JP2016066708A - 圧電組成物、圧電素子およびスパッタリングターゲット - Google Patents
圧電組成物、圧電素子およびスパッタリングターゲット Download PDFInfo
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- JP2016066708A JP2016066708A JP2014194790A JP2014194790A JP2016066708A JP 2016066708 A JP2016066708 A JP 2016066708A JP 2014194790 A JP2014194790 A JP 2014194790A JP 2014194790 A JP2014194790 A JP 2014194790A JP 2016066708 A JP2016066708 A JP 2016066708A
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
Abstract
【解決手段】(K1−x−yNaxLiy)q(Nb1−zTaz)O3・・・(1)(0.20≦x≦0.80、0.02≦y≦0.10、0.01≦z≦0.30、0.800≦q≦1.050)、SrZrO3・・・(2)、Ba(Nb1−wTaw)2O6・・・(3)(0.01≦w≦0.30)、(Bi0.5Na0.5)TiO3および/または(Bi0.5K0.5)TiO3・・・(4)、(1−m−n−p)A+mB+nC+pD・・・(5)(Aは(1)、Bは(2)、Cは(3)、Dは(4)に各々示した複合酸化物。0.04≦m≦0.07、0<n≦0.010、0.001≦p≦0.020)を主成分とする圧電組成物とする。
【選択図】図1
Description
(K1−x−yNaxLiy)q(Nb1−zTaz)O3・・・(1)
(ただし式中xは0.20≦x≦0.80、yは0.02≦y≦0.10、zは0.01≦z≦0.30、qは0.800≦q≦1.050)
SrZrO3・・・(2)
Ba(Nb1−wTaw)2O6・・・(3)
(ただし式中wは0.01≦w≦0.30)
(Bi0.5Na0.5)TiO3および/または(Bi0.5K0.5)TiO3・・・(4)
(1−m−n−p)A+mB+nC+pD・・・(5)
(ただし式中Aは上記式(1)に示した複合酸化物、Bは上記式(2)に示した複合酸化物、Cは上記式(3)に示した複合酸化物、Dは上記式(4)に示した複合酸化物をそれぞれ表し、式中mは0.04≦m≦0.07、nは0<n≦0.010、pは0.001≦p≦0.020)。
(1−s)E+sF・・・(6)
(ただし式中Eは上記式(5)に示した主成分の複合酸化物、Fは前記副成分をそれぞれ示し、式中sは0<s≦0.015)。
主成分である複合酸化物の結晶粒の粒界にマンガン(Mn)及び銅(Cu)の少なくとも一方の元素が偏在している微細構造を有しており、これによって圧電組成物の比抵抗を高くすることが可能となり、バラツキの少ない安定した圧電組成物を得ることができる。
(K1−x−yNaxLiy)q(Nb1−zTaz)O3・・・(1)
(ただし式中xは0.20≦x≦0.80、yは0.02≦y≦0.10、zは0.01≦z≦0.30、qは0.800≦q≦1.050)
SrZrO3・・・(2)
Ba(Nb1−wTaw)2O6・・・(3)
(ただし式中wは0.01≦w≦0.30)
(Bi0.5Na0.5)TiO3および/または(Bi0.5K0.5)TiO3・・・(4)
(1−m−n−p)A+mB+nC+pD・・・(5)
(式中、Aは上記式(1)に示した複合酸化物、Bは上記式(2)に示した複合酸化物、Cは上記式(3)に示した複合酸化物、Dは上記式(4)に示した複合酸化物をそれぞれ表し、式中mは0.04≦m≦0.07、nは0<n≦0.010、pは0.001≦p≦0.020)。
(1−s)E+sF・・・(6)
(ただし式中Eは上記式(5)に示した主成分の複合酸化物、Fは前記副成分をそれぞれ示し、式中sは0<s≦0.015)。
主成分である複合酸化物の結晶粒の粒界にマンガン(Mn)及び銅(Cu)の少なくとも一方の元素が偏在している微細構造を有しており、これによって圧電組成物の比抵抗を高くすることが可能となり、バラツキの少ない安定した圧電組成物を得ることができる。
電極2、3は、例えば、銀(Ag)、金(Au)などの金属によりそれぞれ構成されている。これら電極2、3には、ワイヤなどを介して外部電源と電気的に接続される(図示しない)。
このような圧電素子は、例えば、本実施の形態の圧電組成物を必要に応じて加工して圧電基板1を形成し、電極2、3を設け、加熱したシリコーンオイル中で電界を印加することで分極処理を行うことによって製造することができる。
