JP2016042554A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 230000005684 electric field Effects 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000004020 conductor Substances 0.000 claims abstract description 6
- 230000005669 field effect Effects 0.000 claims description 16
- 230000002040 relaxant effect Effects 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 description 184
- 229910052751 metal Inorganic materials 0.000 description 32
- 239000002184 metal Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 16
- 239000012535 impurity Substances 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
【解決手段】半導体基板(12)と、半導体基板の主面部に形成されるとともに、主面部に垂直な方向から見て所定の幅で所定の方向に延伸された延伸部を含む形状の第1導電型の第1の半導体領域(14)と、第1の半導体領域から離間して主面部に形成されるとともに、主面部に垂直な方向から見て第1の半導体領域の延伸部に沿う部分を含む形状の第1導電型の第2の半導体領域(16)と、主面部の第2の半導体領域側に形成されるとともに、第2導電型の半導体層で形成された第1の半導体領域と第2の半導体領域との間に発生する電界を緩和する電界緩和層(26a)と、第2の半導体領域に接続されかつ第1の半導体領域側の端部(PA)が電界緩和層の範囲内に位置する導電体(30)と、を備える。
【選択図】図2
Description
つぎに、該プレ酸化膜上にフォトレジストを塗布した後、フォトリソグラフィによりパターニングしてドリフト層22に対応する部分に開口を有するマスクを形成する。その後、該マスクによりプレ酸化膜をエッチングして、開口を形成する。
つぎに、該保護酸化膜を通してプレ酸化膜の上記開口から、イオン注入法によりN型不純物、たとえばP(リン)を打ち込み、拡散させて、N型のドリフト層22を形成する。
つぎに、ウエハを熱処理してドライブインを行う。つまり、ドリフト層22に打ち込んだPを活性化させるとともに、ドリフト層22の領域の調整を行う(図4(a)参照)。
つぎに、該マスクを用いてイオン注入法によりP型不純物、たとえばB(ボロン)を上記開口を通して打ち込み、拡散させて、P型のVt調整層24を形成する(図4(a)参照)。
つぎに、このマスクを用いて熱酸化処理を行い、フィールド酸化膜(LOCOS酸化膜)20を形成する(図4(b)参照)。
つぎに、パッド酸化膜70をエッチング等により除去する。
つぎに、フォトレジストを塗布した後フォトリソグラフィによりパターニングし、電界緩和層26aに対応する部分に開口を有するマスク74を形成する。
つぎに、犠牲酸化膜をエッチング等により除去する。
つぎに、ゲート酸化膜76上に、CVD法等によりポリシリコン膜78を形成する。
つぎに、ポリシリコン膜78上に、CVD法等により厚さ約10nmのゲートNSG(Non doped Silicate Glass)膜80を形成する。
つぎに、レジストを除去する。
つぎに、CVD法により全面にNSGを形成する。
つぎに、サイドウォール36を形成するためのマスクをフォトリソグラフィにより形成し、該マスクを用いてエッチングし、サイドウォール36を形成する(図5(b)参照)。
つぎに、ソース層14を形成するためのマスクをフォトリソグラフィにより形成し、該マスクを用いてイオン注入法によりN型不純物、たとえばAs(ヒ素)を打ち込み、拡散させて、N型のソース層14を形成する。
12、112 基板
14、114 ソース層
16、116 ドレイン層
18、118 ゲート電極
20、120 フィールド酸化膜
22、122 ドリフト層
24、124 Vt調整層
26a、26b、126 電界緩和層
28、128 サブコンタクト層
30、130 金属配線
32、132 コンタクト
34 ゲートシリコン酸化膜
36 サイドウォール
38 層間絶縁膜
50 電界効果トランジスタ
70 パッド酸化膜
72 SiN膜
74 マスク
76 ゲート酸化膜
78 ポリシリコン膜
80 ゲートNSG膜
F フィンガー部
PF 先端部
