JP2016074068A - スライス方法 - Google Patents
スライス方法 Download PDFInfo
- Publication number
- JP2016074068A JP2016074068A JP2014207004A JP2014207004A JP2016074068A JP 2016074068 A JP2016074068 A JP 2016074068A JP 2014207004 A JP2014207004 A JP 2014207004A JP 2014207004 A JP2014207004 A JP 2014207004A JP 2016074068 A JP2016074068 A JP 2016074068A
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- JP
- Japan
- Prior art keywords
- workpiece
- water
- wire
- groove
- slicing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 75
- 239000013078 crystal Substances 0.000 claims abstract description 30
- 238000001816 cooling Methods 0.000 claims abstract description 21
- 238000005520 cutting process Methods 0.000 claims abstract description 10
- 238000007710 freezing Methods 0.000 claims abstract description 10
- 230000008014 freezing Effects 0.000 claims abstract description 10
- 238000005507 spraying Methods 0.000 claims abstract 2
- 239000007921 spray Substances 0.000 claims description 27
- 238000002347 injection Methods 0.000 abstract description 17
- 239000007924 injection Substances 0.000 abstract description 17
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000000243 solution Substances 0.000 abstract description 2
- XLYOFNOQVPJJNP-DYCDLGHISA-N deuterium hydrogen oxide Chemical compound [2H]O XLYOFNOQVPJJNP-DYCDLGHISA-N 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 34
- 238000003754 machining Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 6
- 238000004781 supercooling Methods 0.000 description 6
- 239000006061 abrasive grain Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
11、31 ワイヤー
21a、25a、27 冷却手段
23、33 水噴射ノズル(ノズル)
28、38 溝(加工溝)
32 噴霧ノズル(ノズル)
D 水
F 氷
W 被加工物(結晶インゴット)
Claims (2)
- ワイヤーソー装置で結晶インゴットをスライスするスライス方法であって、
該ワイヤーソー装置のワイヤーを結晶インゴットに切込ませ溝を形成する溝形成工程と、
結晶インゴットを冷却手段により冷却させ、該溝形成工程で形成された該溝にノズルから水または水滴もしくは噴霧を吹きかけ該溝に浸入させ氷結させる氷結工程と、
からなるスライス方法。 - 該氷結工程は、過冷却水を該ノズルから該溝に吹きかけ該過冷却水を氷結させる請求項1記載のスライス方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014207004A JP6377485B2 (ja) | 2014-10-08 | 2014-10-08 | スライス方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014207004A JP6377485B2 (ja) | 2014-10-08 | 2014-10-08 | スライス方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016074068A true JP2016074068A (ja) | 2016-05-12 |
JP6377485B2 JP6377485B2 (ja) | 2018-08-22 |
Family
ID=55950561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014207004A Active JP6377485B2 (ja) | 2014-10-08 | 2014-10-08 | スライス方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6377485B2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021184583A1 (zh) * | 2020-03-16 | 2021-09-23 | 严东芳 | 一种水晶加工用切割打磨一体设备 |
JP7041932B1 (ja) * | 2021-12-20 | 2022-03-25 | 有限会社サクセス | 半導体結晶ウェハの製造方法および製造装置 |
JP7100864B1 (ja) * | 2021-12-23 | 2022-07-14 | 有限会社サクセス | 半導体結晶ウェハの製造方法および製造装置 |
TWI795330B (zh) * | 2021-12-23 | 2023-03-01 | 日商薩克瑟斯有限公司 | 半導體結晶晶圓的製造方法及製造裝置 |
JP2023091696A (ja) * | 2021-12-20 | 2023-06-30 | 有限会社サクセス | 半導体結晶ウェハの製造方法および製造装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020026667A1 (ja) | 2018-08-02 | 2020-02-06 | 本田技研工業株式会社 | 縫製装置及び縫製方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06275711A (ja) * | 1993-03-22 | 1994-09-30 | Nippon Steel Corp | スライスブレードの冷却装置 |
JPH10296718A (ja) * | 1997-03-21 | 1998-11-10 | Wacker Siltronic G Fuer Halbleitermaterialien Ag | 帯鋸および加工片からの薄片切断方法 |
JP2002203817A (ja) * | 2000-12-28 | 2002-07-19 | Morix Co Ltd | 半導体チップの製造方法および製造装置 |
JP2008270627A (ja) * | 2007-04-24 | 2008-11-06 | Rix Corp | ダイシング装置およびダイシング方法 |
-
2014
- 2014-10-08 JP JP2014207004A patent/JP6377485B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06275711A (ja) * | 1993-03-22 | 1994-09-30 | Nippon Steel Corp | スライスブレードの冷却装置 |
JPH10296718A (ja) * | 1997-03-21 | 1998-11-10 | Wacker Siltronic G Fuer Halbleitermaterialien Ag | 帯鋸および加工片からの薄片切断方法 |
JP2002203817A (ja) * | 2000-12-28 | 2002-07-19 | Morix Co Ltd | 半導体チップの製造方法および製造装置 |
JP2008270627A (ja) * | 2007-04-24 | 2008-11-06 | Rix Corp | ダイシング装置およびダイシング方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021184583A1 (zh) * | 2020-03-16 | 2021-09-23 | 严东芳 | 一种水晶加工用切割打磨一体设备 |
JP7041932B1 (ja) * | 2021-12-20 | 2022-03-25 | 有限会社サクセス | 半導体結晶ウェハの製造方法および製造装置 |
JP2023091696A (ja) * | 2021-12-20 | 2023-06-30 | 有限会社サクセス | 半導体結晶ウェハの製造方法および製造装置 |
JP7100864B1 (ja) * | 2021-12-23 | 2022-07-14 | 有限会社サクセス | 半導体結晶ウェハの製造方法および製造装置 |
TWI795330B (zh) * | 2021-12-23 | 2023-03-01 | 日商薩克瑟斯有限公司 | 半導體結晶晶圓的製造方法及製造裝置 |
WO2023119703A1 (ja) * | 2021-12-23 | 2023-06-29 | 有限会社サクセス | 半導体結晶ウェハの製造方法および製造装置 |
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Publication number | Publication date |
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JP6377485B2 (ja) | 2018-08-22 |
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