JP2016082010A5 - - Google Patents
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- Publication number
- JP2016082010A5 JP2016082010A5 JP2014210316A JP2014210316A JP2016082010A5 JP 2016082010 A5 JP2016082010 A5 JP 2016082010A5 JP 2014210316 A JP2014210316 A JP 2014210316A JP 2014210316 A JP2014210316 A JP 2014210316A JP 2016082010 A5 JP2016082010 A5 JP 2016082010A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon nitride
- nitride film
- range
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000007789 gas Substances 0.000 claims description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 150000001282 organosilanes Chemical class 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical class O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- 125000004435 hydrogen atoms Chemical group [H]* 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014210316A JP6236709B2 (ja) | 2014-10-14 | 2014-10-14 | シリコン窒化膜の製造方法及びシリコン窒化膜 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014210316A JP6236709B2 (ja) | 2014-10-14 | 2014-10-14 | シリコン窒化膜の製造方法及びシリコン窒化膜 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016082010A JP2016082010A (ja) | 2016-05-16 |
| JP2016082010A5 true JP2016082010A5 (ko) | 2016-12-08 |
| JP6236709B2 JP6236709B2 (ja) | 2017-11-29 |
Family
ID=55959113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014210316A Active JP6236709B2 (ja) | 2014-10-14 | 2014-10-14 | シリコン窒化膜の製造方法及びシリコン窒化膜 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6236709B2 (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2565221B2 (en) | 2011-08-30 | 2018-08-08 | Borealis AG | Process for the manufacture of a capacitor film |
| KR102418092B1 (ko) * | 2016-03-11 | 2022-07-06 | 다이요 닛산 가부시키가이샤 | 실리콘 질화막의 제조 방법 및 실리콘 질화막 |
| JP7196074B2 (ja) | 2016-08-30 | 2022-12-26 | ダブリュー・アール・グレース・アンド・カンパニー－コーン | ポリオレフィンの製造のための触媒系並びに同触媒系を作製及び使用する方法 |
| JP6616365B2 (ja) * | 2017-09-11 | 2019-12-04 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体 |
| JP6997000B2 (ja) * | 2018-02-14 | 2022-01-17 | Ｓｐｐテクノロジーズ株式会社 | シリコン窒化膜の製造方法及び製造装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002017374A1 (en) * | 2000-08-18 | 2002-02-28 | Tokyo Electron Limited | Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof |
| KR100771800B1 (ko) * | 2003-01-24 | 2007-10-30 | 도쿄 엘렉트론 가부시키가이샤 | 피처리 기판 상에 실리콘 질화막을 형성하는 ｃｖｄ 방법 |
| JP4228150B2 (ja) * | 2005-03-23 | 2009-02-25 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
| JP2010103484A (ja) * | 2008-09-29 | 2010-05-06 | Adeka Corp | 半導体デバイス、その製造装置及び製造方法 |
| JP5731841B2 (ja) * | 2011-02-02 | 2015-06-10 | 大陽日酸株式会社 | シリコン窒化膜の形成方法 |
| JP5922352B2 (ja) * | 2011-08-11 | 2016-05-24 | Ｓｐｐテクノロジーズ株式会社 | 窒化膜の製造装置及びその製造方法、並びにその製造プログラム |
| US8592328B2 (en) * | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
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2014
- 2014-10-14 JP JP2014210316A patent/JP6236709B2/ja active Active
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