Claims (8)
- 半導体基板と、
前記半導体基板の主面部に形成されるとともに、前記主面部に垂直な方向から見て所定の幅で所定の方向に延伸された延伸部を含む形状の第1導電型の第1の半導体領域と、
前記第1の半導体領域から離間して前記主面部に形成されるとともに、前記主面部に垂直な方向から見て前記第1の半導体領域の前記延伸部に沿う部分を含む形状の第1導電型の第2の半導体領域と、
前記主面部の前記第2の半導体領域側に形成されるとともに、前記第1導電型と異なる導電型である第2導電型の半導体層で形成された前記第1の半導体領域と前記第2の半導体領域との間に発生する電界を緩和する電界緩和層と、
前記第2の半導体領域に接続されかつ前記第1の半導体領域側の端部が前記電界緩和層の範囲内に位置する導電体と、
を備える半導体装置。 - 前記第2の半導体領域は、前記延伸部に沿う部分を含む島状の形状に形成され、
前記第1の半導体領域は、前記延伸部を含むとともに前記第2の半導体領域を囲む形状に形成される
請求項1に記載の半導体装置。 - 前記延伸部の延伸方向の先端の形状が前記主面部に垂直な方向から見て半円形状である 請求項1または請求項2に記載の半導体装置。
- 前記導電体の端部は、前記電界緩和層の前記第1の半導体領域側の端部より2μm〜4μmの位置に配置される
請求項1〜請求項3のいずれか1項に記載の半導体装置。 - 前記第1の半導体領域と前記第2の半導体領域との間の前記主面部に形成されるとともに前記第1の半導体領域と前記第2の半導体領域とを分離する絶縁体をさらに備え、
前記電界緩和層は前記絶縁体の下部の前記主面部に形成される
請求項1〜請求項4のいずれか1項に記載の半導体装置。 - 前記第1の半導体領域をソースとし、前記第2の半導体領域をドレインとし、前記ドレインが前記ソースに囲まれた電界効果トランジスタと、
前記ドレインの少なくとも一部および前記電界緩和層の少なくとも一部が含まれるように前記主面部に形成されるとともに前記第1導電型の半導体層で形成されたドリフト層と、
前記ソースの少なくとも一部が含まれるように前記主面部に形成されるとともに前記第2導電型の半導体層で形成されたしきい値調整層と、をさらに含み、
前記延伸部の近傍における相互に対向する前記ドリフト層と前記しきい値調整層との距離が、前記延伸部の近傍以外における相互に対向する前記ドリフト層と前記しきい値調整層との距離よりも長くされている
請求項1〜請求項5のいずれか1項に記載の半導体装置。 - 前記ドリフト層は前記電界緩和層の全体が含まれるように形成される
請求項6に記載の半導体装置。 - 半導体基板の主面部に第1導電型の半導体層からなる電界を緩和する電界緩和層を形成する工程と、
前記電界緩和層の一端から離間した前記主面部に、前記主面部に垂直な方向から見て所定の幅で所定の方向に延伸された延伸部を含む形状に前記第1導電型と異なる導電型の第2導電型の第1の半導体領域を形成する工程と、
前記電界緩和層の他端から離間した前記主面部に、前記主面部に垂直な方向から見て前記第1の半導体領域の前記延伸部に沿う部分を含む形状に前記第2導電型の第2の半導体領域を形成する工程と、
前記第2の半導体領域に接続されかつ前記第1の半導体領域側の端部が前記電界緩和層の範囲内に位置するように導電体を形成する工程と、
を含む半導体装置の製造方法。
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JP2002270830A (ja) * | 2001-03-12 | 2002-09-20 | Fuji Electric Co Ltd | 半導体装置 |
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JP2005079317A (ja) * | 2003-08-29 | 2005-03-24 | Matsushita Electric Ind Co Ltd | 半導体装置 |
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JP2005079317A (ja) * | 2003-08-29 | 2005-03-24 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2005085975A (ja) * | 2003-09-09 | 2005-03-31 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2010016041A (ja) * | 2008-07-01 | 2010-01-21 | Sharp Corp | 半導体装置 |
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