JP2015516679A - 非揮発性電荷トラップメモリ装置及びロジックcmos装置の統合 - Google Patents
非揮発性電荷トラップメモリ装置及びロジックcmos装置の統合 Download PDFInfo
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- JP2015516679A JP2015516679A JP2015503361A JP2015503361A JP2015516679A JP 2015516679 A JP2015516679 A JP 2015516679A JP 2015503361 A JP2015503361 A JP 2015503361A JP 2015503361 A JP2015503361 A JP 2015503361A JP 2015516679 A JP2015516679 A JP 2015516679A
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
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- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
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- H—ELECTRICITY
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
Description
本願は、2008年8月4日に出願された同時係属中の米国特許出願第12/185,751号の一部継続出願であり、これ自体は2008年5月22日に出願された米国特許出願第12/125,864号(現米国特許第8,093,128号、発行日:2012年1月10日)の継続出願であり、これ自体は2007年5月25日に出願された米国仮特許出願第60/940,148号及び2007年5月25日に出願された米国仮特許出願第60/940,137号についての35 U.S.C. 119(e)による優先権の利益を主張するものであり、これらは全て参照によって本願に組み込まれる。
別の観点においては、本願の開示はマルチゲート又はマルチゲート−表面メモリ装置に関係しており、基板の表面の上又は上方に形成されたチャネルの2以上の面上にある電荷トラッピング領域及びこれを作製する方法が含まれる。マルチゲート装置には、平面型及び非平面型の装置の両者が含まれる。平面マルチゲート装置(不図示)は、一般的にダブルゲート平面型装置を含み、これにおいては、幾つかの第1の層が堆積されて後に形成されるチャネルの下に第1のゲートが形成され、また、その上に幾つかの第2の層が堆積されて第2のゲートが形成される。非平面マルチゲート装置は、一般的に、基板の表面の上又は上方に形成されておりかつ3つ以上の側面においてゲートによって囲まれている水平又は垂直チャネルを含む。
Claims (20)
- 基板の第1の領域内に、前記基板の面の上の半導体物質からメモリ装置のチャネルを形成するステップであって、前記チャネルは前記メモリ装置のソースとドレインを接続する、ステップと、
前記チャネルの複数の面に隣り合うチャネルの上に電荷トラッピング誘電体スタックを形成するステップであって、前記電荷トラッピング誘電体スタックはトンネリング層上の電荷トラッピング層上にブロッキング層を含む、ステップと、
前記基板の第2の領域の上にMOS装置を形成するステップ
とを備える、方法。 - 前記MOS装置を形成するステップは、熱酸化を行って前記MOS装置のゲート誘電体層を形成するのと同時的に前記ブロッキング層を熱的に再酸化するステップを備える、請求項1に記載の方法。
- 窒化プロセスを行って前記ゲート誘電体層及び前記ブロッキング層を同時的に窒化するステップをさらに備える、請求項2に記載の方法。
- 前記電荷トラッピング誘電体スタックを形成するステップは、
犠牲的な誘電体層においてウェットエッチャントを用いてウィンドウを開けて前記基板の第1の領域を露出させるステップと、
前記ウィンドウ内に、前記トンネリング層上の前記電荷トラッピング層上の前記ブロッキング層を形成するステップと、
前記犠牲的な誘電体層をウェットエッチングするステップ
とをさらに備える、請求項1に記載の方法。 - 前記電荷トラッピング層は、トンネル酸化物寄りの窒化物を備える下側電荷トラッピング層と、前記下側電荷トラッピング層に比して相対的に酸素リーンで且つ複数の電荷トラッピング層に分布している複数の電荷トラップを備える上側電荷トラッピング層とを含む、複数の電荷トラッピング層を備える、請求項1に記載の方法。
- 前記基板の前記第2の領域の上にゲート誘電体層を形成するステップであって、前記ゲート誘電体層は高誘電率ゲート誘電体を備える、ステップをさらに備える、請求項5に記載の方法。
- 前記高誘電率ゲート誘電体の上にメタルゲート層を形成するステップをさらに備える、請求項6に記載の方法。
- 前記電荷トラッピング層は、前記上側電荷トラッピング層と前記下側電荷トラッピング層とを分離する中間酸化物層をさらに備え、前記ゲート誘電体層は高誘電率ゲート誘電体を備える、請求項5に記載の方法。