まず、主成分および副成分の原料として、炭酸ナトリウム(Na2CO3)粉末、炭酸カリウム(K2CO3)粉末、炭酸リチウム(Li2CO3)粉末、酸化ニオブ(Nb2O5)粉末、酸化タンタル(Ta2O5)粉末、炭酸バリウム(BaCO3)粉末、酸化ジルコニウム(ZrO2)粉末、炭酸ストロンチウム(SrCO3)粉末、酸化ビスマス(Bi2O3)粉末、酸化チタン(TiO2)粉末、および炭酸マンガン(MnCO3)粉末または酸化銅(CuO)粉末を用意した。これらの原料を十分に乾燥させた後、圧電組成物の組成が実施例1〜5、26、27および比較例1〜2の組成、つまりpの値が変化するように各原料を秤量した。
成形した後、この成形体を550℃で3時間加熱して脱バインダを行い、更に1050℃〜1200℃で2時間焼成した。その後、この焼成体を厚さ0.6mmの円板状に加工して圧電基板1を作製し、両面に銀(Ag)を真空蒸着して電極2、3を形成した。その後、150℃のシリコーンオイル中で5MV/mの電界を10〜30分印加して分極処理を行い圧電素子とした。
(評価結果)
各実施例および比較例の圧電組成物の組成、20℃での比誘電率(εr)、電気機械結合係数(kr)、εr 1/2×krおよび20℃を基準として−40℃〜85℃の温度領域でのεr 1/2×krの変化率の絶対値の最大値を表1に示す。
圧電特性は、高いことが好ましいので、εr 1/2×krの値が12以上を好ましいと判定し〇とし、12未満を好ましくないと判定し×とした。温度変化率は、小さいことが好ましいので、εr 1/2×krの温度変化率の絶対値の最大値が10%以下をより好ましいと判定し◎とし、10%より大きく20%以下を好ましいと判定し○とし、20%より大きい場合を好ましくないと判定し×とした。
また、x、y、z、m、n、qの値が変化するよう、各原料を秤量した以外は実施例1〜5と同様の方法により、実施例6〜22、比較例3〜14の試料を作製し、評価を行い、その結果も表1に示した。
また、添加物である酸化マンガン(MnO)の量が変化するように秤量した以外は実施例1〜5と同様の方法により、実施例23〜24、比較例15の試料を作製し、評価を行い、その結果も表1に示した。また、実施例25では、酸化マンガン(MnO)の代わりに酸化銅(CuO)を秤量、添加し、実施例1〜4と同様の方法で試料を作製し、評価を行い、その結果も表1に示した。
加えて、上記実施の形態では、単板構造の圧電素子を例に挙げて説明したが、積層構造など他の構造を有する圧電素子についても、本発明を同様に適用することができる。また、圧電素子としてアクチュエータなどの振動素子、発音体およびセンサを例に挙げたが、他の圧電素子についても本発明を適用することができる。またスパッタリングターゲットやそれを用いて作製した圧電素子にも適用できる。
1a、1b 対向面
2、3 電極
Claims (4)
- 下記式(1)に示した第1のペロブスカイト型酸化物と、下記式(2)に示した第2のペロブスカイト型酸化物と、下記式(3)に示したタングステンブロンズ型酸化物と、下記式(4)に示した第3のペロブスカイト型酸化物とを含む式(5)に示した組成物を主成分とする圧電組成物。
(K1−x−yNaxLiy)q(Nb1−zTaz)O3・・・(1)
(ただし式中xは0.20≦x≦0.80、yは0.02≦y≦0.10、zは0.01≦z≦0.30、qは0.800≦q≦1.050)
SrZrO3・・・(2)
Ba(Nb1−wTaw)2O6・・・(3)
(ただし式中wは0.01≦w≦0.30)
(Bi0.5Na0.5)TiO3および/または(Bi0.5K0.5)TiO3・・・(4)
(1−m−n−p)A+mB+nC+pD・・・(5)
(式中、Aは上記式(1)に示した複合酸化物、Bは上記式(2)に示した複合酸化物、Cは上記式(3)に示した複合酸化物、Dは上記式(4)に示した複合酸化物をそれぞれ表し、式中mは0.04≦m≦0.07、nは0<n≦0.010、pは0.001≦p≦0.020)。 - さらに副成分として、マンガン(Mn)及び銅(Cu)の少なくとも一種を含み、前記副成分を酸化マンガン(MnO)、酸化銅(CuO)にそれぞれ換算したときに、下記式(6)に示す圧電組成物であることを特徴とする請求項1記載の圧電組成物。
(1−s)E+sF・・・(6)
(ただし式中Eは上記式(5)に示した主成分の複合酸化物、Fは前記副成分をそれぞれ示し、式中sは0<s≦0.015)。 - 圧電基板の表面に外部電極が形成された圧電素子において、該圧電組成物が、請求項1または2のいずれかに記載の圧電組成物で形成されていることを特徴する圧電素子。
- 請求項1または2のいずれかに記載の圧電組成物で形成されていることを特徴するスパッタリングターゲット。
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