JP2015529793A5 - - Google Patents

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Publication number
JP2015529793A5
JP2015529793A5 JP2015517891A JP2015517891A JP2015529793A5 JP 2015529793 A5 JP2015529793 A5 JP 2015529793A5 JP 2015517891 A JP2015517891 A JP 2015517891A JP 2015517891 A JP2015517891 A JP 2015517891A JP 2015529793 A5 JP2015529793 A5 JP 2015529793A5
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JP
Japan
Prior art keywords
thin film
film transistor
substrate
radiation detector
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2015517891A
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English (en)
Japanese (ja)
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JP2015529793A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/IB2013/054845 external-priority patent/WO2013190434A1/en
Publication of JP2015529793A publication Critical patent/JP2015529793A/ja
Publication of JP2015529793A5 publication Critical patent/JP2015529793A5/ja
Withdrawn legal-status Critical Current

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JP2015517891A 2012-06-20 2013-06-13 有機フォトダイオードを有する放射線検出器 Withdrawn JP2015529793A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261661889P 2012-06-20 2012-06-20
US61/661,889 2012-06-20
PCT/IB2013/054845 WO2013190434A1 (en) 2012-06-20 2013-06-13 Radiation detector with an organic photodiode

Publications (2)

Publication Number Publication Date
JP2015529793A JP2015529793A (ja) 2015-10-08
JP2015529793A5 true JP2015529793A5 (enExample) 2016-07-28

Family

ID=48914386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015517891A Withdrawn JP2015529793A (ja) 2012-06-20 2013-06-13 有機フォトダイオードを有する放射線検出器

Country Status (7)

Country Link
US (1) US20150137088A1 (enExample)
EP (1) EP2864813A1 (enExample)
JP (1) JP2015529793A (enExample)
CN (1) CN104412128A (enExample)
BR (1) BR112014031574A2 (enExample)
RU (1) RU2015101436A (enExample)
WO (1) WO2013190434A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160111473A1 (en) * 2014-10-17 2016-04-21 General Electric Company Organic photodiodes, organic x-ray detectors and x-ray systems
US20160148980A1 (en) * 2014-11-21 2016-05-26 General Electric Company Organic x-ray detectors and related systems
US10890669B2 (en) * 2015-01-14 2021-01-12 General Electric Company Flexible X-ray detector and methods for fabricating the same
US10539682B2 (en) 2015-02-17 2020-01-21 Koninklijke Philips N.V. Medical imaging detector
WO2017067846A1 (en) * 2015-10-21 2017-04-27 Koninklijke Philips N.V. Radiation detector for combined detection of low-energy radiation quanta and high-energy radiation quanta
FR3046300B1 (fr) * 2015-12-23 2018-07-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique organique, matrice de tels dispositifs et procede de fabrication de telles matrices.
EP3206235B1 (en) 2016-02-12 2021-04-28 Nokia Technologies Oy Method of forming an apparatus comprising a two dimensional material
WO2018202465A1 (en) * 2017-05-01 2018-11-08 Koninklijke Philips N.V. Multi-layer radiation detector
DE102017209498A1 (de) 2017-06-06 2018-12-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Sensorbauelement und Verfahren zum Herstellen desselben
US10608041B2 (en) * 2018-04-12 2020-03-31 Palo Alto Research Center Incorporated Bendable x-ray detector with TFT backplane in the neutral plane
CN109585477B (zh) * 2018-10-31 2021-03-19 奕瑞影像科技（太仓）有限公司 平板探测器结构及其制备方法
US10825855B2 (en) 2018-12-13 2020-11-03 Palo Alto Research Center Incorporated Flexible x-ray sensor with integrated strain sensor
CN111312902A (zh) * 2020-02-27 2020-06-19 上海奕瑞光电子科技股份有限公司 平板探测器结构及其制备方法
CN111244287A (zh) * 2020-03-17 2020-06-05 上海奕瑞光电子科技股份有限公司 有机光电二极管、x射线探测器及其制备方法
CN115000109B (zh) * 2022-06-08 2025-03-14 京东方科技集团股份有限公司 射线探测器及射线探测设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1051762A1 (en) * 1998-02-02 2000-11-15 Uniax Corporation X-y addressable electric microswitch arrays and sensor matrices employing them
US7078702B2 (en) * 2002-07-25 2006-07-18 General Electric Company Imager
US7745798B2 (en) * 2005-11-15 2010-06-29 Fujifilm Corporation Dual-phosphor flat panel radiation detector
US20070152290A1 (en) * 2005-12-30 2007-07-05 Lexmark International, Inc Thin film light-activated power switches, photovoltaic devices and methods for making micro-fluid ejected electronic devices
US7956332B2 (en) * 2008-10-29 2011-06-07 General Electric Company Multi-layer radiation detector assembly
JP5448877B2 (ja) * 2010-01-25 2014-03-19 富士フイルム株式会社 放射線検出器
JP5604323B2 (ja) * 2011-01-31 2014-10-08 富士フイルム株式会社 放射線画像検出装置
US8581254B2 (en) * 2011-09-30 2013-11-12 General Electric Company Photodetector having improved quantum efficiency

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