JP2015513518A5 - - Google Patents

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JP2015513518A5
JP2015513518A5 JP2014560068A JP2014560068A JP2015513518A5 JP 2015513518 A5 JP2015513518 A5 JP 2015513518A5 JP 2014560068 A JP2014560068 A JP 2014560068A JP 2014560068 A JP2014560068 A JP 2014560068A JP 2015513518 A5 JP2015513518 A5 JP 2015513518A5
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layer
forming
porous silicon
silicon layer
gallium arsenide
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JP2014560068A
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Japanese (ja)
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JP2015513518A (ja
JP6199323B2 (ja
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Priority claimed from PCT/US2013/028468 external-priority patent/WO2013130914A1/en
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Publication of JP6199323B2 publication Critical patent/JP6199323B2/ja
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JP2014560068A 2012-02-29 2013-02-28 効率的化合物の半導体太陽電池のための構造及び方法 Expired - Fee Related JP6199323B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261605186P 2012-02-29 2012-02-29
US61/605,186 2012-02-29
PCT/US2013/028468 WO2013130914A1 (en) 2012-02-29 2013-02-28 Structures and methods for high efficiency compound semiconductor solar cells

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JP2015513518A JP2015513518A (ja) 2015-05-14
JP2015513518A5 true JP2015513518A5 (enExample) 2016-04-21
JP6199323B2 JP6199323B2 (ja) 2017-09-20

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JP2014560068A Expired - Fee Related JP6199323B2 (ja) 2012-02-29 2013-02-28 効率的化合物の半導体太陽電池のための構造及び方法

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US (1) US20130337601A1 (enExample)
JP (1) JP6199323B2 (enExample)
KR (1) KR20140138817A (enExample)
AU (1) AU2013225860B2 (enExample)
WO (1) WO2013130914A1 (enExample)

Families Citing this family (195)

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