过使用更厚的引线结合件或金属带(诸如条带)来实现顶侧连接的提高的电流能力。
本发明的这些和其他方面参照下文描述的实施例而将是清楚的并且将参照下文描述的实施例进行阐述。
附图说明
将在下面的文本中参照在附图中图示的示例性实施例更详细地解释本发明的主题。
图1示例性地示出了根据本发明的实施例的功率半导体模块的横截面示图。
图2示例性地示出了根据本发明的另外的实施例的功率半导体模块的透视图。
图3示例性地示出了根据本发明的另外的实施例的功率半导体模块的透视图。
图4示例性地示出了根据本发明的另外的实施例的功率半导体模块的横截面图。
图5示意性地示出了根据本发明的另外的实施例的功率半导体模块的横截面图。
图6示意性地示出了根据本发明的另外的实施例的功率半导体模块的俯视图。
图7示出了根据本发明的实施例的用于制造功率半导体模块的方法的流程图。
附图中使用的附图标记及其含义在附图标记列表中以概述形式列出。原则上，相同部件在附图中被提供有相同的附图标记。
具体实施方式
图1示出了包括衬底12的功率半导体模块10，功率半导体芯片14经由第一(底部)功率电极16结合到该衬底12。例如，功率半导体芯片14可以提供二极管、晶闸管和/或晶体管。电极16可以是源电极或发射电极。功率半导体芯片14可以基于Si或SiC。
衬底12可以具有(顶侧)金属化层18，功率半导体芯片14结合到该金属化层18，并且衬底12可以在相反侧具有(底侧)金属化层20。利用金属化层20，衬底12可以结合到功率半导体模块10的基板22。金属化层18可以被构造成提供功率半导体芯片14到功率半导体模块10的其他部件的电连接。金属化层18、20可以由Cu制成。
金属板24结合到功率半导体芯片14的顶侧，该金属板可以由Cu或Mo制成。在与结合到金属化层18的一侧相反的一侧上，功率半导体芯片14具有另外的(顶部)功率电极26，金属板24接合到该功率电极26。还可以的是，功率半导体芯片14在与功率电极26相同的一侧具有栅电极28。电极16、26和28可以由Cu制成。电极26和可选地电极28可以比金属板24薄例如至少五倍。
栅电极可以利用引线结合件30连接到金属化层18的一部分。而且，金属板24以及因此功率电极26可以利用一个或多个另外的引线结合件32连接到金属化层18的一部分，该一个或多个另外的引线结合件32的直径可以比引线结合件30更大。
一个或多个另外的引线结合件32被结合到金属板24的中央部分34。
金属板24构造成使得与中央部分34相比，在边界36处(即，在中央部分34的外侧)具有更少的每单位面积金属材料。在边界处，金属板24具有减少的金属材料。在图1所示的情况下，在与金属板24沿着功率半导体芯片14的延伸方向正交的方向上，边界36比中央部分34更薄。
利用这样的边界36(即，具有减少的金属材料的边界36)，可以减小由热循环引起的应力。
图2示出了具有含有减少的金属材料的边界36的功率半导体模块10的另外的实施例。类似于图1，边界36比中央部分34更薄。边界36具有总体恒定的厚度。如所示的，中央部分34也可以具有恒定的总体厚度。可以在边界36与中央部分34之间设置周缘38。
然而，还可以的是，具有减小的厚度的边界36是倾斜的和/或具有变化的厚度。
图2还示出了边界36完全围绕中央部分34。另外，边界36的宽度在金属板24的所有侧上可以是相同的。
图3示出了边界36的厚度可以与中央部分34相同，但是通过为边界设置凹坑和/或孔40而使金属板24的金属材料在边界36处减少。凹坑和/或孔40可以成一行或多行围绕中央部分34。
图4示出了凹坑和/或孔40可以仅部分地穿透边界36的厚度或者可以完全穿透边界36的厚度，即，可以是通孔。附加地，如图4所示，减小的边界厚度可以与凹坑和/或孔40进行组合。
图4还示出了金属带42可以结合到中央部分34。必须注意的是，这样的金属带42也可以代替引线结合件32或附加于引线结合件32而被用于图1至图6所示的其他实施例中。
在图5中，示出了其他类型的凹陷40'，其可以仅部分地穿透边界36的厚度或者可以完全穿透边界36的厚度。再一次，边界36的厚度与中央部分34的厚度相比可以相等或更小。
如图6所示，凹陷40'可以围绕中央部分34成行设置，该行可以完全围绕中央部分。与孔40相反，凹陷40'可以延伸到金属板24的边缘。
图7示出了用于制造如图1至图6所示的功率半导体模块10的方法的流程图。
在步骤S10中，功率半导体芯片14以其功率电极16结合到衬底12的金属化层18。该结合可以通过焊接或烧结来执行。可以使用与关于步骤S14所描述的相同的烧结过程。
在步骤S12中，金属板24的边界36被构造成使得与金属板24的中央部分34相比，金属板24在边界36处具有更少的每单位面积金属材料。
可以利用电化学蚀刻来构造金属板24的边界36。如图1至图4所示，可以利用电化学蚀刻来产生不同厚度的边界36。如图3至图6所示，可以利用电化学蚀刻来产生凹陷40'和/或孔40。