- 前記高誘電率ゲート誘電体の上にメタルゲート層を形成するステップをさらに備える、請求項8に記載の方法。
- 前記チャネルを形成するステップは、前記チャネルの長軸方向との関係で<100>の表面結晶方位を有するシリコンから前記チャネルを形成するステップを備える、請求項8に記載の方法。
- メモリ装置を基板の第1の領域の上に形成するステップであって、該ステップは:
少なくとも1つのゲート層によって分離された少なくとも2つの誘電体層を含む層スタックを前記基板の上に形成するステップと、
前記層スタックの最上面から少なくとも1つの前記誘電体層及び前記ゲート層を通って延長している第1の開口部を形成するステップと、
前記第1の開口部内の側壁に電荷トラッピング誘電体スタックを形成するステップと、
前記メモリ装置のチャネルを形成するステップであって、該ステップは前記第1の開口部内の前記電荷トラッピング誘電体スタックの上に半導体物質を堆積するステップを備える、ステップ
とを備える、ステップと、
前記基板の第2の領域の上にMOS装置を形成するステップであって、該ステップは前記層スタックの最上面から少なくとも1つの前記誘電体層及び前記ゲート層を通って延長している第2の開口部を形成するステップを備える、ステップ
とを備える、方法。 - 前記電荷トラッピング誘電体スタックを形成するステップは、前記第1の開口部内の前記側壁にブロッキング層を形成するステップと、前記ブロッキング層の上に電荷トラッピング層を形成するステップと、前記電荷トラッピング誘電体層の上にトンネリング層を形成するステップとを備える、請求項11に記載の方法。
- 前記MOS装置を形成するステップは、熱酸化を行って同時的に前記MOS装置のゲート誘電体層及び前記ブロッキング層を形成するステップを備える、請求項12に記載の方法。
- 窒化プロセスを行って前記ゲート誘電体層及び前記ブロッキング層を同時的に窒化するステップをさらに備える、請求項13に記載の方法。
- 前記電荷トラッピング層は、トンネル酸化物寄りの窒化物を備える下側電荷トラッピング層と、前記下側電荷トラッピング層に比して相対的に酸素リーンで且つ複数の電荷トラッピング層に分布している複数の電荷トラップを備える上側電荷トラッピング層とを含む、複数の電荷トラッピング層を備える、請求項13に記載の方法。
- 前記複数の電荷トラッピング層のジャンクションをアニーリングするステップをさらに備える、請求項15に記載の方法。
- 前記電荷トラッピング層は、前記上側電荷トラッピング層と前記下側電荷トラッピング層とを分離する中間酸化物層をさらに備え、前記ゲート誘電体層は高誘電率ゲート誘電体を備える、請求項15に記載の方法。
- 前記ゲート層は、メタルを備える、請求項17に記載の方法。
- メモリ装置を基板の第1の領域の上に形成するステップであって、該ステップは:
犠牲層の上にある少なくとも1つの誘電体層を含む層スタックを前記基板の上に形成するステップと、
前記層スタックの最上面から前記誘電体層及び前記犠牲層を通って延長している第1の開口部を形成するステップと、
前記第1の開口部内に前記メモリ装置のチャネルを形成するステップと、
前記最上面から前記誘電体層を通って延長している第2の開口部を形成して、また、前記チャネルに隣り合う犠牲層の少なくとも一部を除去して前記チャネルの少なくとも一部を露出させるステップと、
前記チャネルの露出されている部分の上に電荷トラッピング誘電体スタックを形成するステップと、
前記電荷トラッピング誘電体スタックの上にゲート層を形成するステップ
とを備える、ステップと、
前記基板の第2の領域の上にMOS装置を形成するステップ
とを備える、方法。 - 前記電荷トラッピング誘電体スタックを形成するステップは、前記チャネルの前記露出されている部分の上にトンネリング層を形成するステップと、前記トンネリング層の上に電荷トラッピング層を形成するステップと、前記電荷トラッピング誘電体層の上にブロッキング層を形成するステップとを備える、請求項19に記載の方法。
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EP2831919A4 (en) | 2016-03-23 |
KR102256421B1 (ko) | 2021-05-26 |
KR20150011792A (ko) | 2015-02-02 |
KR20200012038A (ko) | 2020-02-04 |
CN104350603B (zh) | 2017-09-15 |
EP2831919A1 (en) | 2015-02-04 |
JP6465791B2 (ja) | 2019-02-06 |
CN104350603A (zh) | 2015-02-11 |
WO2013148393A1 (en) | 2013-10-03 |
TW201347048A (zh) | 2013-11-16 |
KR102072181B1 (ko) | 2020-03-02 |
TWI582854B (zh) | 2017-05-11 |
EP3229276A1 (en) | 2017-10-11 |
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