JP2015529017A5 - - Google Patents
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- Publication number
- JP2015529017A5 JP2015529017A5 JP2015524304A JP2015524304A JP2015529017A5 JP 2015529017 A5 JP2015529017 A5 JP 2015529017A5 JP 2015524304 A JP2015524304 A JP 2015524304A JP 2015524304 A JP2015524304 A JP 2015524304A JP 2015529017 A5 JP2015529017 A5 JP 2015529017A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- etching
- depositing
- groove
- upper portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 31
- 238000005530 etching Methods 0.000 claims 12
- 238000000151 deposition Methods 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000004020 conductor Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 239000011241 protective layer Substances 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/558,218 US8765609B2 (en) | 2012-07-25 | 2012-07-25 | Deposit/etch for tapered oxide |
US13/558,218 | 2012-07-25 | ||
US13/572,492 | 2012-08-10 | ||
US13/572,492 US20140045318A1 (en) | 2012-08-10 | 2012-08-10 | Forming a tapered oxide from a thick oxide layer |
PCT/US2013/050046 WO2014018273A1 (en) | 2012-07-25 | 2013-07-11 | Method of forming a tapered oxide |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015529017A JP2015529017A (ja) | 2015-10-01 |
JP2015529017A5 true JP2015529017A5 (pt) | 2016-08-25 |
JP6185062B2 JP6185062B2 (ja) | 2017-08-23 |
Family
ID=48877540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015524304A Expired - Fee Related JP6185062B2 (ja) | 2012-07-25 | 2013-07-11 | テーパ付けされた酸化物の堆積/エッチング |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6185062B2 (pt) |
KR (1) | KR101955321B1 (pt) |
CN (1) | CN104488084B (pt) |
WO (1) | WO2014018273A1 (pt) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014102029A1 (de) * | 2014-02-18 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement |
JP6203697B2 (ja) * | 2014-09-30 | 2017-09-27 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP6842616B2 (ja) * | 2015-09-24 | 2021-03-17 | 東京エレクトロン株式会社 | 凹部フィーチャ内での膜のボトムアップ式付着のための方法 |
JP6709425B2 (ja) * | 2016-05-31 | 2020-06-17 | 北九州市 | 半導体装置 |
CN105931969A (zh) * | 2016-05-31 | 2016-09-07 | 上海华虹宏力半导体制造有限公司 | 终端结构的制造方法 |
JP6767302B2 (ja) * | 2017-04-14 | 2020-10-14 | 東京エレクトロン株式会社 | 成膜方法 |
DE102018107417B4 (de) * | 2018-03-28 | 2024-02-08 | Infineon Technologies Austria Ag | Nadelzellengraben-MOSFET und Verfahren zur Herstellung desselben |
JP7337767B2 (ja) | 2020-09-18 | 2023-09-04 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP7492438B2 (ja) * | 2020-11-02 | 2024-05-29 | 株式会社東芝 | 半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6191447B1 (en) * | 1999-05-28 | 2001-02-20 | Micro-Ohm Corporation | Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same |
JP4073176B2 (ja) * | 2001-04-02 | 2008-04-09 | 新電元工業株式会社 | 半導体装置およびその製造方法 |
DE102005043916B3 (de) * | 2005-09-14 | 2006-12-21 | Infineon Technologies Austria Ag | Leistungshalbleiterbauelement mit einer Feldelektrode und Verfahren zu dessen Herstellung |
US7964912B2 (en) | 2008-09-18 | 2011-06-21 | Power Integrations, Inc. | High-voltage vertical transistor with a varied width silicon pillar |
US20100264486A1 (en) * | 2009-04-20 | 2010-10-21 | Texas Instruments Incorporated | Field plate trench mosfet transistor with graded dielectric liner thickness |
KR101094373B1 (ko) * | 2009-07-03 | 2011-12-15 | 주식회사 하이닉스반도체 | 랜딩플러그 전치 구조를 이용한 매립게이트 제조 방법 |
JP5323610B2 (ja) | 2009-08-18 | 2013-10-23 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置とその製造方法 |
-
2013
- 2013-07-11 CN CN201380039425.7A patent/CN104488084B/zh not_active Expired - Fee Related
- 2013-07-11 WO PCT/US2013/050046 patent/WO2014018273A1/en active Application Filing
- 2013-07-11 JP JP2015524304A patent/JP6185062B2/ja not_active Expired - Fee Related
- 2013-07-11 KR KR1020157001995A patent/KR101955321B1/ko active IP Right Grant
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