附加地或替换地，通过冲压来构造金属板24的边界36。如关于图3至图6所示，可以利用电化学蚀刻来产生凹陷40'和/或孔40。
在步骤S14中，将金属板24与衬底12相反地结合到功率半导体芯片14。
金属板24被烧结到功率半导体芯片14。例如，金属板24可以利用例如由Ag或Cu制成的纳米颗粒烧结到功率半导体芯片14。
在步骤S16中，互连元件32、42中的一个或多个被结合到金属板24的中央部分34。
例如，互连元件32、42(诸如引线结合件32)可以被超声焊接到中央部分34。还可以的是，诸如金属带42之类的互连元件32、42被激光焊接到中央部分34。
虽然已经在附图和前面的描述中图示和描述了本发明，但是这样的图示和描述将被认为是说明性的或示例性的而非限制性的；本发明不限于所公开的实施例。根据对附图、公开内容和所附权利要求的研究，对所公开实施例的其他变化可以被本领域中的并且实践所要求保护的发明的技术人员理解和实现。在权利要求中，词语“包括”不排除其他元件或步骤，并且不定冠词“一”或“一个”不排除多个。单个处理器或控制器或其他单元可以实现权利要求中所叙述的若干个项的功能。在相互不同的从属权利要求中记载了某些措施这一纯粹事实并不指示这些措施的组合不能被用来获利。权利要求中的任何附图标记不应被解释为限制范围。
附图说明列表
10 功率半导体模块
12 衬底
14 功率半导体芯片
16 功率电极
18 金属化层
20 金属化层
22 基板
24 金属板
26 功率电极
28 栅电极
30 引线结合件
32 引线结合件
34 中央部分
36 边界
38 周缘
40 孔
40' 凹陷
42 金属带

Claims (12)

1.一种功率半导体模块(10)，所述功率半导体模块包括：
衬底(12)，所述衬底具有金属化层(18)；
功率半导体芯片(14)，所述功率半导体芯片被结合到所述衬底(12)的所述金属化层(18)；
金属板(24)，所述金属板通过焊接和烧结中的至少一种以第一表面与所述衬底(12)相反地结合到所述功率半导体芯片(14)，所述金属板(24)具有中央部分以及边界，所述中央部分以及所述边界都结合到所述功率半导体芯片(14)；
其中，多个金属互连元件(32、42)在所述中央部分(34)处结合到所述金属板(24)的第二表面；
其中，所述金属板(24)的所述边界(36)构造成使得与所述金属板(24)的中央部分(34)相比，所述金属板(24)在所述边界(36)处具有更少的每单位面积金属材料，其中，所述边界(36)在所述第二表面围绕中央部分具有成行设置的凹陷(40')和孔(40)中的至少一种。
2.根据权利要求1所述的功率半导体模块(10)，
其中，所述金属板的所述第一表面覆盖所述功率半导体芯片(14)的电极(26)的50％以上。
3.根据权利要求1所述的功率半导体模块(10)，
其中，所述金属板(24)的所述边界(36)比所述金属板(24)的所述中央部分(34)更薄。
4.根据权利要求1所述的功率半导体模块(10)，
其中，所述边界(36)具有通孔(40)。
5.根据权利要求1所述的功率半导体模块(10)，
其中，所述金属板(24)的所述边界(36)中的至少一个的厚度小于100μm；以及
所述金属板(24)的所述中央部分(34)的厚度大于30μm。
6.根据权利要求1-5中任一项所述的功率半导体模块(10)，
其中，所述金属板(24)的所述中央部分(34)中的至少一个是平坦的。
7.根据权利要求1-5中任一项所述的功率半导体模块(10)，
其中，所述金属互连元件是结合线和金属带中的一种。
8.根据前述权利要求1-5中任一项所述的功率半导体模块(10)，
其中，所述金属板(24)由Cu制成。
9.一种制造功率半导体模块(10)的方法，所述方法包括：
将功率半导体芯片(14)结合到衬底(12)的金属化层(18)；
构造金属板(24)的边界(36)，使得与所述金属板(24)的中央部分(34)相比，所述金属板(24)在边界(36)处具有更少的每单位面积金属材料，其中，所述边界(36)在第二表面围绕中央部分具有成行设置的凹陷(40')和孔(40)中的至少一种；
通过焊接和烧结中的至少一种将所述金属板(24)以第一表面与衬底(12)相反地结合到所述功率半导体芯片(14)，其中，所述中央部分(34)和所述边界(36)被结合到所述功率半导体芯片(14)；
在所述金属板(24)的所述中央部分(34)处将多个互连元件(32、42)结合到所述金属板(24)的第二表面。
10.根据权利要求9所述的方法，
其中，利用电化学蚀刻来构造所述金属板(24)的所述边界(36)。
11.根据权利要求9所述的方法，
其中，通过冲压来构造所述金属板(24)的所述边界(36)。
12.根据权利要求9或10所述的方法，
其中，所述互连元件(32、42)被超声焊接到所述中央部分(34)；或者
其中，所述互连元件(32、42)被激光焊接到所述中央部分(34)。
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