JP2015529793A - 有機フォトダイオードを有する放射線検出器 - Google Patents
有機フォトダイオードを有する放射線検出器 Download PDFInfo
- Publication number
- JP2015529793A JP2015529793A JP2015517891A JP2015517891A JP2015529793A JP 2015529793 A JP2015529793 A JP 2015529793A JP 2015517891 A JP2015517891 A JP 2015517891A JP 2015517891 A JP2015517891 A JP 2015517891A JP 2015529793 A JP2015529793 A JP 2015529793A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film transistor
- substrate
- radiation detector
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 53
- 239000011521 glass Substances 0.000 claims abstract description 33
- 239000011888 foil Substances 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 17
- 238000007689 inspection Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000003384 imaging method Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 7
- 238000005538 encapsulation Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 97
- 239000000463 material Substances 0.000 description 17
- 239000012790 adhesive layer Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229920000144 PEDOT:PSS Polymers 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000013170 computed tomography imaging Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000005300 metallic glass Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000002591 computed tomography Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002526 effect on cardiovascular system Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000009607 mammography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 238000002601 radiography Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20182—Modular detectors, e.g. tiled scintillators or tiled photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/36—Devices specially adapted for detecting X-ray radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Apparatus For Radiation Diagnosis (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261661889P | 2012-06-20 | 2012-06-20 | |
| US61/661,889 | 2012-06-20 | ||
| PCT/IB2013/054845 WO2013190434A1 (en) | 2012-06-20 | 2013-06-13 | Radiation detector with an organic photodiode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015529793A true JP2015529793A (ja) | 2015-10-08 |
| JP2015529793A5 JP2015529793A5 (enExample) | 2016-07-28 |
Family
ID=48914386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015517891A Withdrawn JP2015529793A (ja) | 2012-06-20 | 2013-06-13 | 有機フォトダイオードを有する放射線検出器 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20150137088A1 (enExample) |
| EP (1) | EP2864813A1 (enExample) |
| JP (1) | JP2015529793A (enExample) |
| CN (1) | CN104412128A (enExample) |
| BR (1) | BR112014031574A2 (enExample) |
| RU (1) | RU2015101436A (enExample) |
| WO (1) | WO2013190434A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018537658A (ja) * | 2015-10-21 | 2018-12-20 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | 低エネルギー放射線量子及び高エネルギー放射線量子の組み合わされた検出のための放射線検出器 |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160111473A1 (en) * | 2014-10-17 | 2016-04-21 | General Electric Company | Organic photodiodes, organic x-ray detectors and x-ray systems |
| US20160148980A1 (en) * | 2014-11-21 | 2016-05-26 | General Electric Company | Organic x-ray detectors and related systems |
| US10890669B2 (en) * | 2015-01-14 | 2021-01-12 | General Electric Company | Flexible X-ray detector and methods for fabricating the same |
| EP3259616A1 (en) | 2015-02-17 | 2017-12-27 | Koninklijke Philips N.V. | Medical imaging detector |
| FR3046300B1 (fr) * | 2015-12-23 | 2018-07-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique organique, matrice de tels dispositifs et procede de fabrication de telles matrices. |
| EP3206235B1 (en) | 2016-02-12 | 2021-04-28 | Nokia Technologies Oy | Method of forming an apparatus comprising a two dimensional material |
| CN110582708A (zh) * | 2017-05-01 | 2019-12-17 | 皇家飞利浦有限公司 | 多层辐射探测器 |
| DE102017209498A1 (de) | 2017-06-06 | 2018-12-06 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Sensorbauelement und Verfahren zum Herstellen desselben |
| US10608041B2 (en) * | 2018-04-12 | 2020-03-31 | Palo Alto Research Center Incorporated | Bendable x-ray detector with TFT backplane in the neutral plane |
