EP2317557A3 - Radiographic imaging device and radiographic imaging system using the same - Google Patents

Radiographic imaging device and radiographic imaging system using the same Download PDF

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Publication number
EP2317557A3
EP2317557A3 EP10188879A EP10188879A EP2317557A3 EP 2317557 A3 EP2317557 A3 EP 2317557A3 EP 10188879 A EP10188879 A EP 10188879A EP 10188879 A EP10188879 A EP 10188879A EP 2317557 A3 EP2317557 A3 EP 2317557A3
Authority
EP
European Patent Office
Prior art keywords
radiographic imaging
photoelectric conversion
organic photoelectric
layer
conversion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP10188879A
Other languages
German (de)
French (fr)
Other versions
EP2317557B1 (en
EP2317557A2 (en
Inventor
Shinji Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of EP2317557A2 publication Critical patent/EP2317557A2/en
Publication of EP2317557A3 publication Critical patent/EP2317557A3/en
Application granted granted Critical
Publication of EP2317557B1 publication Critical patent/EP2317557B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/36—Devices specially adapted for detecting X-ray radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene

Abstract

This invention provides a radiographic imaging device, having: a scintilator layer which converts transmitted radiation incident with emission of radiation to an imaging target to light; a first organic photoelectric conversion layer which is continuous and converts a first light containing the maximum peak wavelength from the scintilator layer to a charge; an insulating substrate having a storage capacitor and a thin film transistor for reading the charge generating in the first organic photoelectric conversion layer for each image detection pixel; a second organic photoelectric conversion layer which converts a second light from the scintilator layer to a charge; and a radiation dose detection circuit for reading the charge generating in the second organic photoelectric conversion layer for each radiation dose detection pixel and a radiographic imaging system using the same.
EP10188879.0A 2009-10-28 2010-10-26 Radiographic imaging device and radiographic imaging system using the same Active EP2317557B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009247736A JP5507202B2 (en) 2009-10-28 2009-10-28 Radiation imaging apparatus and radiation imaging system using the same

Publications (3)

Publication Number Publication Date
EP2317557A2 EP2317557A2 (en) 2011-05-04
EP2317557A3 true EP2317557A3 (en) 2013-01-09
EP2317557B1 EP2317557B1 (en) 2014-03-12

Family

ID=43706334

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10188879.0A Active EP2317557B1 (en) 2009-10-28 2010-10-26 Radiographic imaging device and radiographic imaging system using the same

Country Status (3)

Country Link
US (1) US8461545B2 (en)
EP (1) EP2317557B1 (en)
JP (1) JP5507202B2 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9190522B2 (en) * 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
WO2011122364A1 (en) 2010-04-02 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101977152B1 (en) 2010-04-02 2019-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9147768B2 (en) 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
US9196739B2 (en) 2010-04-02 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film and metal oxide film
WO2012014538A1 (en) * 2010-07-26 2012-02-02 富士フイルム株式会社 Radiation detector panel
TWI461725B (en) * 2011-08-02 2014-11-21 Vieworks Co Ltd Radiation imaging system
TWI636771B (en) * 2012-05-29 2018-10-01 鄭孝胥 Human tissue radiation protector and auxiliary method of radiation therapy
US8872120B2 (en) 2012-08-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and method for driving the same
DE102013217278B4 (en) 2012-09-12 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. A photodetector circuit, an imaging device, and a method of driving a photodetector circuit
TWI677989B (en) 2013-09-19 2019-11-21 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US9786856B2 (en) * 2015-08-20 2017-10-10 Dpix, Llc Method of manufacturing an image sensor device
EP3362820B1 (en) * 2015-11-11 2022-03-16 Siemens Healthcare GmbH Detector element for detecting incident x-ray radiation
US20170179199A1 (en) * 2015-12-18 2017-06-22 Dpix, Llc Method of screen printing in manufacturing an image sensor device
JP7140469B2 (en) * 2016-07-15 2022-09-21 キヤノン株式会社 Photoelectric conversion device and imaging system
US10367113B2 (en) * 2016-07-15 2019-07-30 Canon Kabushiki Kaisha Photoelectric conversion device, imaging element, and imaging device
US10575806B2 (en) 2018-03-22 2020-03-03 International Business Machines Corporation Charge amplifiers that can be implemented in thin film and are useful for imaging systems such as digital breast tomosynthesis with reduced X-ray exposure
CN208422918U (en) * 2018-08-01 2019-01-22 北京京东方光电科技有限公司 photoelectric conversion array substrate and photoelectric conversion device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070075252A1 (en) * 2005-09-30 2007-04-05 Fuji Photo Film Co., Ltd. Resolution-variable X-ray imaging device and X-ray CT apparatus
US20070187610A1 (en) * 2002-08-09 2007-08-16 Canon Kabushiki Kaisha Imaging method and apparatus with exposure control
US20090026379A1 (en) * 2007-07-26 2009-01-29 Hiroyuki Yaegashi Radiation imaging device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01173693U (en) * 1988-05-27 1989-12-08
JP3486490B2 (en) * 1995-09-04 2004-01-13 キヤノン株式会社 Radiation detector
US5949848A (en) * 1996-07-19 1999-09-07 Varian Assocaites, Inc. X-ray imaging apparatus and method using a flat amorphous silicon imaging panel
US5751783A (en) * 1996-12-20 1998-05-12 General Electric Company Detector for automatic exposure control on an x-ray imaging system
IL123006A (en) * 1998-01-20 2005-12-18 Edge Medical Devices Ltd X-ray imaging system
DE69929027T2 (en) * 1998-12-28 2006-08-24 Kabushiki Kaisha Toshiba, Kawasaki Radiation detector device
DE10015264C2 (en) * 2000-03-28 2002-06-13 Siemens Ag X-ray diagnostic device with an X-ray image converter with a combined rear light dose measuring unit
JP2003021683A (en) * 2001-07-06 2003-01-24 Canon Inc Radiation image pickup device
JP2004097465A (en) 2002-09-09 2004-04-02 Canon Inc Radiation image pickup apparatus
US6881492B2 (en) * 2002-09-27 2005-04-19 Eastman Kodak Company Primer composition for polyesters
JP2005147958A (en) * 2003-11-18 2005-06-09 Canon Inc Radiation detection instrument and radiation detection system
JP2005250351A (en) * 2004-03-08 2005-09-15 Konica Minolta Medical & Graphic Inc Radiation image detector and residual charge eliminating method for radiation image detector
JP5489423B2 (en) * 2007-09-21 2014-05-14 富士フイルム株式会社 Radiation imaging device
US7816651B2 (en) * 2007-09-27 2010-10-19 Varian Medical Systems, Inc. High detective quantum efficiency X-ray detectors
JP5155696B2 (en) * 2008-03-05 2013-03-06 富士フイルム株式会社 Image sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070187610A1 (en) * 2002-08-09 2007-08-16 Canon Kabushiki Kaisha Imaging method and apparatus with exposure control
US20070075252A1 (en) * 2005-09-30 2007-04-05 Fuji Photo Film Co., Ltd. Resolution-variable X-ray imaging device and X-ray CT apparatus
US20090026379A1 (en) * 2007-07-26 2009-01-29 Hiroyuki Yaegashi Radiation imaging device

Also Published As

Publication number Publication date
EP2317557B1 (en) 2014-03-12
US8461545B2 (en) 2013-06-11
JP5507202B2 (en) 2014-05-28
JP2011095042A (en) 2011-05-12
US20110095195A1 (en) 2011-04-28
EP2317557A2 (en) 2011-05-04

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