| CN109585477B (zh) * | 2018-10-31 | 2021-03-19 | 奕瑞影像科技（太仓）有限公司 | 平板探测器结构及其制备方法 |
| US10825855B2 (en) | 2018-12-13 | 2020-11-03 | Palo Alto Research Center Incorporated | Flexible x-ray sensor with integrated strain sensor |
| CN111312902A (zh) * | 2020-02-27 | 2020-06-19 | 上海奕瑞光电子科技股份有限公司 | 平板探测器结构及其制备方法 |
| CN111244287A (zh) * | 2020-03-17 | 2020-06-05 | 上海奕瑞光电子科技股份有限公司 | 有机光电二极管、x射线探测器及其制备方法 |
| CN115000109B (zh) * | 2022-06-08 | 2025-03-14 | 京东方科技集团股份有限公司 | 射线探测器及射线探测设备 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999039394A1 (en) * | 1998-02-02 | 1999-08-05 | Uniax Corporation | X-y addressable electric microswitch arrays and sensor matrices employing them |
| US7078702B2 (en) * | 2002-07-25 | 2006-07-18 | General Electric Company | Imager |
| US7745798B2 (en) * | 2005-11-15 | 2010-06-29 | Fujifilm Corporation | Dual-phosphor flat panel radiation detector |
| US20070152290A1 (en) * | 2005-12-30 | 2007-07-05 | Lexmark International, Inc | Thin film light-activated power switches, photovoltaic devices and methods for making micro-fluid ejected electronic devices |
| US7956332B2 (en) * | 2008-10-29 | 2011-06-07 | General Electric Company | Multi-layer radiation detector assembly |
| JP5448877B2 (ja) * | 2010-01-25 | 2014-03-19 | 富士フイルム株式会社 | 放射線検出器 |
| JP5604323B2 (ja) * | 2011-01-31 | 2014-10-08 | 富士フイルム株式会社 | 放射線画像検出装置 |
| US8581254B2 (en) * | 2011-09-30 | 2013-11-12 | General Electric Company | Photodetector having improved quantum efficiency |
-
2013
- 2013-06-13 RU RU2015101436A patent/RU2015101436A/ru not_active Application Discontinuation
- 2013-06-13 JP JP2015517891A patent/JP2015529793A/ja not_active Withdrawn
- 2013-06-13 WO PCT/IB2013/054845 patent/WO2013190434A1/en not_active Ceased
- 2013-06-13 EP EP13744832.0A patent/EP2864813A1/en not_active Withdrawn
- 2013-06-13 BR BR112014031574A patent/BR112014031574A2/pt not_active Application Discontinuation
- 2013-06-13 US US14/402,729 patent/US20150137088A1/en not_active Abandoned
- 2013-06-13 CN CN201380032506.4A patent/CN104412128A/zh active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018537658A (ja) * | 2015-10-21 | 2018-12-20 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | 低エネルギー放射線量子及び高エネルギー放射線量子の組み合わされた検出のための放射線検出器 |
Also Published As
| Publication number | Publication date |
|---|---|
| RU2015101436A (ru) | 2016-08-10 |
| US20150137088A1 (en) | 2015-05-21 |
| WO2013190434A1 (en) | 2013-12-27 |
| EP2864813A1 (en) | 2015-04-29 |
| BR112014031574A2 (pt) | 2017-06-27 |
| CN104412128A (zh) | 2015-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2015529793A (ja) | 有機フォトダイオードを有する放射線検出器 | |
| US8581254B2 (en) | Photodetector having improved quantum efficiency | |
| CN107430202B (zh) | 柔性x射线检测器及其制造方法 | |
| US7956332B2 (en) | Multi-layer radiation detector assembly | |
| US8084745B2 (en) | Radiation imaging apparatus and radiation imaging system | |
| JP5448877B2 (ja) | 放射線検出器 | |
| van Breemen et al. | Curved digital X-ray detectors | |
| US8680459B2 (en) | Maintenance method of radiological image detection apparatus | |
| US8704184B2 (en) | Radiological image detection apparatus and method of manufacturing the same | |
| US20130048861A1 (en) | Radiation detector, radiation detector fabrication method, and radiographic image capture device | |
| JP2010056396A (ja) | Ｘ線検出素子 | |
| CN112673285B (zh) | 多片式单层辐射探测器 | |
| US10571580B2 (en) | Detector element for detecting incident x-ray radiation | |
| CN106062956A (zh) | 制造光二极管检测器的方法 | |
| US20130048862A1 (en) | Radiation detector, radiation detector fabrication method, and radiographic image capture device | |
| JP2012177623A (ja) | 放射線画像検出装置、及び放射線画像検出装置の製造方法 | |
| US20040113088A1 (en) | X-ray detector including a scintillator with a photosensor coating, and a production process | |
| KR101653440B1 (ko) | 동일 평면 상의 전극 구조 기반 x선 영상 검출용 유기 소자 및 그 제조 방법 | |
| JP2002168955A (ja) | 放射線検出装置及びその製造方法並びに放射線撮像システム | |
| JP2011176274A (ja) | 放射線検出素子 | |
| JP2014122903A (ja) | 放射線検出器および放射線画像撮影装置 | |
| Tedde et al. | Imaging with organic and hybrid photodetectors | |
| JPWO2008155973A1 (ja) | 光電変換素子、光電変換素子の製造方法、イメージセンサおよび放射線画像検出器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160610 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160610 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20160704 |